component
FDD6670A-HXY
Public Made by Adomby adom
HXY MOSFET MOSFETs, TO-252-2L. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.
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FDD6670A-HXY
HXY MOSFET · MOSFETs · TO-252-2L
FDD6670A-HXY from HXY MOSFET, in a TO-252-2L. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.
Pinout
| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | G | input | Gate pin of the N-channel MOSFET, with a gate-source voltage rating of ±20 V and operation with gate voltages as low as 4.5 V. |
| 2 | D | passive | Drain pin, rated for VDS of 30 V and continuous drain current of 80 A at TC=25℃ (also the tab of the TO-252-2L package). |
| 3 | S | passive | Source pin of the N-channel MOSFET, with continuous source current of 80 A (body diode) and pulsed source current of 320 A. |
Key specifications
| Parameter | Value |
|---|---|
| Manufacturer | HXY MOSFET |
| Package | TO-252-2L |
| Category | Triode/MOS Tube/Transistor |
| Pins | 3 |
Electrical characteristics
Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).
| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Drain-Source Voltage | VDS | 30 | V | TC=25℃ | 1 | ||
| Gate-Source Voltage | VGS | -20 | 20 | V | TC=25℃ | 1 | |
| Drain Current Continuous | ID | 80 | A | TC=25℃ | 1 | ||
| Drain Current Continuous | ID | 51 | A | TC=100℃ | 1 | ||
| Drain Current Pulsed | IDM | 320 | A | TC=25℃ | 1 | ||
| Single Pulse Avalanche Energy | EAS | 88 | mJ | TC=25℃ | 1 | ||
| Single Pulse Avalanche Current | IAS | 42 | A | TC=25℃ | 1 | ||
| Power Dissipation | PD | 54 | W | TC=25℃ | 1 | ||
| Power Dissipation Derate above 25℃ | PD | 0.43 | W/℃ | Derate above 25℃ | 1 | ||
| Storage Temperature Range | TSTG | -55 | 150 | ℃ | 1 | ||
| Operating Junction Temperature Range | TJ | -55 | 150 | ℃ | 1 | ||
| Thermal Resistance Junction to ambient | RθJA | 62 | ℃/W | 1 | |||
| Thermal Resistance Junction to Case | RθJC | 2.3 | ℃/W | 1 | |||
| Drain-Source Breakdown Voltage | BVDSS | 30 | V | VGS=0V , ID=250uA | 2 | ||
| Drain-Source Leakage Current | IDSS | 1 | uA | VDS=30V , VGS=0V , TJ=25℃ | 2 | ||
| Drain-Source Leakage Current | IDSS | 10 | uA | VDS=24V , VGS=0V , TJ=125℃ | 2 | ||
| Gate-Source Leakage Current | IGSS | -100 | 100 | nA | VGS=±20V , VDS=0V | 2 | |
| Static Drain-Source On-Resistance | RDS(ON) | 5 | 6.8 | mΩ | VGS=10V , ID=20A | 2 | |
| Static Drain-Source On-Resistance | RDS(ON) | 6.5 | 9 | mΩ | VGS=4.5V , ID=10A | 2 | |
| Gate Threshold Voltage | VGS(th) | 1 | 1.6 | 2.5 | V | VGS=VDS , ID =250uA | 2 |
| Single Pulse Avalanche Energy | EAS | 20 | mJ | VDD=25V, L=0.1mH, IAS=20A | 2 | ||
| Continuous Source Current | IS | 80 | A | VG=VD=0V , Force Current | 2 | ||
| Pulsed Source Current | ISM | 320 | A | VG=VD=0V , Force Current | 2 | ||
| Diode Forward Voltage | VSD | 1 | V | VGS=0V , IS=1A , TJ=25℃ | 2 | ||
| BVDSS Temperature Coefficient | △BVDSS/△TJ | 0.04 | V/℃ | Reference to 25℃ , ID=1mA | 2 | ||
| VGS(th) Temperature Coefficient | △VGS(th) | -4 | mV/℃ | 2 | |||
| Forward Transconductance | gfs | 18 | S | VDS=10V , ID=10A | 2 | ||
| Total Gate Charge | Qg | 11.1 | nC | VDS=15V , VGS=4.5V , ID=20A | 2 | ||
| Gate-Source Charge | Qgs | 1.85 | nC | VDS=15V , VGS=4.5V , ID=20A | 2 | ||
| Gate-Drain Charge | Qgd | 6.8 | nC | VDS=15V , VGS=4.5V , ID=20A | 2 | ||
| Turn-On Delay Time | Td(on) | 7.5 | ns | VDD=15V , VGS=10V , RG=3.3Ω , ID=15A | 2 | ||
| Rise Time | Tr | 14.5 | ns | VDD=15V , VGS=10V , RG=3.3Ω , ID=15A | 2 | ||
| Turn-Off Delay Time | Td(off) | 35.2 | ns | VDD=15V , VGS=10V , RG=3.3Ω , ID=15A | 2 | ||
| Fall Time | Tf | 9.6 | ns | VDD=15V , VGS=10V , RG=3.3Ω , ID=15A | 2 | ||
| Input Capacitance | Ciss | 1160 | pF | VDS=25V , VGS=0V , F=1MHz | 2 | ||
| Output Capacitance | Coss | 200 | pF | VGS=0V, VDS=0V, F=1MHz | 2 | ||
| Reverse Transfer Capacitance | Crss | 180 | pF | VGS=0V, VDS=0V, F=1MHz | 2 | ||
| Gate resistance | Rg | 2.5 | Ω | VGS=0V, VDS=0V, F=1MHz | 2 |
CAD (KiCad official)
- Symbol:
FDD6670A-HXY - Footprint:
Package_TO_SOT_SMD:TO-252-2 - 3D model: TO-252-2L (KiCad packages3D, STEP)
- 3D model files:
fdd6670a-hxy-etched.step/fdd6670a-hxy-etched.glbcarry the MPN laser-etched on the die in a toggleableAdom.LaserEtchgroup (Fusion-ready);fdd6670a-hxy.step/fdd6670a-hxy.glbare the bare package body.
Provenance
Data extracted from the manufacturer datasheet, not a distributor listing:
- Datasheet: HXY MOSFET datasheet (6 pp, sha256
33d4249eb7cddd5f, retrieved 2026-10-27, tier: lcsc) - Extractor: parts-factory
2.0.0/extract_pins 0.3, primaryclaude-sonnet-5-5(text), consensusclaude-sonnet-5-5(agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish. - CAD: KiCad official libraries (CC-BY-SA 4.0).
# FDD6670A-HXY
**HXY MOSFET** · MOSFETs · TO-252-2L
FDD6670A-HXY from HXY MOSFET, in a TO-252-2L. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.
## Pinout
| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | G | input | Gate pin of the N-channel MOSFET, with a gate-source voltage rating of ±20 V and operation with gate voltages as low as 4.5 V. |
| 2 | D | passive | Drain pin, rated for VDS of 30 V and continuous drain current of 80 A at TC=25℃ (also the tab of the TO-252-2L package). |
| 3 | S | passive | Source pin of the N-channel MOSFET, with continuous source current of 80 A (body diode) and pulsed source current of 320 A. |
## Key specifications
| Parameter | Value |
|---|---|
| Manufacturer | HXY MOSFET |
| Package | TO-252-2L |
| Category | Triode/MOS Tube/Transistor |
| Pins | 3 |
## Electrical characteristics
Limits as printed in the datasheet (page.json `metadata.characteristics` carries them as data).
| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Drain-Source Voltage | VDS | | | 30 | V | TC=25℃ | 1 |
| Gate-Source Voltage | VGS | -20 | | 20 | V | TC=25℃ | 1 |
| Drain Current Continuous | ID | | | 80 | A | TC=25℃ | 1 |
| Drain Current Continuous | ID | | | 51 | A | TC=100℃ | 1 |
| Drain Current Pulsed | IDM | | | 320 | A | TC=25℃ | 1 |
| Single Pulse Avalanche Energy | EAS | | | 88 | mJ | TC=25℃ | 1 |
| Single Pulse Avalanche Current | IAS | | | 42 | A | TC=25℃ | 1 |
| Power Dissipation | PD | | | 54 | W | TC=25℃ | 1 |
| Power Dissipation Derate above 25℃ | PD | | | 0.43 | W/℃ | Derate above 25℃ | 1 |
| Storage Temperature Range | TSTG | -55 | | 150 | ℃ | | 1 |
| Operating Junction Temperature Range | TJ | -55 | | 150 | ℃ | | 1 |
| Thermal Resistance Junction to ambient | RθJA | | | 62 | ℃/W | | 1 |
| Thermal Resistance Junction to Case | RθJC | | | 2.3 | ℃/W | | 1 |
| Drain-Source Breakdown Voltage | BVDSS | 30 | | | V | VGS=0V , ID=250uA | 2 |
| Drain-Source Leakage Current | IDSS | | | 1 | uA | VDS=30V , VGS=0V , TJ=25℃ | 2 |
| Drain-Source Leakage Current | IDSS | | | 10 | uA | VDS=24V , VGS=0V , TJ=125℃ | 2 |
| Gate-Source Leakage Current | IGSS | -100 | | 100 | nA | VGS=±20V , VDS=0V | 2 |
| Static Drain-Source On-Resistance | RDS(ON) | | 5 | 6.8 | mΩ | VGS=10V , ID=20A | 2 |
| Static Drain-Source On-Resistance | RDS(ON) | | 6.5 | 9 | mΩ | VGS=4.5V , ID=10A | 2 |
| Gate Threshold Voltage | VGS(th) | 1 | 1.6 | 2.5 | V | VGS=VDS , ID =250uA | 2 |
| Single Pulse Avalanche Energy | EAS | 20 | | | mJ | VDD=25V, L=0.1mH, IAS=20A | 2 |
| Continuous Source Current | IS | | | 80 | A | VG=VD=0V , Force Current | 2 |
| Pulsed Source Current | ISM | | | 320 | A | VG=VD=0V , Force Current | 2 |
| Diode Forward Voltage | VSD | | | 1 | V | VGS=0V , IS=1A , TJ=25℃ | 2 |
| BVDSS Temperature Coefficient | △BVDSS/△TJ | | 0.04 | | V/℃ | Reference to 25℃ , ID=1mA | 2 |
| VGS(th) Temperature Coefficient | △VGS(th) | | -4 | | mV/℃ | | 2 |
| Forward Transconductance | gfs | | 18 | | S | VDS=10V , ID=10A | 2 |
| Total Gate Charge | Qg | | 11.1 | | nC | VDS=15V , VGS=4.5V , ID=20A | 2 |
| Gate-Source Charge | Qgs | | 1.85 | | nC | VDS=15V , VGS=4.5V , ID=20A | 2 |
| Gate-Drain Charge | Qgd | | 6.8 | | nC | VDS=15V , VGS=4.5V , ID=20A | 2 |
| Turn-On Delay Time | Td(on) | | 7.5 | | ns | VDD=15V , VGS=10V , RG=3.3Ω , ID=15A | 2 |
| Rise Time | Tr | | 14.5 | | ns | VDD=15V , VGS=10V , RG=3.3Ω , ID=15A | 2 |
| Turn-Off Delay Time | Td(off) | | 35.2 | | ns | VDD=15V , VGS=10V , RG=3.3Ω , ID=15A | 2 |
| Fall Time | Tf | | 9.6 | | ns | VDD=15V , VGS=10V , RG=3.3Ω , ID=15A | 2 |
| Input Capacitance | Ciss | | 1160 | | pF | VDS=25V , VGS=0V , F=1MHz | 2 |
| Output Capacitance | Coss | | 200 | | pF | VGS=0V, VDS=0V, F=1MHz | 2 |
| Reverse Transfer Capacitance | Crss | | 180 | | pF | VGS=0V, VDS=0V, F=1MHz | 2 |
| Gate resistance | Rg | | 2.5 | | Ω | VGS=0V, VDS=0V, F=1MHz | 2 |
## CAD (KiCad official)
- Symbol: `FDD6670A-HXY`
- Footprint: `Package_TO_SOT_SMD:TO-252-2`
- 3D model: TO-252-2L (KiCad packages3D, STEP)
- 3D model files: `fdd6670a-hxy-etched.step` / `fdd6670a-hxy-etched.glb` carry the MPN laser-etched on the die in a toggleable `Adom.LaserEtch` group (Fusion-ready); `fdd6670a-hxy.step` / `fdd6670a-hxy.glb` are the bare package body.
## Provenance
Data extracted from the manufacturer datasheet, not a distributor listing:
- **Datasheet:** [HXY MOSFET datasheet](docs/fdd6670a-hxy-datasheet.pdf) (6 pp, sha256 `33d4249eb7cddd5f`, retrieved 2026-10-27, tier: lcsc)
- **Extractor:** parts-factory `2.0.0` / `extract_pins 0.3`, primary `claude-sonnet-5-5` (text), consensus `claude-sonnet-5-5` (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
- **CAD:** KiCad official libraries (CC-BY-SA 4.0).
[Datasheet PDF](docs/fdd6670a-hxy-datasheet.pdf)