component
FDC855N-VB
Public Made by Adomby adom
VBsemi Elec MOSFETs, TSOP-6. Pinout extracted from the datasheet, KiCad symbol/footprint/3D.
← Commit history
page.json+6−3@@ -32,7 +32,7 @@ "number": "1", "name": "D", "type": "passive",- "description": "Drain terminal of the N-channel MOSFET. Tied internally to pins 2, 5, and 6 for improved current handling and thermal dissipation. Rated VDS = 30 V, ID = 6 A (TC = 25 \u00b0C)."+ "description": "Drain terminal of the N-channel MOSFET. Tied internally to pins 2, 5, and 6 for improved current handling and thermal dissipation. Rated VDS = 30 V, ID = 6 A (TC = 25 °C)." }, { "number": "2",@@ -44,7 +44,7 @@ "number": "3", "name": "G", "type": "input",- "description": "Gate terminal. VGS absolute maximum \u00b1 20 V; typical gate-source threshold VGS(th) = 0.5 V to 1.5 V at ID = 250 \u00b5A. Gate resistance Rg typ. 2.5 \u03a9."+ "description": "Gate terminal. VGS absolute maximum ± 20 V; typical gate-source threshold VGS(th) = 0.5 V to 1.5 V at ID = 250 µA. Gate resistance Rg typ. 2.5 Ω." }, { "number": "4",@@ -132,5 +132,8 @@ "docs/fdc855n-vb-datasheet.pdf", "viewers/symbol.html", "viewers/footprint.html"- ]+ ],+ "visibility": {+ "public": true+ } }