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FDC658AP

TECH PUBLIC · MOSFETs · SOT-23-6

FDC658AP from TECH PUBLIC, in a SOT-23-6. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

Pinout

Pin Name Type Function
1 D passive Drain, P-channel MOSFET drain (pin-1 side, top left), rated VDS -30 V and continuous ID -4.1 A.
2 D passive Drain, P-channel MOSFET drain (left middle), rated VDS -30 V and continuous ID -4.1 A.
3 G input Gate, rated VGS ±20 V with gate threshold voltage of -1 V min to -3 V max at ID = -250 µA.
4 S passive Source, P-channel MOSFET source (bottom right), with diode forward voltage max -1 V at IS = -1 A.
5 D passive Drain, P-channel MOSFET drain (right middle), rated VDS -30 V and continuous ID -4.1 A.
6 D passive Drain, P-channel MOSFET drain (right top), rated VDS -30 V and continuous ID -4.1 A.

Key specifications

Parameter Value
Manufacturer TECH PUBLIC
Package SOT-23-6
Category Transistors/Thyristors
Pins 6

CAD (KiCad official)

  • Symbol: FDC658AP
  • Footprint: Package_TO_SOT_SMD:SOT-23-6
  • 3D model: SOT-23-6 (KiCad packages3D, STEP)
  • 3D model files: fdc658ap-etched.step / fdc658ap-etched.glb carry the MPN laser-etched on the die in a toggleable Adom.LaserEtch group (Fusion-ready); fdc658ap.step / fdc658ap.glb are the bare package body.

Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

  • Datasheet: TECH PUBLIC datasheet (4 pp, sha256 bb3a6e162c3a6aeb, retrieved 2026-10-09, tier: lcsc)
  • Extractor: parts-factory 2.0.0 / extract_pins 0.3, primary claude-sonnet-5-5 (vision), consensus claude-opus-5-5 (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
  • CAD: KiCad official libraries (CC-BY-SA 4.0).

Datasheet PDF