FDC6308P-VB

{
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  "type": "component",
  "slug": "fdc6308p-vb",
  "title": "FDC6308P-VB",
  "brief": "VBsemi Elec MOSFETs, TSOP-6. Pinout extracted from the datasheet, KiCad symbol/footprint/3D.",
  "version": "0.1.0",
  "license": "CC-BY-SA-4.0",
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  "component": {
    "mpn": "FDC6308P-VB",
    "manufacturer": "VBsemi Elec",
    "package": "TSOP-6",
    "pin_count": 6,
    "category": "Transistors/Thyristors",
    "subcategory": "MOSFETs",
    "datasheet": "https://jlcpcb.com/api/file/downloadByFileSystemAccessId/8603371472748896256",
    "parts": {
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      "footprint": "fdc6308p-vb.kicad_mod",
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      "model_3d_step": "fdc6308p-vb-etched.step",
      "model_3d_step_plain": "fdc6308p-vb.step",
      "lbr": "fdc6308p-vb.lbr"
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    "distributor_links": {},
    "pins": [
      {
        "number": "1",
        "name": "G1",
        "type": "input",
        "description": "Gate of MOSFET 1. Gate-source threshold VGS(th) = -0.5 to -2.0 V; drive with VGS = -4.5 V for full enhancement (RDS(on) = 0.075 Ω). Absolute max VGS = ±12 V."
      },
      {
        "number": "2",
        "name": "S2",
        "type": "passive",
        "description": "Source of MOSFET 2. Typically tied to the more positive supply node for a high-side P-channel load switch. Continuous source-drain diode current IS = -1.17 A."
      },
      {
        "number": "3",
        "name": "G2",
        "type": "input",
        "description": "Gate of MOSFET 2. Gate-source threshold VGS(th) = -0.5 to -2.0 V; drive with VGS = -4.5 V for full enhancement (RDS(on) = 0.075 Ω). Absolute max VGS = ±12 V."
      },
      {
        "number": "4",
        "name": "D2",
        "type": "passive",
        "description": "Drain of MOSFET 2. VDS = -20 V max. Continuous drain current ID = -4.0 A at TC = 25 °C; pulsed IDM = -12 A. Body diode connects D2 (anode) to S2 (cathode)."
      },
      {
        "number": "5",
        "name": "S1",
        "type": "passive",
        "description": "Source of MOSFET 1. Typically tied to the more positive supply node for a high-side P-channel load switch. Continuous source-drain diode current IS = -1.17 A."
      },
      {
        "number": "6",
        "name": "D1",
        "type": "passive",
        "description": "Drain of MOSFET 1. VDS = -20 V max. Continuous drain current ID = -4.0 A at TC = 25 °C; pulsed IDM = -12 A. Body diode connects D1 (anode) to S1 (cathode)."
      }
    ],
    "provenance": {
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        "sha256": "cc937a767022212f",
        "source_tier": "lcsc"
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      "cad": "KiCad official (CC-BY-SA 4.0)",
      "pins": {
        "total": 6,
        "described": 6,
        "cites_pages": true,
        "refuses_to_fabricate": true
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        "seat": "z = 0",
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        "zmin_mm": -0.0,
        "centre_offset_mm": 0.0,
        "footprint_binding": "identity",
        "sha256": "1c9b13e7787bad69d987f81501759be5faaee754f4ad55aa7da0fc2259cdb0ff",
        "checked": "2026-10-07",
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      {
        "file": "fdc6308p-vb-etched.step",
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    ]
  },
  "metadata": {
    "specs": {
      "Manufacturer": "VBsemi Elec",
      "Package": "TSOP-6",
      "Category": "Transistors/Thyristors",
      "Pins": "6"
    }
  },
  "variants": [
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      "mpn": "FDC6308P-VB",
      "kind": "packaging"
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  "discovery_pitch": "FDC6308P-VB (VBsemi Elec) component page with datasheet-verified CAD.",
  "author": {
    "name": "Ray",
    "email": "[email protected]"
  },
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  "updated_at": "2026-09-24T20:32:58.097Z"
}