component
FDC634P
Public Made by Adomby adom
onsemi MOSFETs, TSOT-23-6. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.
3D Model
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Symbol & Footprint
Schematic Symbol
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PCB Footprint
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Datasheet
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README
markdownFDC634P
onsemi · MOSFETs · TSOT-23-6
FDC634P from onsemi, in a TSOT-23-6. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.
Pinout
| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | D | passive | Drain, one of four drain pins (1, 2, 5, 6) tied together; drain-source voltage rated -20 V. |
| 2 | D | passive | Drain, one of four drain pins (1, 2, 5, 6) tied together; continuous drain current -3.5 A. |
| 3 | G | input | Gate; gate-source voltage rated ±8 V, with RDS(ON) of 80 mΩ at VGS = -4.5 V and 110 mΩ at -2.5 V. |
| 4 | S | passive | Source of the P-channel MOSFET; continuous body-diode forward current is -1.3 A. |
| 5 | D | passive | Drain, one of four drain pins (1, 2, 5, 6) tied together; pulsed drain current -20 A. |
| 6 | D | passive | Drain, one of four drain pins (1, 2, 5, 6) tied together; the drain pins are the solder-mount thermal reference for RθJC. |
Key specifications
| Parameter | Value |
|---|---|
| Manufacturer | onsemi |
| Package | TSOT-23-6 |
| Category | Transistors/Thyristors |
| Pins | 6 |
Electrical characteristics
Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).
| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Drain-Source Breakdown Voltage | BVDSS | -20 | V | VGS = 0 V, ID = -250 μA | 3 | ||
| Zero Gate Voltage Drain Current | IDSS | -1 | μA | VDS = -16 V, VGS = 0 V | 3 | ||
| Gate-Body Leakage, Forward | IGSSF | 100 | nA | VGS = 8 V, VDS = 0 V | 3 | ||
| Gate-Body Leakage, Reverse | IGSSR | -100 | nA | VGS = -8 V, VDS = 0 V | 3 | ||
| Gate Threshold Voltage | VGS(th) | -0.4 | -0.8 | -1.5 | V | VDS = VGS, ID = -250 μA | 3 |
| Static Drain-Source On-Resistance | RDS(on) | 60 | 80 | mΩ | VGS = -4.5 V, ID = -3.5 A | 3 | |
| Static Drain-Source On-Resistance | RDS(on) | 82 | 110 | mΩ | VGS = -2.5 V, ID = -3.1 A | 3 | |
| Static Drain-Source On-Resistance | RDS(on) | 77 | 130 | mΩ | VGS = -4.5 V, ID = -3.5 A, TJ = 125°C | 3 | |
| On-State Drain Current | ID(on) | -10 | A | VGS = -4.5 V, VDS = -5 V | 3 | ||
| Forward Transconductance | gFS | 11 | S | VDS = -5 V, ID = -3.5 A | 3 | ||
| Total Gate Charge | Qg | 7.2 | 10 | nC | VDS = -10 V, ID = -3.5 A, VGS = -4.5 V | 3 | |
| Turn-On Delay Time | td(on) | 10 | 20 | ns | VDD = -10 V, ID = -1 A, VGS = -4.5 V, RGEN = 6 Ω | 3 | |
| Turn-On Rise Time | tr | 9 | 19 | ns | VDD = -10 V, ID = -1 A, VGS = -4.5 V, RGEN = 6 Ω | 3 | |
| Turn-Off Delay Time | td(off) | 27 | 43 | ns | VDD = -10 V, ID = -1 A, VGS = -4.5 V, RGEN = 6 Ω | 3 | |
| Turn-Off Fall Time | tf | 11 | 20 | ns | VDD = -10 V, ID = -1 A, VGS = -4.5 V, RGEN = 6 Ω | 3 | |
| Maximum Continuous Drain-Source Diode Forward Current | IS | -1.3 | A | 3 | |||
| Drain-Source Diode Forward Voltage | VSD | -0.8 | -1.2 | V | VGS = 0 V, IS = -1.3 A (Note 2) | 3 | |
| Breakdown Voltage Temperature Coefficient | ΔBVDSS/ΔTJ | -12 | mV/°C | ID = -250 μA, Referenced to 25°C | 3 | ||
| Gate Threshold Voltage Temperature Coefficient | ΔVGS(th)/ΔTJ | 3 | mV/°C | ID = -250 μA, Referenced to 25°C | 3 | ||
| Drain-Source Voltage | VDSS | -20 | V | 2 | |||
| Gate-Source Voltage | VGSS | -8 | 8 | V | 2 | ||
| Drain Current, Continuous | ID | -3.5 | A | Note 1a | 2 | ||
| Drain Current, Pulsed | ID | -20 | A | Pulsed | 2 | ||
| Maximum Power Dissipation | PD | 1.6 | W | Note 1a | 2 | ||
| Maximum Power Dissipation | PD | 0.8 | W | Note 1b | 2 | ||
| Operating and Storage Junction Temperature Range | TJ, TSTG | -55 | 150 | °C | 2 | ||
| Thermal Resistance, Junction-to-Ambient | RθJA | 78 | °C/W | Note 1a (mounted on 1 in² pad of 2 oz copper) | 2 | ||
| Thermal Resistance, Junction-to-Ambient | RθJA | 156 | °C/W | Note 1b (minimum pad of 2 oz copper) | 3 | ||
| Thermal Resistance, Junction-to-Case | RθJC | 30 | °C/W | Note 1 | 2 |
CAD (KiCad official)
- Symbol:
FDC634P - Footprint:
Package_TO_SOT_SMD:TSOT-23-6 - 3D model: TSOT-23-6 (KiCad packages3D, STEP)
- 3D model files:
fdc634p-etched.step/fdc634p-etched.glbcarry the MPN laser-etched on the die in a toggleableAdom.LaserEtchgroup (Fusion-ready);fdc634p.step/fdc634p.glbare the bare package body.
Provenance
Data extracted from the manufacturer datasheet, not a distributor listing:
- Datasheet: onsemi datasheet (7 pp, sha256
cc70bf4f827d3709, retrieved 2026-10-18, tier: lcsc) - Extractor: parts-factory
2.0.0/extract_pins 0.3, primaryclaude-sonnet-5-5(text+vision), consensusclaude-opus-5-5(agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish. - CAD: KiCad official libraries (CC-BY-SA 4.0).