component
FDD6637-VB
Public Made by Adomby adom
VBsemi Elec MOSFETs, TO-252. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.
3D Model
Open in new tab ↗
Loads when you scroll to it. Unloads after 5 minutes in the background.
Symbol & Footprint
Schematic Symbol
Open full view ↗Loads when you scroll to it. Unloads after 5 minutes in the background.
PCB Footprint
Open full view ↗Loads when you scroll to it. Unloads after 5 minutes in the background.
Datasheet
Open in new tab ↗Loads when you scroll to it. Unloads after 5 minutes in the background.
README
markdownFDD6637-VB
VBsemi Elec · MOSFETs · TO-252
FDD6637-VB from VBsemi Elec, in a TO-252. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.
Pinout
| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | G | input | Gate; gate-source voltage limit is ±20 V, with threshold VGS(th) of -1 V to -3 V at ID = -250 µA. |
| 2 | D | passive | Drain (center pin, also the exposed metal tab); VDS rated -30 V with continuous drain current of -70 A (package limited) at TC = 25 °C. |
| 3 | S | passive | Source; continuous source-diode current is -70 A and pulsed is -240 A. |
Key specifications
| Parameter | Value |
|---|---|
| Manufacturer | VBsemi Elec |
| Package | TO-252 |
| Category | Transistors/Thyristors |
| Pins | 3 |
Electrical characteristics
Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).
| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Gate-Source Voltage | VGS | -20 | 20 | V | 1 | ||
| Continuous Drain Current (TC = 25 °C) | ID | -70 | A | TJ = 175 °C, TC = 25 °C | 1 | ||
| Continuous Drain Current (TC = 125 °C) | ID | -58 | A | TJ = 175 °C, TC = 125 °C | 1 | ||
| Pulsed Drain Current | IDM | -240 | A | 1 | |||
| Avalanche Current | IAR | -60 | A | 1 | |||
| Repetitive Avalanche Energy | EAR | 180 | mJ | L = 0.1 mH | 1 | ||
| Operating Junction and Storage Temperature Range | TJ, Tstg | -55 | 175 | °C | 1 | ||
| Drain-Source Breakdown Voltage | VDS | -30 | V | VGS = 0 V, ID = -250 µA | 2 | ||
| Gate Threshold Voltage | VGS(th) | -1 | -3 | V | VDS = VGS, ID = -250 µA | 2 | |
| Gate-Body Leakage | IGSS | -100 | 100 | nA | VDS = 0 V, VGS = ±20 V | 2 | |
| Zero Gate Voltage Drain Current | IDSS | -1 | µA | VDS = -30 V, VGS = 0 V | 2 | ||
| Zero Gate Voltage Drain Current | IDSS | -50 | µA | VDS = -30 V, VGS = 0 V, TJ = 125 °C | 2 | ||
| Zero Gate Voltage Drain Current | IDSS | -250 | µA | VDS = -30 V, VGS = 0 V, TJ = 175 °C | 2 | ||
| On-State Drain Current | ID(on) | -120 | A | VDS = -5 V, VGS = -10 V | 2 | ||
| Drain-Source On-State Resistance | RDS(on) | 0.009 | Ω | VGS = -10 V, ID = -30 A | 2 | ||
| Drain-Source On-State Resistance | RDS(on) | 0.012 | Ω | VGS = -10 V, ID = -30 A, TJ = 125 °C | 2 | ||
| Drain-Source On-State Resistance | RDS(on) | 0.013 | Ω | VGS = -10 V, ID = -30 A, TJ = 175 °C | 2 | ||
| Drain-Source On-State Resistance | RDS(on) | 0.011 | Ω | VGS = -4.5 V, ID = -20 A | 2 | ||
| Forward Transconductance | gfs | 20 | S | VDS = -15 V, ID = -75 A | 2 | ||
| Input Capacitance | Ciss | 4000 | pF | VGS = 0 V, VDS = -25 V, f = 1 MHz | 2 | ||
| Output Capacitance | Coss | 1565 | pF | VGS = 0 V, VDS = -25 V, f = 1 MHz | 2 | ||
| Reverse Transfer Capacitance | Crss | 715 | pF | VGS = 0 V, VDS = -25 V, f = 1 MHz | 2 | ||
| Total Gate Charge | Qg | 160 | 240 | nC | VDS = -15 V, VGS = -10 V, ID = -75 A | 2 | |
| Gate-Source Charge | Qgs | 32 | nC | VDS = -15 V, VGS = -10 V, ID = -75 A | 2 | ||
| Gate-Drain Charge | Qgd | 30 | nC | VDS = -15 V, VGS = -10 V, ID = -75 A | 2 | ||
| Turn-On Delay Time | td(on) | 25 | 40 | ns | VDD = -15 V, RL = 0.2 Ω, ID = -75 A, VGEN = -10 V, Rg = 2.5 Ω | 2 | |
| Rise Time | tr | 225 | 360 | ns | VDD = -15 V, RL = 0.2 Ω, ID = -75 A, VGEN = -10 V, Rg = 2.5 Ω | 2 | |
| Turn-Off Delay Time | td(off) | 150 | 240 | ns | VDD = -15 V, RL = 0.2 Ω, ID = -75 A, VGEN = -10 V, Rg = 2.5 Ω | 2 | |
| Fall Time | tf | 210 | 340 | ns | VDD = -15 V, RL = 0.2 Ω, ID = -75 A, VGEN = -10 V, Rg = 2.5 Ω | 2 | |
| Continuous Current (source-drain diode) | IS | -70 | A | TC = 25 °C | 2 | ||
| Pulsed Current (source-drain diode) | ISM | -240 | A | 2 | |||
| Forward Voltage | VSD | -1.2 | -1.5 | V | IF = -75 A, VGS = 0 V | 2 | |
| Reverse Recovery Time | trr | 55 | 100 | ns | IF = -75 A, dI/dt = 100 A/µs | 2 | |
| Peak Reverse Recovery Current | IRM(REC) | 2.5 | 5 | A | IF = -75 A, dI/dt = 100 A/µs | 2 | |
| Reverse Recovery Charge | Qrr | 0.07 | 0.25 | µC | IF = -75 A, dI/dt = 100 A/µs | 2 |
CAD (KiCad official)
- Symbol:
FDD6637-VB - Footprint:
Package_TO_SOT_SMD:TO-252-2 - 3D model: TO-252 (KiCad packages3D, STEP)
- 3D model files:
fdd6637-vb-etched.step/fdd6637-vb-etched.glbcarry the MPN laser-etched on the die in a toggleableAdom.LaserEtchgroup (Fusion-ready);fdd6637-vb.step/fdd6637-vb.glbare the bare package body.
Provenance
Data extracted from the manufacturer datasheet, not a distributor listing:
- Datasheet: VBsemi Elec datasheet (8 pp, sha256
f8ef19e54d78af76, retrieved 2026-10-20, tier: lcsc) - Extractor: parts-factory
2.0.0/extract_pins 0.3, primaryclaude-sonnet-5-5(text+vision), consensusclaude-opus-5-5(agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish. - CAD: KiCad official libraries (CC-BY-SA 4.0).