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FDD6670A-NL

Public Made by Adom

by adom

JSMSEMI MOSFETs, TO-252. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.

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FDD6670A-NL

JSMSEMI · MOSFETs · TO-252

FDD6670A-NL from JSMSEMI, in a TO-252. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

Pinout

Pin Name Type Function
1 G input Gate of the N-channel MOSFET, with gate-source voltage rated at ±20 V and threshold VGS(th) of 1 V min to 2.5 V max at ID=250μA.
2 D passive Drain, also the exposed tab, with drain-source voltage rated at 30 V and continuous drain current of 80 A at TC=25℃.
3 S passive Source of the N-channel MOSFET, with continuous source (body diode) current of 80 A and pulsed source current of 280 A.

Key specifications

Parameter Value
Manufacturer JSMSEMI
Package TO-252
Category Transistors/Thyristors
Pins 3

Electrical characteristics

Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).

Parameter Symbol Min Typ Max Unit Conditions Page
Drain-Source Voltage VDS 30 V TC=25℃ 1
Gate-Source Voltage VGS -20 20 V TC=25℃ 1
Continuous Drain Current ID 80 A TC=25℃ 1
Continuous Drain Current ID 46 A TC=100℃ 1
Pulsed Drain Current IDM 280 A TC=25℃ 1
Single Pulse Avalanche Energy EAS 56 mJ TJ=25℃,VDD=15V,VG=10V, RG=25Ω, L=0.5mH, IAS=15A 1
Power Dissipation PD 46 W TC=25℃ 1
Operating and Storage Junction Temperature Range TJ, TSTG -55 150 ℃ 1
Thermal Resistance, Junction to Case RƟJC 2.72 ℃/W 1
Drain-Source Breakdown Voltage BVDSS 30 V VGS=0V,ID=250μA 2
Zero Gate Voltage Drain Current IDSS 1 μA VGS=0V, VDS=30V 2
Gate-Source Leakage Current IGSS -100 100 nA VGS=±20V, VDS=0A 2
Gate-Source Threshold Voltage VGS(th) 1 1.5 2.5 V VGS=VDS, ID=250μA 2
Drain-Source On Resistance RDS(ON) 4.2 5.5 mΩ VGS=10V,ID=30A 2
Drain-Source On Resistance RDS(ON) 7.5 12 mΩ VGS=4.5V,ID=20A 2
Source-Drain Diode Forward Voltage VSD 1.2 V VGS=0V,IS=30A 2
Continuous Source Current Is 80 A 2
Pulsed Source Current Ism 280 A 2
Input Capacitance Ciss 1614 pF VDS=15V, VGS=0V, f=1MHz 2
Output Capacitance Coss 245 pF VDS=15V, VGS=0V, f=1MHz 2
Reverse Transfer Capacitance Crss 215 pF VDS=15V, VGS=0V, f=1MHz 2
Turn-On Delay Time td(on) 7.5 ns VDD=15V, ID=30A, VGS=10V,RGEN=3Ω 2
Rise Time tr 14.5 ns VDD=15V, ID=30A, VGS=10V,RGEN=3Ω 2
Turn-Off Delay Time td(off) 35.2 ns VDD=15V, ID=30A, VGS=10V,RGEN=3Ω 2
Fall Time tf 9.6 ns VDD=15V, ID=30A, VGS=10V,RGEN=3Ω 2
Total Gate Charge Qg 33.7 nC VGS=10V, VDS=15V, ID=30A 2
Gate-Source Charge Qgs 8.5 nC VGS=10V, VDS=15V, ID=30A 2
Gate-Drain Miller Charge Qgd 7.5 nC VGS=10V, VDS=15V, ID=30A 2

CAD (KiCad official)

  • Symbol: FDD6670A-NL
  • Footprint: Package_TO_SOT_SMD:TO-252-2
  • 3D model: TO-252 (KiCad packages3D, STEP)
  • 3D model files: fdd6670a-nl-etched.step / fdd6670a-nl-etched.glb carry the MPN laser-etched on the die in a toggleable Adom.LaserEtch group (Fusion-ready); fdd6670a-nl.step / fdd6670a-nl.glb are the bare package body.

Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

  • Datasheet: JSMSEMI datasheet (5 pp, sha256 e497ea0a88e88502, retrieved 2026-10-23, tier: lcsc)
  • Extractor: parts-factory 2.0.0 / extract_pins 0.3, primary claude-sonnet-5-5 (text+vision), consensus claude-opus-5-5 (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
  • CAD: KiCad official libraries (CC-BY-SA 4.0).

Datasheet PDF