component
FDD5810
Public Made by Adomby adom
UMW MOSFETs, TO-252. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.
3D Model
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Symbol & Footprint
Schematic Symbol
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PCB Footprint
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Datasheet
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Contents
README
markdownFDD5810
UMW · MOSFETs · TO-252
FDD5810 from UMW, in a TO-252. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.
Pinout
| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | G | input | GATE terminal of the 60V N-channel MOSFET; the datasheet gives VGS limits of ±20 V (absolute maximum) and a VGS(th) of 1 to 3 V range with typical 1.6 V at 250 µA. |
| 2 | D | passive | DRAIN terminal of the MOSFET; the datasheet rates VDSS at 60 V and continuous drain current at 37 A (VGS = 10 V, TC = 25°C), with RθJA of 52 °C/W for 1 in² copper pad. |
| 3 | S | passive | SOURCE terminal of the MOSFET, the reference for gate-to-source voltage; the datasheet gives no separate pin-specific limit for this terminal. |
Key specifications
| Parameter | Value |
|---|---|
| Manufacturer | UMW |
| Package | TO-252 |
| Category | Transistors/Thyristors |
| Pins | 3 |
Electrical characteristics
Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).
| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Drain to Source Breakdown Voltage | BVDSS | 60 | V | ID=250µA, VGS=0V | 3 | ||
| Zero Gate Voltage Drain Current | IDSS | 1 | µA | VDS=48V, VGS=0V | 3 | ||
| Zero Gate Voltage Drain Current (TJ=125°C) | IDSS | 250 | µA | VDS=48V, VGS=0V, TJ=125°C | 3 | ||
| Gate to Source Leakage Current | IGSS | -100 | 100 | nA | VGS=±20V | 3 | |
| Drain to Source On Resistance | RDS(ON) | 18 | 22 | mΩ | ID=32A, VGS=10V | 3 | |
| Drain to Source On Resistance | RDS(ON) | 22 | 27 | mΩ | ID=29A, VGS=5V | 3 | |
| Input Capacitance | Ciss | 1420 | 1890 | pF | VDS=25V, VGS=0V, f=1MHz | 3 | |
| Output Capacitance | Coss | 150 | 200 | pF | VDS=25V, VGS=0V, f=1MHz | 3 | |
| Reverse Transfer Capacitance | Crss | 65 | 100 | pF | VDS=25V, VGS=0V, f=1MHz | 3 | |
| Drain to Source Voltage | VDSS | 60 | V | 1 | |||
| Gate to Source Voltage | VGS | -20 | 20 | V | 1 | ||
| Drain Current Continuous | ID | 37 | A | VGS=10V | 1 | ||
| Drain Current Continuous | ID | 33 | A | VGS=5V | 1 | ||
| Drain Current Continuous | ID | 7.4 | A | TA=25°C, VGS=10V, with RθJA=52°C/W | 1 | ||
| Single Pulse Avalanche Energy | EAS | 45 | mJ | Starting TJ=25°C, L=110μH, IAS=28A, VDD=54V, VGS=10V | 1 | ||
| Power Dissipation | PD | 72 | W | 1 | |||
| Operating and Storage Temperature | TJ, TSTG | -55 | 150 | °C | 1 | ||
| Maximum Thermal Resistance Junction to Case TO-252 | RθJC | 2.1 | °C/W | Junction to case, TO-252 | 2 | ||
| Thermal Resistance Junction to Ambient TO-252 | RθJA | 52 | °C/W | TO-252, 1in² copper pad area | 2 |
Materials and finish
As the datasheet states them (page.json metadata.appearance; the 3D model's colours follow it).
| Part | Material | Colour / plating | Datasheet says | Page |
|---|---|---|---|---|
| housing | ABS | Motor / Body Load Control ABS Systems | 1 |
CAD (KiCad official)
- Symbol:
FDD5810 - Footprint:
Package_TO_SOT_SMD:TO-252-2 - 3D model: TO-252 (KiCad packages3D, STEP)
- 3D model files:
fdd5810-etched.step/fdd5810-etched.glbcarry the MPN laser-etched on the die in a toggleableAdom.LaserEtchgroup (Fusion-ready);fdd5810.step/fdd5810.glbare the bare package body.
Provenance
Data extracted from the manufacturer datasheet, not a distributor listing:
- Datasheet: UMW datasheet (10 pp, sha256
1ecffc1bea2c76dc, retrieved 2026-10-18, tier: lcsc) - Extractor: parts-factory
2.0.0/extract_pins 0.3, primaryclaude-haiku-5-5(text), consensusclaude-sonnet-5-5(agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish. - CAD: KiCad official libraries (CC-BY-SA 4.0).