component
FDD4685
Public Made by Adomby adom
UMW MOSFETs, TO-252. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.
Generated by kicad-footprint-generator · KiCad file format 20260206
| Name | Last updated |
|---|---|
| docs | 17d ago |
| viewers | 17d ago |
| fdd4685-etched.glb | 17d ago |
| fdd4685-etched.step | 17d ago |
| fdd4685-hero.glb | 17d ago |
| fdd4685-hero.overlay.json | 17d ago |
| fdd4685.glb | 17d ago |
| fdd4685.kicad_mod | 17d ago |
| fdd4685.kicad_sym | 17d ago |
| fdd4685.lbr | 17d ago |
| fdd4685.step | 17d ago |
| package.json | 17d ago |
| page.json | 17d ago |
| README.md | 17d ago |
FDD4685
UMW · MOSFETs · TO-252
FDD4685 from UMW, in a TO-252. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.
Pinout
| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | G | input | GATE terminal of the -40 V P-channel MOSFET; gate-to-source voltage is rated at ±20 V (VGS). |
| 2 | D | passive | DRAIN terminal of the -40 V P-channel MOSFET; rated VDS of -40 V with continuous drain current of -32 A (package limited) at TC=25°C. |
| 3 | S | passive | SOURCE terminal of the -40 V P-channel MOSFET; the reference for the ±20 V gate-to-source rating. |
Key specifications
| Parameter | Value |
|---|---|
| Manufacturer | UMW |
| Package | TO-252 |
| Category | Transistors/Thyristors |
| Pins | 3 |
Electrical characteristics
Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).
| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Drain to Source Breakdown Voltage | BVDSS | -40 | V | ID=-250µA, VGS=0V | 3 | ||
| Zero Gate Voltage Drain Current | IDSS | -1 | µA | VDS=-32V, VGS=0V | 3 | ||
| Gate to Source Leakage Current | IGSS | -100 | 100 | nA | VGS=±20V, VDS=0V | 3 | |
| Gate to Source Threshold Voltage | VGS(th) | 1 | -1.6 | -3 | V | VDS=VGS, ID=-250µA | 3 |
| Input Capacitance | Ciss | 1790 | 2380 | pF | VDS=-20V, VGS=0V, f=1MHz | 3 | |
| Output Capacitance | Coss | 260 | 345 | pF | VDS=-20V, VGS=0V, f=1MHz | 3 | |
| Reverse Transfer Capacitance | Crss | 140 | 205 | pF | VDS=-20V, VGS=0V, f=1MHz | 3 | |
| Turn-On Delay Time | tD(on) | 8 | 16 | ns | VDD=-20V, ID=-8.4A, VGS=-10V, RGEN=6Ω | 3 | |
| Rise Time | tr | 15 | 27 | ns | VDD=-20V, ID=-8.4A, VGS=-10V, RGEN=6Ω | 3 | |
| Turn-Off Delay Time | tD(off) | 34 | 55 | ns | VDD=-20V, ID=-8.4A, VGS=-10V, RGEN=6Ω | 3 | |
| Fall Time | tf | 14 | 26 | ns | VDD=-20V, ID=-8.4A, VGS=-10V, RGEN=6Ω | 3 | |
| Total Gate Charge | Qg(TOT) | 19 | 27 | nC | VDD=-20V, ID=-8.4A, VGS=-5V | 3 | |
| Source to Drain Diode Forward Voltage | VSD | -0.85 | -1.2 | V | VGS=0V, IS=-8.4A (Note 2) | 3 | |
| Reverse Recovery Time | trr | 30 | 45 | ns | IF=-8.4A, di/dt=100A/µs | 3 | |
| Reverse Recovery Charge | Qrr | 31 | 47 | nC | IF=-8.4A, di/dt=100A/µs | 3 | |
| Static Drain to Source On Resistance | RDS(ON) | 23 | 27 | mΩ | VGS=-10V, ID=-8.4A | 3 | |
| Static Drain to Source On Resistance | RDS(ON) | 30 | 35 | mΩ | VGS=-4.5V, ID=-7A | 3 | |
| Forward Transconductance | gFS | 23 | S | VDS=-5V, ID=-8.4A | 3 | ||
| Gate Resistance | Rg | 4 | Ω | f=1MHz | 3 | ||
| Gate to Source Gate Charge | Qgs | 5.6 | nC | VDD=-20V, ID=-8.4A, VGS=-5V | 3 | ||
| Gate to Drain Miller Charge | Qgd | 6.1 | nC | VDD=-20V, ID=-8.4A, VGS=-5V | 3 | ||
| Breakdown Voltage Temperature Coefficient | ∆BVDSS/∆TJ | -33 | mV/°C | ID=-250µA, Referenced to 25°C | 3 | ||
| Gate to Source Threshold Voltage Temperature Coefficient | ∆VGS(th)/∆TJ | 4.9 | mV/°C | ID=-250µA, Referenced to 25°C | 3 | ||
| Drain to Source Voltage | VDS | -40 | V | 1 | |||
| Gate to Source Voltage | VGS | -20 | 20 | V | 1 | ||
| Drain Current -Continuous (Package limited) | ID | -32 | A | TC=25°C | 1 | ||
| Drain Current -Continuous (Silicon limited) | ID | -40 | A | TC=25°C (Note 1) | 1 | ||
| Drain Current -Continuous | ID | -8.4 | A | TA=25°C (Note 1a) | 1 | ||
| Drain Current -Pulsed | ID | -100 | A | 1 | |||
| Single Pulse Avalanche Energy | EAS | 121 | mJ | (Note 3) | 1 | ||
| Power Dissipation | PD | 69 | W | TC=25°C | 1 | ||
| Power Dissipation | PD | 3 | W | TA=25°C (Note 1a) | 1 | ||
| Operating and Storage Junction Temperature Range | TJ, TSTG | -55 | 150 | °C | 1 | ||
| Thermal Resistance, Junction to Case | RθJC | 1.8 | °C/W | 2 | |||
| Thermal Resistance, Junction to Ambient | RθJA | 40 | °C/W | Note 1a: 1 in² pad of 2 oz copper | 2 |
Materials and finish
As the datasheet states them (page.json metadata.appearance; the 3D model's colours follow it).
| Part | Material | Colour / plating | Datasheet says | Page |
|---|---|---|---|---|
| contacts | copper | solder mounting surface of the drain pins. RθJC is guaranteed by design while RθJA is determined by the user’s board design. a. 40°C/W when mounted on a 1 in 2 pad of 2 oz copper | 4 |
CAD (KiCad official)
- Symbol:
FDD4685 - Footprint:
Package_TO_SOT_SMD:TO-252-2 - 3D model: TO-252 (KiCad packages3D, STEP)
- 3D model files:
fdd4685-etched.step/fdd4685-etched.glbcarry the MPN laser-etched on the die in a toggleableAdom.LaserEtchgroup (Fusion-ready);fdd4685.step/fdd4685.glbare the bare package body.
Provenance
Data extracted from the manufacturer datasheet, not a distributor listing:
- Datasheet: UMW datasheet (10 pp, sha256
10a3a0b52c971ae0, retrieved 2026-10-18, tier: lcsc) - Extractor: parts-factory
2.0.0/extract_pins 0.3, primaryclaude-haiku-5-5(text), consensusclaude-sonnet-5-5(agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish. - CAD: KiCad official libraries (CC-BY-SA 4.0).