component
FDC6561AN-VB
Public Made by Adomby adom
VBsemi Elec MOSFETs, TSOP-6. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.
Made with KiCad 10.0 · needs KiCad 10.0 or later to open · KiCad file format 20260206
| Name | Last updated |
|---|---|
| docs | 1d ago |
| viewers | 1d ago |
| fdc6561an-vb-etched.glb | 1d ago |
| fdc6561an-vb-etched.step | 1d ago |
| fdc6561an-vb-hero.glb | 1d ago |
| fdc6561an-vb-hero.overlay.json | 1d ago |
| fdc6561an-vb.glb | 1d ago |
| fdc6561an-vb.kicad_mod | 1d ago |
| fdc6561an-vb.kicad_sym | 1d ago |
| fdc6561an-vb.lbr | 1d ago |
| fdc6561an-vb.step | 1d ago |
| package.json | 1d ago |
| page.json | 1d ago |
| README.md | 1d ago |
| verification.json | 1d ago |
FDC6561AN-VB
VBsemi Elec · MOSFETs · TSOP-6
FDC6561AN-VB from VBsemi Elec, in a TSOP-6. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.
Pinout
| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | G1 | input | Gate of N-channel MOSFET 1, with an absolute maximum gate-source voltage of ±12 V and a threshold of 0.4 V min to 1.5 V max. |
| 2 | S2 | passive | Source of N-channel MOSFET 2, with a continuous drain current of 6.0 A at TC = 25 °C and a 20 V drain-source rating. |
| 3 | G2 | input | Gate of N-channel MOSFET 2, with an absolute maximum gate-source voltage of ±12 V and a threshold of 0.4 V min to 1.5 V max. |
| 4 | D2 | passive | Drain of N-channel MOSFET 2, with a 20 V drain-source voltage rating, 6.0 A continuous at TC = 25 °C and 18 A pulsed. |
| 5 | S1 | passive | Source of N-channel MOSFET 1, with a continuous drain current of 6.0 A at TC = 25 °C and a 20 V drain-source rating. |
| 6 | D1 | passive | Drain of N-channel MOSFET 1, with a 20 V drain-source voltage rating, 6.0 A continuous at TC = 25 °C and 18 A pulsed. |
Key specifications
| Parameter | Value |
|---|---|
| Manufacturer | VBsemi Elec |
| Package | TSOP-6 |
| Category | Transistors/Thyristors |
| Pins | 6 |
Electrical characteristics
Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).
| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Drain-Source Voltage | VDS | 20 | V | TA = 25 °C | 1 | ||
| Gate-Source Voltage | VGS | -12 | 12 | V | 1 | ||
| Continuous Drain Current | ID | 3.5 | A | TA = 25 °C | 1 | ||
| Continuous Drain Current | ID | 2.8 | A | TA = 70 °C | 1 | ||
| Continuous Drain Current | ID | 4 | A | TC = 70 °C | 1 | ||
| Continuous Drain Current | ID | 6 | A | TJ = 150 °C; TC = 25 °C | 1 | ||
| Pulsed Drain Current | IDM | 18 | A | 1 | |||
| Continuous Source-Drain Diode Current | IS | 1.17 | A | TC = 25 °C | 1 | ||
| Maximum Power Dissipation | PD | 1.6 | W | TC = 25 °C | 1 | ||
| Maximum Power Dissipation | PD | 1 | W | TC = 70 °C | 1 | ||
| Maximum Power Dissipation | PD | 1.14 | W | TA = 25 °C | 1 | ||
| Maximum Power Dissipation | PD | 0.73 | W | TA = 70 °C | 1 | ||
| Operating Junction and Storage Temperature Range | TJ, Tstg | -55 | 150 | °C | 1 | ||
| Soldering Recommendations (Peak Temperature) | 260 | °C | 1 | ||||
| Maximum Junction-to-Ambient | RthJA | 93 | 110 | °C/W | t ≤ 5 s | 1 | |
| Maximum Junction-to-Foot | RthJF | 75 | 90 | °C/W | Steady state | 1 | |
| Drain-Source Breakdown Voltage | VDS | 20 | V | VGS = 0 V, ID = 250 µA | 2 | ||
| Gate-Source Threshold Voltage | VGS(th) | 0.4 | 1.5 | V | VDS = VGS, ID = 250 µA | 2 | |
| Gate-Source Leakage | IGSS | -100 | 100 | nA | VDS = 0 V, VGS = ± 20 V | 2 | |
| Zero Gate Voltage Drain Current | IDSS | 1 | µA | VDS = 20 V, VGS = 0 V | 2 | ||
| Zero Gate Voltage Drain Current | IDSS | 10 | µA | VDS = 20 V, VGS = 0 V, TJ = 55 °C | 2 | ||
| On-State Drain Current | ID(on) | 10 | A | VDS ≥ 5 V, VGS = 10 V | 2 | ||
| Drain-Source On-State Resistance | RDS(on) | 0.0222 | Ω | VGS = 4.5 V, ID = 3.4 A | 2 | ||
| Drain-Source On-State Resistance | RDS(on) | 0.028 | Ω | VGS = 2.5 V, ID = 3.0 A | 2 | ||
| Gate Resistance | Rg | 1 | 5 | 10 | Ω | f = 1 MHz | 2 |
| Total Gate Charge | Qg | 3.7 | 6 | nC | VDS = 10 V, VGS = 10 V, ID = 3.4 A | 2 | |
| Total Gate Charge | Qg | 1.8 | 3 | nC | VDS = 10 V, VGS = 4.5 V, ID = 3.4 A | 2 | |
| Turn-On Delay Time | td(on) | 10 | 20 | ns | VDD = 10 V, RL = 5.6 Ω, ID ≅ 2.7 A, VGEN = 4.5 V, Rg = 1 Ω | 2 | |
| Rise Time | tr | 15 | 30 | ns | VDD = 10 V, RL = 5.6 Ω, ID ≅ 2.7 A, VGEN = 4.5 V, Rg = 1 Ω | 2 | |
| Turn-Off Delay Time | td(off) | 10 | 20 | ns | VDD = 10 V, RL = 5.6 Ω, ID ≅ 2.7 A, VGEN = 4.5 V, Rg = 1 Ω | 2 | |
| Fall Time | tf | 10 | 20 | ns | VDD = 10 V, RL = 5.6 Ω, ID ≅ 2.7 A, VGEN = 4.5 V, Rg = 1 Ω | 2 | |
| Turn-On Delay Time | td(on) | 5 | 10 | ns | VDD = 10 V, RL = 5.6 Ω, ID ≅ 2.7 A, VGEN = 10 V, Rg = 1 Ω | 2 | |
| Continuous Source-Drain Diode Current | IS | 1.2 | A | TC = 25 °C | 2 | ||
| Pulse Diode Forward Current | ISM | 18 | A | 2 | |||
| Body Diode Voltage | VSD | 0.85 | 1.2 | V | IS = 2.7 A, VGS = 0 V | 2 | |
| Body Diode Reverse Recovery Time | trr | 10 | 20 | ns | IF = 2.7 A, dI/dt = 100 A/µs, TJ = 25 °C | 2 | |
| Body Diode Reverse Recovery Charge | Qrr | 4 | 10 | nC | 2 |
CAD (KiCad official)
- Symbol:
FDC6561AN-VB - Footprint:
Package_SO:TSOP-6_1.65x3.05mm_P0.95mm - 3D model: TSOP-6 (KiCad packages3D, STEP)
- 3D model files:
fdc6561an-vb-etched.step/fdc6561an-vb-etched.glbcarry the MPN laser-etched on the die in a toggleableAdom.LaserEtchgroup (Fusion-ready);fdc6561an-vb.step/fdc6561an-vb.glbare the bare package body.
Provenance
Data extracted from the manufacturer datasheet, not a distributor listing:
- Datasheet: VBsemi Elec datasheet (9 pp, sha256
d4cd764314520ba9, retrieved 2026-11-05, tier: lcsc) - Extractor: parts-factory
2.0.0/extract_pins 0.3, primaryclaude-sonnet-5-5(text+vision), consensusclaude-opus-5-5(agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish. - CAD: KiCad official libraries (CC-BY-SA 4.0).