component
FDD3706-HXY
Public Made by Adomby adom
HXY MOSFET MOSFETs, TO-252-2L. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.
Generated by kicad-footprint-generator · KiCad file format 20260206
| Name | Last updated |
|---|---|
| docs | 11d ago |
| viewers | 11d ago |
| fdd3706-hxy-etched.glb | 11d ago |
| fdd3706-hxy-etched.step | 11d ago |
| fdd3706-hxy-hero.glb | 11d ago |
| fdd3706-hxy-hero.overlay.json | 11d ago |
| fdd3706-hxy.glb | 11d ago |
| fdd3706-hxy.kicad_mod | 11d ago |
| fdd3706-hxy.kicad_sym | 11d ago |
| fdd3706-hxy.lbr | 11d ago |
| fdd3706-hxy.step | 11d ago |
| package.json | 11d ago |
| page.json | 11d ago |
| README.md | 11d ago |
FDD3706-HXY
HXY MOSFET · MOSFETs · TO-252-2L
FDD3706-HXY from HXY MOSFET, in a TO-252-2L. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.
Pinout
| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | G | input | Gate terminal; the datasheet rates gate-source voltage at +12V and gate threshold voltage VGS(th) at 0.5V to 0.9V. |
| 2 | D | passive | Drain terminal; the datasheet rates drain-source voltage VDS at 20V and continuous drain current ID at 40A at TC=25°C. |
| 3 | S | passive | Source terminal; the datasheet gives forward on voltage VSD at 1.2V maximum for IS=20A with VGS=0V. |
Key specifications
| Parameter | Value |
|---|---|
| Manufacturer | HXY MOSFET |
| Package | TO-252-2L |
| Category | Transistors/Thyristors |
| Pins | 3 |
Electrical characteristics
Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).
| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Drain-Source Breakdown Voltage | BVDSS | 20 | V | VGS=0V, ID=250uA | 2 | ||
| Static Drain-Source On-Resistance | RDS(ON) | 7.5 | 9 | mΩ | VGS=4.5V, ID=20A | 2 | |
| Gate Threshold Voltage | VGS(th) | 0.5 | 0.9 | V | VDS=VGS, ID=250uA | 2 | |
| Drain-Source Leakage Current | IDSS | 10 | uA | VDS=16V, VGS=0V | 2 | ||
| Gate-Source Leakage | IGSS | 100 | nA | VGS=+12V, VDS=0V | 2 | ||
| Total Gate Charge | Qg | 16 | 25.6 | nC | ID=20A, VDS=10V, VGS=4.5V | 2 | |
| Input Capacitance | Ciss | 1400 | 2240 | pF | VGS=0V, VDS=10V, f=1.0MHz | 2 | |
| Gate Resistance | Rg | 1 | 2 | Ω | f=1.0MHz | 2 | |
| Forward On Voltage | VSD | 1.2 | V | IS=20A, VGS=0V | 2 | ||
| Drain-Source Voltage | VDS | 20 | V | 1 | |||
| Gate-Source Voltage | VGS | 12 | V | 1 | |||
| Drain Current, VGS @ 4.5V | ID@TC=25℃ | 40 | A | TC=25℃, VGS @ 4.5V | 1 | ||
| Drain Current, VGS @ 4.5V | ID@TC=100℃ | 25 | A | TC=100℃, VGS @ 4.5V | 1 | ||
| Pulsed Drain Current | IDM | 80 | A | 1 | |||
| Total Power Dissipation | PD@TC=25℃ | 15.6 | W | TC=25℃ | 1 | ||
| Total Power Dissipation | PD@TA=25℃ | 5 | W | TA=25℃ | 1 | ||
| Single Pulse Avalanche Energy | EAS | 150 | mJ | 1 | |||
| Storage Temperature Range | TSTG | -55 | 150 | ℃ | 1 | ||
| Operating Junction Temperature Range | TJ | -55 | 150 | ℃ | 1 | ||
| Maximum Thermal Resistance, Junction-case | Rthj-c | 8 | ℃/W | 1 | |||
| Maximum Thermal Resistance, Junction-ambient | Rthj-a | 25 | ℃/W | Surface mounted on 1 in2 FR4 copper pad, t<10sec (note 3) | 1 |
CAD (KiCad official)
- Symbol:
FDD3706-HXY - Footprint:
Package_TO_SOT_SMD:TO-252-2 - 3D model: TO-252-2L (KiCad packages3D, STEP)
- 3D model files:
fdd3706-hxy-etched.step/fdd3706-hxy-etched.glbcarry the MPN laser-etched on the die in a toggleableAdom.LaserEtchgroup (Fusion-ready);fdd3706-hxy.step/fdd3706-hxy.glbare the bare package body.
Provenance
Data extracted from the manufacturer datasheet, not a distributor listing:
- Datasheet: HXY MOSFET datasheet (7 pp, sha256
85a407a8b9daac65, retrieved 2026-10-28, tier: lcsc) - Extractor: parts-factory
2.0.0/extract_pins 0.3, primaryclaude-haiku-5-5(text), consensusclaude-sonnet-5-5(agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish. - CAD: KiCad official libraries (CC-BY-SA 4.0).