component
FDD068AN03L
Public Made by Adomby adom
UMW MOSFETs, TO-252. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.
3D Model
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Symbol & Footprint
Schematic Symbol
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PCB Footprint
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Datasheet
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README
markdownFDD068AN03L
UMW · MOSFETs · TO-252
FDD068AN03L from UMW, in a TO-252. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.
Pinout
| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | G | input | GATE terminal of the 30 V N-channel MOSFET; gate-to-source voltage is rated at ±20 V and threshold VGS(th) is 1.2 to 2.5 V. |
| 2 | D | passive | DRAIN terminal, rated for 30 V drain-to-source voltage and 35 A continuous drain current at VGS=10 V (TC<154°C). |
| 3 | S | passive | SOURCE terminal of the MOSFET, the reference for the ±20 V gate-to-source rating. |
Key specifications
| Parameter | Value |
|---|---|
| Manufacturer | UMW |
| Package | TO-252 |
| Category | Transistors/Thyristors |
| Pins | 3 |
Electrical characteristics
Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).
| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Drain to Source Voltage | VDSS | 30 | V | 1 | |||
| Gate to Source Voltage | VGS | -20 | 20 | V | 1 | ||
| Drain Current Continuous | ID | 35 | A | TC<154°C, VGS=10V | 1 | ||
| Drain Current Continuous | ID | 17 | A | Tamb=25°C, VGS=10V, with RθJA=52°C/W | 1 | ||
| Single Pulse Avalanche Energy | EAS | 168 | mJ | Note 1 | 1 | ||
| Power Dissipation | PD | 80 | W | 1 | |||
| Derate above 25°C | 0.53 | °C/W | 1 | ||||
| Operating and Storage Temperature | TJ, TSTG | -55 | 175 | °C | 1 | ||
| Thermal Resistance, Junction-to-Case | RθJC | 1.88 | °C/W | TO-252 | 2 | ||
| Thermal Resistance, Junction-to-Ambient | RθJA | 100 | °C/W | TO-252 | 2 | ||
| Thermal Resistance, Junction-to-Ambient | RθJA | 52 | °C/W | TO-252, 1in² copper pad area | 2 | ||
| Drain to Source Breakdown Voltage | BVDSS | 30 | V | ID=250µA, VGS=0V | 3 | ||
| Zero Gate Voltage Drain Current | IDSS | 1 | µA | VDS=25V, VGS=0V | 3 | ||
| Zero Gate Voltage Drain Current | IDSS | 250 | µA | VDS=25V, VGS=0V, TJ=150°C | 3 | ||
| Gate to Source Leakage Current | IGSS | -100 | 100 | nA | VGS=±20V | 3 | |
| Gate to Source Threshold Voltage | VGS(th) | 1.2 | 2.5 | V | VDS=VGS, ID=250µA | 3 | |
| Drain to Source On Resistance | RDS(ON) | 4.7 | 5.7 | mΩ | ID=35A, VGS=10V | 3 | |
| Drain to Source On Resistance | RDS(ON) | 5.7 | 6.8 | mΩ | ID=35A, VGS=4.5V | 3 | |
| Input Capacitance | Ciss | 2525 | pF | VDS=15V, VGS=0V, f=1MHz | 3 | ||
| Output Capacitance | Coss | 490 | pF | VDS=15V, VGS=0V, f=1MHz | 3 | ||
| Reverse Transfer Capacitance | Crss | 300 | pF | VDS=15V, VGS=0V, f=1MHz | 3 | ||
| Source to Drain Diode Forward Voltage | VSD | 1.25 | V | ISD=35A | 4 | ||
| Source to Drain Diode Forward Voltage | VSD | 1 | V | ISD=15A | 4 | ||
| Reverse Recovery Time | trr | 27 | ns | IF=35A, di/dt=100A/µs | 4 | ||
| Reverse Recovery Charge | Qrr | 12 | nC | IF=35A, di/dt=100A/µs | 4 |
CAD (KiCad official)
- Symbol:
FDD068AN03L - Footprint:
Package_TO_SOT_SMD:TO-252-2 - 3D model: TO-252 (KiCad packages3D, STEP)
- 3D model files:
fdd068an03l-etched.step/fdd068an03l-etched.glbcarry the MPN laser-etched on the die in a toggleableAdom.LaserEtchgroup (Fusion-ready);fdd068an03l.step/fdd068an03l.glbare the bare package body.
Provenance
Data extracted from the manufacturer datasheet, not a distributor listing:
- Datasheet: UMW datasheet (10 pp, sha256
3990c5d9ff9cb402, retrieved 2026-10-18, tier: lcsc) - Extractor: parts-factory
2.0.0/extract_pins 0.3, primaryclaude-haiku-5-5(text), consensusclaude-sonnet-5-5(agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish. - CAD: KiCad official libraries (CC-BY-SA 4.0).