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FDC8602

Public Made by Adom

by adom

onsemi MOSFETs, TSOT-23-6. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.

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FDC8602

onsemi · MOSFETs · TSOT-23-6

FDC8602 from onsemi, in a TSOT-23-6. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

Pinout

Pin Name Type Function
1 G1 input Gate of MOSFET 1 (Q1), with a maximum gate-to-source voltage of ±20 V.
2 S2 passive Source of MOSFET 2 (Q2), carrying up to 1.2 A continuous drain current.
3 G2 input Gate of MOSFET 2 (Q2), with a maximum gate-to-source voltage of ±20 V.
4 D2 passive Drain of MOSFET 2 (Q2), rated for 100 V drain-to-source and 1.2 A continuous current.
5 S1 passive Source of MOSFET 1 (Q1), carrying up to 1.2 A continuous drain current.
6 D1 passive Drain of MOSFET 1 (Q1), rated for 100 V drain-to-source and 1.2 A continuous current.

Key specifications

Parameter Value
Manufacturer onsemi
Package TSOT-23-6
Category Triode/MOS Tube/Transistor
Pins 6

Electrical characteristics

Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).

Parameter Symbol Min Typ Max Unit Conditions Page
Drain to Source Voltage VDS 100 V 2
Gate to Source Voltage VGS -20 20 V 2
Drain Current Continuous ID 1.2 A Note 1a 2
Drain Current Pulsed ID 5 A 2
Single Pulse Avalanche Energy EAS 1.5 mJ Note 3 2
Power Dissipation PD 0.96 W Note 1a 2
Power Dissipation PD 0.69 W Note 1b 2
Operating and Storage Junction Temperature Range TJ, TSTG -55 150 °C 2
Thermal Resistance, Junction to Case RθJC 60 °C/W 2
Thermal Resistance, Junction to Ambient RθJA 130 °C/W Note 1a 2
Drain to Source Breakdown Voltage BVDSS 100 V ID = 250 μA, VGS = 0 V 3
Zero Gate Voltage Drain Current IDSS 1 μA VDS = 80 V, VGS = 0 V 3
Gate to Source Leakage Current IGSS -100 100 nA VGS = ±20 V, VDS = 0 V 3
Gate to Source Threshold Voltage VGS(th) 2 3.2 4 V VGS = VDS, ID = 250 μA 3
Static Drain to Source On Resistance rDS(on) 285 350 mΩ VGS = 10 V, ID = 1.2 A 3
Static Drain to Source On Resistance rDS(on) 409 575 mΩ VGS = 6 V, ID = 0.9 A 3
Static Drain to Source On Resistance rDS(on) 489 600 mΩ VGS = 10 V, ID = 1.2 A, TJ = 125 °C 3
Input Capacitance Ciss 53 70 pF VDS = 50 V, VGS = 0 V, f = 1MHz 3
Output Capacitance Coss 17 25 pF VDS = 50 V, VGS = 0 V, f = 1MHz 3
Reverse Transfer Capacitance Crss 0.8 5 pF VDS = 50 V, VGS = 0 V, f = 1MHz 3
Turn-On Delay Time td(on) 3.5 10 ns VDD = 50 V, ID = 1.2 A, VGS = 10 V, RGEN = 6 Ω 3
Rise Time tr 1.7 10 ns VDD = 50 V, ID = 1.2 A, VGS = 10 V, RGEN = 6 Ω 3
Turn-Off Delay Time td(off) 5.4 11 ns VDD = 50 V, ID = 1.2 A, VGS = 10 V, RGEN = 6 Ω 3
Fall Time tf 2.3 10 ns VDD = 50 V, ID = 1.2 A, VGS = 10 V, RGEN = 6 Ω 3
Total Gate Charge Qg(TOT) 1.2 2 nC VGS = 0 V to 10 V, VDD = 50 V, ID = 1.2 A 3
Total Gate Charge Qg(TOT) 0.6 1 nC VGS = 0 V to 5 V, VDD = 50 V, ID = 1.2 A 3
Source-Drain Diode Forward Voltage VSD 0.86 1.3 V VGS = 0 V, IS = 1.2 A (Note 2) 3
Reverse Recovery Time trr 27 43 ns IF = 1.2 A, di/dt = 100 A/μs 3
Reverse Recovery Charge Qrr 12 21 nC 3

CAD (KiCad official)

  • Symbol: FDC8602
  • Footprint: Package_TO_SOT_SMD:TSOT-23-6
  • 3D model: TSOT-23-6 (KiCad packages3D, STEP)
  • 3D model files: fdc8602-etched.step / fdc8602-etched.glb carry the MPN laser-etched on the die in a toggleable Adom.LaserEtch group (Fusion-ready); fdc8602.step / fdc8602.glb are the bare package body.

Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

  • Datasheet: onsemi datasheet (9 pp, sha256 66b19f148295b14d, retrieved 2026-10-28, tier: manufacturer)
  • Extractor: parts-factory 2.0.0 / extract_pins 0.3, primary claude-haiku-5-5 (text), consensus claude-sonnet-5-5 (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
  • CAD: KiCad official libraries (CC-BY-SA 4.0).

Datasheet PDF