component
FDC86244-HF
Public Made by Adomby adom
KEXIN MOSFETs, SOT-23-6. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.
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FDC86244-HF
KEXIN · MOSFETs · SOT-23-6
FDC86244-HF from KEXIN, in a SOT-23-6. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.
Pinout
| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | D | passive | Drain terminal of the N-channel MOSFET, rated for VDS = 150 V with ID = 2.3 A at VGS = 10 V. |
| 2 | D | passive | Drain terminal of the N-channel MOSFET, rated for VDS = 150 V with ID = 2.3 A at VGS = 10 V. |
| 3 | G | passive | Gate terminal of the N-channel MOSFET, with gate-source voltage VGS rated at ±20 V. |
| 4 | S | passive | Source terminal of the N-channel MOSFET, the reference for the gate-source voltage VGS rated at ±20 V. |
| 5 | D | passive | Drain terminal of the N-channel MOSFET, rated for VDS = 150 V with ID = 2.3 A at VGS = 10 V. |
| 6 | D | passive | Drain terminal of the N-channel MOSFET, rated for VDS = 150 V with ID = 2.3 A at VGS = 10 V. |
Key specifications
| Parameter | Value |
|---|---|
| Manufacturer | KEXIN |
| Package | SOT-23-6 |
| Category | Transistors/Thyristors |
| Pins | 6 |
Electrical characteristics
Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).
| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Drain-Source Voltage | VDS | 150 | V | Ta = 25°C | 1 | ||
| Gate-Source Voltage | VGS | -20 | 20 | V | Ta = 25°C | 1 | |
| Continuous Drain Current | ID | 2.3 | A | Ta = 25°C | 1 | ||
| Pulsed Drain Current | IDM | 10 | A | Ta = 25°C | 1 | ||
| Power Dissipation | PD | 1.6 | W | Note 1: 1 in² pad of 2 oz copper | 1 | ||
| Power Dissipation | PD | 0.8 | W | Note 2: minimum pad of 2 oz copper | 1 | ||
| Single Pulse Avalanche Energy | EAS | 12 | mJ | Note 3: Starting TJ=25°C, L=1.0 mH, IAS=5.0 A, VDD=135 V, VGS=10 V | 1 | ||
| Junction Temperature | TJ | 150 | °C | 1 | |||
| Storage Temperature Range | Tstg | -55 | 150 | °C | 1 | ||
| Thermal Resistance Junction-to-Ambient | RthJA | 78 | °C/W | Note 1: 1 in² pad of 2 oz copper | 1 | ||
| Thermal Resistance Junction-to-Case | RthJC | 30 | °C/W | 1 | |||
| Drain-Source Breakdown Voltage | VDSS | 150 | V | ID=250µA, VGS=0V | 2 | ||
| Zero Gate Voltage Drain Current | IDSS | 1 | µA | VDS=120V, VGS=0V | 2 | ||
| Gate-Body Leakage Current | IGSS | -100 | 100 | nA | VDS=0V, VGS=±20V | 2 | |
| Gate Threshold Voltage | VGS(th) | 2 | 4 | V | VDS=VGS, ID=250µA | 2 | |
| Static Drain-Source On-Resistance | RDS(On) | 144 | mΩ | VGS=10V, ID=2.3A | 2 | ||
| Static Drain-Source On-Resistance | RDS(On) | 273 | mΩ | VGS=10V, ID=2.3A, TJ=125°C | 2 | ||
| Static Drain-Source On-Resistance | RDS(On) | 188 | mΩ | VGS=6V, ID=1.9A | 2 | ||
| Input Capacitance | Ciss | 260 | 345 | pF | VGS=0V, VDS=75V, f=1MHz | 2 | |
| Output Capacitance | Coss | 32 | 45 | pF | VGS=0V, VDS=75V, f=1MHz | 2 | |
| Reverse Transfer Capacitance | Crss | 1.7 | 5 | pF | VGS=0V, VDS=75V, f=1MHz | 2 | |
| Total Gate Charge | Qg | 4.2 | 6 | nC | VGS=0 to 10V, VDS=75V, ID=2.3A | 2 | |
| Total Gate Charge | Qg | 2.4 | 4 | nC | VGS=0 to 5V, VDS=75V, ID=2.3A | 2 | |
| Turn-On Delay Time | td(on) | 4.7 | 10 | ns | VDD=75V, ID=2.3A, VGS=10V, RGEN=6Ω | 2 | |
| Turn-On Rise Time | tr | 1.4 | 10 | ns | VDD=75V, ID=2.3A, VGS=10V, RGEN=6Ω | 2 | |
| Turn-Off Delay Time | td(off) | 10 | 20 | ns | VDD=75V, ID=2.3A, VGS=10V, RGEN=6Ω | 2 | |
| Turn-Off Fall Time | tf | 3.1 | 10 | ns | VDD=75V, ID=2.3A, VGS=10V, RGEN=6Ω | 2 | |
| Body Diode Reverse Recovery Time | trr | 45 | 73 | ns | IF=2.3A, dI/dt=100A/µs | 2 | |
| Body Diode Reverse Recovery Charge | Qrr | 33 | 53 | nC | IF=2.3A, dI/dt=100A/µs | 2 | |
| Maximum Body-Diode Continuous Current | IS | 2.3 | A | 2 | |||
| Diode Forward Voltage | VSD | 1.3 | V | IS=2.3A, VGS=0V | 2 |
CAD (KiCad official)
- Symbol:
FDC86244-HF - Footprint:
Package_TO_SOT_SMD:SOT-23-6 - 3D model: SOT-23-6 (KiCad packages3D, STEP)
- 3D model files:
fdc86244-hf-etched.step/fdc86244-hf-etched.glbcarry the MPN laser-etched on the die in a toggleableAdom.LaserEtchgroup (Fusion-ready);fdc86244-hf.step/fdc86244-hf.glbare the bare package body.
Provenance
Data extracted from the manufacturer datasheet, not a distributor listing:
- Datasheet: KEXIN datasheet (5 pp, sha256
3a42c0a1c264461d, retrieved 2026-10-17, tier: lcsc) - Extractor: parts-factory
2.0.0/extract_pins 0.3, primaryclaude-haiku-5-5(text), consensusclaude-sonnet-5-5(agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish. - CAD: KiCad official libraries (CC-BY-SA 4.0).
# FDC86244-HF
**KEXIN** · MOSFETs · SOT-23-6
FDC86244-HF from KEXIN, in a SOT-23-6. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.
## Pinout
| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | D | passive | Drain terminal of the N-channel MOSFET, rated for VDS = 150 V with ID = 2.3 A at VGS = 10 V. |
| 2 | D | passive | Drain terminal of the N-channel MOSFET, rated for VDS = 150 V with ID = 2.3 A at VGS = 10 V. |
| 3 | G | passive | Gate terminal of the N-channel MOSFET, with gate-source voltage VGS rated at ±20 V. |
| 4 | S | passive | Source terminal of the N-channel MOSFET, the reference for the gate-source voltage VGS rated at ±20 V. |
| 5 | D | passive | Drain terminal of the N-channel MOSFET, rated for VDS = 150 V with ID = 2.3 A at VGS = 10 V. |
| 6 | D | passive | Drain terminal of the N-channel MOSFET, rated for VDS = 150 V with ID = 2.3 A at VGS = 10 V. |
## Key specifications
| Parameter | Value |
|---|---|
| Manufacturer | KEXIN |
| Package | SOT-23-6 |
| Category | Transistors/Thyristors |
| Pins | 6 |
## Electrical characteristics
Limits as printed in the datasheet (page.json `metadata.characteristics` carries them as data).
| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Drain-Source Voltage | VDS | | | 150 | V | Ta = 25°C | 1 |
| Gate-Source Voltage | VGS | -20 | | 20 | V | Ta = 25°C | 1 |
| Continuous Drain Current | ID | | | 2.3 | A | Ta = 25°C | 1 |
| Pulsed Drain Current | IDM | | | 10 | A | Ta = 25°C | 1 |
| Power Dissipation | PD | | | 1.6 | W | Note 1: 1 in² pad of 2 oz copper | 1 |
| Power Dissipation | PD | | | 0.8 | W | Note 2: minimum pad of 2 oz copper | 1 |
| Single Pulse Avalanche Energy | EAS | | | 12 | mJ | Note 3: Starting TJ=25°C, L=1.0 mH, IAS=5.0 A, VDD=135 V, VGS=10 V | 1 |
| Junction Temperature | TJ | | | 150 | °C | | 1 |
| Storage Temperature Range | Tstg | -55 | | 150 | °C | | 1 |
| Thermal Resistance Junction-to-Ambient | RthJA | | | 78 | °C/W | Note 1: 1 in² pad of 2 oz copper | 1 |
| Thermal Resistance Junction-to-Case | RthJC | | | 30 | °C/W | | 1 |
| Drain-Source Breakdown Voltage | VDSS | 150 | | | V | ID=250µA, VGS=0V | 2 |
| Zero Gate Voltage Drain Current | IDSS | | | 1 | µA | VDS=120V, VGS=0V | 2 |
| Gate-Body Leakage Current | IGSS | -100 | | 100 | nA | VDS=0V, VGS=±20V | 2 |
| Gate Threshold Voltage | VGS(th) | 2 | | 4 | V | VDS=VGS, ID=250µA | 2 |
| Static Drain-Source On-Resistance | RDS(On) | | | 144 | mΩ | VGS=10V, ID=2.3A | 2 |
| Static Drain-Source On-Resistance | RDS(On) | | | 273 | mΩ | VGS=10V, ID=2.3A, TJ=125°C | 2 |
| Static Drain-Source On-Resistance | RDS(On) | | | 188 | mΩ | VGS=6V, ID=1.9A | 2 |
| Input Capacitance | Ciss | | 260 | 345 | pF | VGS=0V, VDS=75V, f=1MHz | 2 |
| Output Capacitance | Coss | | 32 | 45 | pF | VGS=0V, VDS=75V, f=1MHz | 2 |
| Reverse Transfer Capacitance | Crss | | 1.7 | 5 | pF | VGS=0V, VDS=75V, f=1MHz | 2 |
| Total Gate Charge | Qg | | 4.2 | 6 | nC | VGS=0 to 10V, VDS=75V, ID=2.3A | 2 |
| Total Gate Charge | Qg | | 2.4 | 4 | nC | VGS=0 to 5V, VDS=75V, ID=2.3A | 2 |
| Turn-On Delay Time | td(on) | | 4.7 | 10 | ns | VDD=75V, ID=2.3A, VGS=10V, RGEN=6Ω | 2 |
| Turn-On Rise Time | tr | | 1.4 | 10 | ns | VDD=75V, ID=2.3A, VGS=10V, RGEN=6Ω | 2 |
| Turn-Off Delay Time | td(off) | | 10 | 20 | ns | VDD=75V, ID=2.3A, VGS=10V, RGEN=6Ω | 2 |
| Turn-Off Fall Time | tf | | 3.1 | 10 | ns | VDD=75V, ID=2.3A, VGS=10V, RGEN=6Ω | 2 |
| Body Diode Reverse Recovery Time | trr | | 45 | 73 | ns | IF=2.3A, dI/dt=100A/µs | 2 |
| Body Diode Reverse Recovery Charge | Qrr | | 33 | 53 | nC | IF=2.3A, dI/dt=100A/µs | 2 |
| Maximum Body-Diode Continuous Current | IS | | | 2.3 | A | | 2 |
| Diode Forward Voltage | VSD | | | 1.3 | V | IS=2.3A, VGS=0V | 2 |
## CAD (KiCad official)
- Symbol: `FDC86244-HF`
- Footprint: `Package_TO_SOT_SMD:SOT-23-6`
- 3D model: SOT-23-6 (KiCad packages3D, STEP)
- 3D model files: `fdc86244-hf-etched.step` / `fdc86244-hf-etched.glb` carry the MPN laser-etched on the die in a toggleable `Adom.LaserEtch` group (Fusion-ready); `fdc86244-hf.step` / `fdc86244-hf.glb` are the bare package body.
## Provenance
Data extracted from the manufacturer datasheet, not a distributor listing:
- **Datasheet:** [KEXIN datasheet](https://jlcpcb.com/api/file/downloadByFileSystemAccessId/8590166540512223232) (5 pp, sha256 `3a42c0a1c264461d`, retrieved 2026-10-17, tier: lcsc)
- **Extractor:** parts-factory `2.0.0` / `extract_pins 0.3`, primary `claude-haiku-5-5` (text), consensus `claude-sonnet-5-5` (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
- **CAD:** KiCad official libraries (CC-BY-SA 4.0).
[Datasheet PDF](docs/fdc86244-hf-datasheet.pdf)