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FDC658AP-VB

Public Made by Adom

by adom

VBsemi Elec MOSFETs, TSOP-6. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.

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FDC658AP-VB

VBsemi Elec · MOSFETs · TSOP-6

FDC658AP-VB from VBsemi Elec, in a TSOP-6. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

Pinout

Pin Name Type Function
1 D passive Drain terminal of the P-channel MOSFET, grouped with pins 2, 5 and 6 as drain in the datasheet pin listing.
2 D passive Drain terminal of the P-channel MOSFET, grouped with pins 1, 5 and 6 as drain in the datasheet pin listing.
3 G input Gate terminal of the P-channel MOSFET, which controls the drain-source channel.
4 S passive Source terminal of the P-channel MOSFET.
5 D passive Drain terminal of the P-channel MOSFET, grouped with pins 1, 2 and 6 as drain in the datasheet pin listing.
6 D passive Drain terminal of the P-channel MOSFET, grouped with pins 1, 2 and 5 as drain in the datasheet pin listing.

Key specifications

Parameter Value
Manufacturer VBsemi Elec
Package TSOP-6
Category Transistors
Pins 6

Electrical characteristics

Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).

Parameter Symbol Min Typ Max Unit Conditions Page
Drain-Source Voltage VDS -30 V 1
Gate-Source Voltage VGS -20 20 V 1
Continuous Drain Current ID -4.8 A TC = 25 °C (TJ = 150 °C) 1
Continuous Drain Current ID -4.1 A TC = 70 °C 1
Continuous Drain Current ID -4 A TA = 25 °C 1
Continuous Drain Current ID -3.5 A TA = 70 °C 1
Pulsed Drain Current IDM -20 A 1
Continuous Source-Drain Diode Current IS -2.5 A TC = 25 °C 1
Continuous Source-Drain Diode Current IS -1.67 A TA = 25 °C 1
Maximum Power Dissipation PD 3 W TC = 25 °C 1
Maximum Power Dissipation PD 2 W TC = 70 °C 1
Maximum Power Dissipation PD 1.3 W TA = 70 °C 1
Operating Junction and Storage Temperature Range TJ, Tstg -55 150 °C 1
Maximum Junction-to-Ambient RthJA 55 62.5 °C/W t ≤ 5 s 1
Maximum Junction-to-Foot (Drain) RthJF 34 41 °C/W Steady State 1
Maximum Junction-to-Ambient RthJA 110 °C/W Steady State (note d) 1
Drain-Source Breakdown Voltage VDS -30 V VGS = 0 V, ID = -250 µA 2
Gate-Source Threshold Voltage VGS(th) -0.5 -2 V VDS = VGS, ID = -250 µA 2
Gate-Source Leakage IGSS -100 100 nA VDS = 0 V, VGS = ±20 V 2
Zero Gate Voltage Drain Current IDSS -1 µA VDS = -30 V, VGS = 0 V 2
Zero Gate Voltage Drain Current IDSS -10 µA VDS = -30 V, VGS = 0 V, TJ = 55 °C 2
On-State Drain Current ID(on) -20 A VDS ≤ -5 V, VGS = -10 V 2
Drain-Source On-State Resistance RDS(on) 0.049 Ω VGS = -10 V, ID = -4.1 A 2
Drain-Source On-State Resistance RDS(on) 0.054 Ω VGS = -4.5 V, ID = -1.0 A 2
Total Gate Charge Qg 10 15 nC VDS = -15 V, VGS = -10 V, ID = -4.1 A 2
Total Gate Charge Qg 5.1 8 nC VDS = -15 V, VGS = -4.5 V, ID = -4.1 A 2
Turn-On Delay Time td(on) 40 60 ns VDD = -15 V, RL = 4.6 Ω, ID ≅ -3.3 A, VGEN = -4.5 V, Rg = 1 Ω 2
Rise Time tr 80 120 ns VDD = -15 V, RL = 4.6 Ω, ID ≅ -3.3 A, VGEN = -4.5 V, Rg = 1 Ω 2
Turn-Off Delay Time td(off) 20 30 ns VDD = -15 V, RL = 4.6 Ω, ID ≅ -3.3 A, VGEN = -4.5 V, Rg = 1 Ω 2
Fall Time tf 12 20 ns VDD = -15 V, RL = 4.6 Ω, ID ≅ -3.3 A, VGEN = -4.5 V, Rg = 1 Ω 2
Turn-On Delay Time td(on) 5 10 ns VDD = -15 V, RL = 4.6 Ω, ID ≅ -3.3 A, VGEN = -10 V, Rg = 1 Ω 2
Rise Time tr 13 20 ns VDD = -15 V, RL = 4.6 Ω, ID ≅ -3.3 A, VGEN = -10 V, Rg = 1 Ω 2
Fall Time tf 10 15 ns VDD = -15 V, RL = 4.6 Ω, ID ≅ -3.3 A, VGEN = -10 V, Rg = 1 Ω 2
Body Diode Voltage VSD -0.8 -1.2 V IS = -3.3 A 2
Body Diode Reverse Recovery Time trr 20 30 ns IF = -3.3 A, di/dt = 100 A/µs, TJ = 25 °C 2
Body Diode Reverse Recovery Charge Qrr 20 30 nC IF = -3.3 A, di/dt = 100 A/µs, TJ = 25 °C 2
VDS Temperature Coefficient ΔVDS/TJ -31 mV/°C ID = -250 µA 2
VGS(th) Temperature Coefficient ΔVGS(th)/TJ 4.5 mV/°C 2

CAD (KiCad official)

  • Symbol: FDC658AP-VB
  • Footprint: Package_SO:TSOP-6_1.65x3.05mm_P0.95mm
  • 3D model: TSOP-6 (KiCad packages3D, STEP)
  • 3D model files: fdc658ap-vb-etched.step / fdc658ap-vb-etched.glb carry the MPN laser-etched on the die in a toggleable Adom.LaserEtch group (Fusion-ready); fdc658ap-vb.step / fdc658ap-vb.glb are the bare package body.

Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

  • Datasheet: VBsemi Elec datasheet (9 pp, sha256 ab7ae19ecf7ec20c, retrieved 2026-10-27, tier: lcsc)
  • Extractor: parts-factory 2.0.0 / extract_pins 0.3, primary claude-haiku-5-5 (text), consensus off (skipped (clean text read)), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
  • CAD: KiCad official libraries (CC-BY-SA 4.0).

Datasheet PDF