component
FDD6680AS
Public Made by Adomby adom
UMW MOSFETs, TO-252. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.
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FDD6680AS
UMW · MOSFETs · TO-252
FDD6680AS from UMW, in a TO-252. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.
Pinout
| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | G | input | GATE terminal of the 30V N-channel MOSFET; the gate-source voltage is rated at ±20 V (VGSS). |
| 2 | D | passive | DRAIN terminal; the datasheet names the solder mounting surface of the drain pins as the thermal reference for RθJC (Note 1, page 4). |
| 3 | S | passive | SOURCE terminal of the MOSFET, the return path for the drain current. |
Key specifications
| Parameter | Value |
|---|---|
| Manufacturer | UMW |
| Package | TO-252 |
| Category | Transistors/Thyristors |
| Pins | 3 |
Electrical characteristics
Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).
| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Drain-Source Voltage | VDSS | 30 | V | 1 | |||
| Gate-Source Voltage | VGSS | -20 | 20 | V | 1 | ||
| Drain Current - Continuous | ID | 55 | A | Note 3 | 1 | ||
| Drain Current - Pulsed | ID | 100 | A | Note 1a | 1 | ||
| Power Dissipation for Single Operation | PD | 60 | W | Note 1 | 1 | ||
| Power Dissipation for Single Operation | PD | 3.1 | W | Note 1a | 1 | ||
| Power Dissipation for Single Operation | PD | 1.3 | W | Note 1b | 1 | ||
| Operating and Storage Junction Temperature Range | TJ, TSTG | -55 | 150 | °C | 1 | ||
| Drain-Source Breakdown Voltage | BVDSS | 30 | V | VGS=0V, ID=1mA | 3 | ||
| Gate-Body Leakage | IGSS | -100 | 100 | nA | VGS=±20V, VDS=0V | 3 | |
| Gate Threshold Voltage | VGS(th) | 1 | 3 | V | VDS=VGS, ID=1mA | 3 | |
| Static Drain-Source On-Resistance | RDS(ON) | 8.6 | 10.5 | mΩ | VGS=10V, ID=12.5A | 3 | |
| Static Drain-Source On-Resistance | RDS(ON) | 10.3 | 13 | mΩ | VGS=4.5V, ID=10A | 3 | |
| On-State Drain Current | ID(ON) | 50 | A | VGS=10V, VDS=5V | 3 | ||
| Maximum Continuous Drain-Source Diode Forward Current | IS | 4.4 | A | 4 | |||
| Drain-Source Avalanche Energy | WDSS | 205 | mJ | Single Pulse, VDD=15V, ID=13.5A | 3 | ||
| Breakdown Voltage Temperature Coefficient | ΔBVDSS/ΔTJ | 29 | mV/°C | ID=1mA, Referenced to 25°C | 3 | ||
| Gate Threshold Voltage Temperature Coefficient | ΔVGS(th)/ΔTJ | -3 | mV/°C | ID=1mA, Referenced to 25°C | 3 | ||
| Forward Transconductance | gFS | 45 | S | VDS=15V, ID=12.5A | 3 | ||
| Thermal Resistance, Junction-to-Case | RθJC | 2.1 | °C/W | Note 1 | 2 | ||
| Thermal Resistance, Junction-to-Ambient | RθJA | 40 | °C/W | Note 1a, 1 in² pad of 2oz copper | 2 | ||
| Thermal Resistance, Junction-to-Ambient | RθJA | 96 | °C/W | Note 1b, minimum pad | 2 |
CAD (KiCad official)
- Symbol:
FDD6680AS - Footprint:
Package_TO_SOT_SMD:TO-252-2 - 3D model: TO-252 (KiCad packages3D, STEP)
- 3D model files:
fdd6680as-etched.step/fdd6680as-etched.glbcarry the MPN laser-etched on the die in a toggleableAdom.LaserEtchgroup (Fusion-ready);fdd6680as.step/fdd6680as.glbare the bare package body.
Provenance
Data extracted from the manufacturer datasheet, not a distributor listing:
- Datasheet: UMW datasheet (10 pp, sha256
b1641386527b5110, retrieved 2026-10-18, tier: lcsc) - Extractor: parts-factory
2.0.0/extract_pins 0.3, primaryclaude-haiku-5-5(text), consensusclaude-sonnet-5-5(agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish. - CAD: KiCad official libraries (CC-BY-SA 4.0).
# FDD6680AS
**UMW** · MOSFETs · TO-252
FDD6680AS from UMW, in a TO-252. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.
## Pinout
| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | G | input | GATE terminal of the 30V N-channel MOSFET; the gate-source voltage is rated at ±20 V (VGSS). |
| 2 | D | passive | DRAIN terminal; the datasheet names the solder mounting surface of the drain pins as the thermal reference for RθJC (Note 1, page 4). |
| 3 | S | passive | SOURCE terminal of the MOSFET, the return path for the drain current. |
## Key specifications
| Parameter | Value |
|---|---|
| Manufacturer | UMW |
| Package | TO-252 |
| Category | Transistors/Thyristors |
| Pins | 3 |
## Electrical characteristics
Limits as printed in the datasheet (page.json `metadata.characteristics` carries them as data).
| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Drain-Source Voltage | VDSS | | | 30 | V | | 1 |
| Gate-Source Voltage | VGSS | -20 | | 20 | V | | 1 |
| Drain Current - Continuous | ID | | | 55 | A | Note 3 | 1 |
| Drain Current - Pulsed | ID | | | 100 | A | Note 1a | 1 |
| Power Dissipation for Single Operation | PD | | | 60 | W | Note 1 | 1 |
| Power Dissipation for Single Operation | PD | | | 3.1 | W | Note 1a | 1 |
| Power Dissipation for Single Operation | PD | | | 1.3 | W | Note 1b | 1 |
| Operating and Storage Junction Temperature Range | TJ, TSTG | -55 | | 150 | °C | | 1 |
| Drain-Source Breakdown Voltage | BVDSS | 30 | | | V | VGS=0V, ID=1mA | 3 |
| Gate-Body Leakage | IGSS | -100 | | 100 | nA | VGS=±20V, VDS=0V | 3 |
| Gate Threshold Voltage | VGS(th) | 1 | | 3 | V | VDS=VGS, ID=1mA | 3 |
| Static Drain-Source On-Resistance | RDS(ON) | | 8.6 | 10.5 | mΩ | VGS=10V, ID=12.5A | 3 |
| Static Drain-Source On-Resistance | RDS(ON) | | 10.3 | 13 | mΩ | VGS=4.5V, ID=10A | 3 |
| On-State Drain Current | ID(ON) | 50 | | | A | VGS=10V, VDS=5V | 3 |
| Maximum Continuous Drain-Source Diode Forward Current | IS | | | 4.4 | A | | 4 |
| Drain-Source Avalanche Energy | WDSS | | 205 | | mJ | Single Pulse, VDD=15V, ID=13.5A | 3 |
| Breakdown Voltage Temperature Coefficient | ΔBVDSS/ΔTJ | | 29 | | mV/°C | ID=1mA, Referenced to 25°C | 3 |
| Gate Threshold Voltage Temperature Coefficient | ΔVGS(th)/ΔTJ | | -3 | | mV/°C | ID=1mA, Referenced to 25°C | 3 |
| Forward Transconductance | gFS | | 45 | | S | VDS=15V, ID=12.5A | 3 |
| Thermal Resistance, Junction-to-Case | RθJC | | 2.1 | | °C/W | Note 1 | 2 |
| Thermal Resistance, Junction-to-Ambient | RθJA | | 40 | | °C/W | Note 1a, 1 in² pad of 2oz copper | 2 |
| Thermal Resistance, Junction-to-Ambient | RθJA | | 96 | | °C/W | Note 1b, minimum pad | 2 |
## CAD (KiCad official)
- Symbol: `FDD6680AS`
- Footprint: `Package_TO_SOT_SMD:TO-252-2`
- 3D model: TO-252 (KiCad packages3D, STEP)
- 3D model files: `fdd6680as-etched.step` / `fdd6680as-etched.glb` carry the MPN laser-etched on the die in a toggleable `Adom.LaserEtch` group (Fusion-ready); `fdd6680as.step` / `fdd6680as.glb` are the bare package body.
## Provenance
Data extracted from the manufacturer datasheet, not a distributor listing:
- **Datasheet:** [UMW datasheet](https://jlcpcb.com/api/file/downloadByFileSystemAccessId/8755876038339907584) (10 pp, sha256 `b1641386527b5110`, retrieved 2026-10-18, tier: lcsc)
- **Extractor:** parts-factory `2.0.0` / `extract_pins 0.3`, primary `claude-haiku-5-5` (text), consensus `claude-sonnet-5-5` (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
- **CAD:** KiCad official libraries (CC-BY-SA 4.0).
[Datasheet PDF](docs/fdd6680as-datasheet.pdf)