component
FDD5680
Public Made by Adomby adom
UMW MOSFETs, TO-252. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.
Generated by kicad-footprint-generator · KiCad file format 20260206
| Name | Last updated |
|---|---|
| docs | 17d ago |
| viewers | 17d ago |
| fdd5680-etched.glb | 17d ago |
| fdd5680-etched.step | 17d ago |
| fdd5680-hero.glb | 17d ago |
| fdd5680-hero.overlay.json | 17d ago |
| fdd5680.glb | 17d ago |
| fdd5680.kicad_mod | 17d ago |
| fdd5680.kicad_sym | 17d ago |
| fdd5680.lbr | 17d ago |
| fdd5680.step | 17d ago |
| package.json | 17d ago |
| page.json | 17d ago |
| README.md | 17d ago |
FDD5680
UMW · MOSFETs · TO-252
FDD5680 from UMW, in a TO-252. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.
Pinout
| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | G | input | GATE; gate-source voltage is rated at ±20 V (VGSS) per the absolute maximum ratings. |
| 2 | D | passive | DRAIN; this pin is the drain tab, which is the thermal reference for RθJC (2.1 °C/W), and continuous drain current is rated 38 A at TC=25°C. |
| 3 | S | passive | SOURCE; the drain-source voltage is rated 60 V (VDSS) and the body diode forward current is rated up to 2.3 A. |
Key specifications
| Parameter | Value |
|---|---|
| Manufacturer | UMW |
| Package | TO-252 |
| Category | Transistors/Thyristors |
| Pins | 3 |
Electrical characteristics
Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).
| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Drain-Source Voltage | VDSS | 60 | V | 1 | |||
| Gate-Source Voltage | VGSS | -20 | 20 | V | 1 | ||
| Operating and Storage Junction Temperature Range | TJ, TSTG | -55 | 150 | °C | 1 | ||
| Maximum Drain Current - Continuous | ID | 38 | A | TC=25°C | 1 | ||
| Maximum Drain Current - Continuous | ID | 8.5 | A | TA=25°C (Note 1a) | 1 | ||
| Maximum Drain Current - Pulsed | ID | 100 | A | 1 | |||
| Maximum Power Dissipation | PD | 60 | W | TC=25°C (Note 3) | 1 | ||
| Maximum Power Dissipation | PD | 2.8 | W | TA=25°C (Note 1a) | 1 | ||
| Maximum Power Dissipation | PD | 1.3 | W | TA=25°C (Note 1b) | 1 | ||
| Drain-Source Breakdown Voltage | BVDSS | 60 | V | VGS=0V, ID=250µA | 3 | ||
| Zero Gate Voltage Drain Current | IDSS | 1 | µA | VDS=48V, VGS=0V | 3 | ||
| Gate-Body Leakage Current Forward | IGSSF | 100 | nA | VGS=20V, VDS=0V | 3 | ||
| Gate-Body Leakage Current Reverse | IGSSR | -100 | nA | VGS=-20V, VDS=0V | 3 | ||
| Gate Threshold Voltage | VGS(th) | 1 | 2.2 | V | VDS=VGS, ID=250µA | 3 | |
| Static Drain-Source On-Resistance | RDS(ON) | 17 | 21 | mΩ | VGS=10V, ID=8.5A | 3 | |
| Static Drain-Source On-Resistance | RDS(ON) | 19 | 25 | mΩ | VGS=6V, ID=7.5A | 3 | |
| On-State Drain Current | ID(ON) | 140 | A | VGS=10V, VDS=5V | 3 | ||
| Maximum Drain-Source Avalanche Current | IAR | 38 | A | 3 | |||
| Single Pulse Drain-Source Avalanche Energy | WDSS | 60 | mJ | VDD=30V, ID=38A | 3 | ||
| Maximum Continuous Drain-Source Diode Forward Current | IS | 2.3 | A | 4 | |||
| Drain-Source Diode Forward Voltage | VSD | 0.75 | 1.2 | V | VGS=0V, IS=2.3A (Note 2) | 4 | |
| Breakdown Voltage Temperature Coefficient | ∆BVDSS/∆TJ | 50 | mV/°C | ID=250µA, Referenced to 25°C | 3 | ||
| Gate Threshold Voltage Temperature Coefficient | ∆VGS(th)/∆TJ | -6.4 | mV/°C | ID=250µA, Referenced to 25°C | 3 | ||
| Forward Transconductance | gFS | 30 | S | VDS=5V, ID=8.5A | 3 | ||
| Input Capacitance | Ciss | 1835 | pF | VDS=30V, VGS=0V, f=1MHz | 3 | ||
| Output Capacitance | Coss | 210 | pF | VDS=30V, VGS=0V, f=1MHz | 3 | ||
| Reverse Transfer Capacitance | Crss | 90 | pF | VDS=30V, VGS=0V, f=1MHz | 3 | ||
| Turn-On Delay Time | tD(on) | 15 | 27 | ns | VDD=30V, ID=1A, VGS=10V, RGEN=6Ω | 4 | |
| Turn-On Rise Time | tr | 9 | 18 | ns | VDD=30V, ID=1A, VGS=10V, RGEN=6Ω | 4 | |
| Turn-Off Delay Time | tD(off) | 35 | 56 | ns | VDD=30V, ID=1A, VGS=10V, RGEN=6Ω | 4 | |
| Turn-Off Fall Time | tf | 16 | 26 | ns | VDD=30V, ID=1A, VGS=10V, RGEN=6Ω | 4 | |
| Total Gate Charge | Qg | 33 | 46 | nC | VDS=30V, ID=8.5A, VGS=10V | 4 | |
| Gate-Source Charge | Qgs | 6.5 | nC | VDS=30V, ID=8.5A, VGS=10V | 4 | ||
| Gate-Drain Charge | Qgd | 7.5 | nC | VDS=30V, ID=8.5A, VGS=10V | 4 | ||
| Thermal Resistance, Junction to Case | RθJC | 2.1 | °C/W | 2 | |||
| Thermal Resistance, Junction to Ambient | RθJA | 96 | °C/W | Mounted on a 0.076 in² pad of 2oz copper (Note 1b) | 2 | ||
| Thermal Resistance, Junction to Ambient | RθJA | 45 | °C/W | Mounted on a 1 in² pad of 2oz copper (Note 1a) | 4 |
CAD (KiCad official)
- Symbol:
FDD5680 - Footprint:
Package_TO_SOT_SMD:TO-252-2 - 3D model: TO-252 (KiCad packages3D, STEP)
- 3D model files:
fdd5680-etched.step/fdd5680-etched.glbcarry the MPN laser-etched on the die in a toggleableAdom.LaserEtchgroup (Fusion-ready);fdd5680.step/fdd5680.glbare the bare package body.
Provenance
Data extracted from the manufacturer datasheet, not a distributor listing:
- Datasheet: UMW datasheet (9 pp, sha256
88a1940c95662201, retrieved 2026-10-18, tier: lcsc) - Extractor: parts-factory
2.0.0/extract_pins 0.3, primaryclaude-haiku-5-5(text), consensusclaude-sonnet-5-5(agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish. - CAD: KiCad official libraries (CC-BY-SA 4.0).