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FDC6305N-VB

Public Made by Adom

by adom

VBsemi Elec MOSFETs, TSOP-6. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.

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FDC6305N-VB

VBsemi Elec · MOSFETs · TSOP-6

FDC6305N-VB from VBsemi Elec, in a TSOP-6. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

Pinout

Pin Name Type Function
1 G1 input Gate of N-channel MOSFET 1; gate-source voltage limited to ±12 V.
2 S2 passive Source of N-channel MOSFET 2 as labelled on the package top view.
3 G2 input Gate of N-channel MOSFET 2; gate-source voltage limited to ±12 V.
4 D2 passive Drain of N-channel MOSFET 2; drain-source voltage rated 20 V.
5 S1 passive Source of N-channel MOSFET 1 as labelled on the package top view.
6 D1 passive Drain of N-channel MOSFET 1; drain-source voltage rated 20 V.

Key specifications

Parameter Value
Manufacturer VBsemi Elec
Package TSOP-6
Category Transistors/Thyristors
Pins 6

Electrical characteristics

Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).

Parameter Symbol Min Typ Max Unit Conditions Page
Drain-Source Voltage VDS 20 V 1
Gate-Source Voltage VGS -12 12 V 1
Continuous Drain Current ID 6 A TC = 25 °C 1
Continuous Drain Current ID 4 A TC = 70 °C 1
Continuous Drain Current ID 3.5 A TA = 25 °C, surface mounted, t = 5 s (notes b, c) 1
Continuous Drain Current ID 2.8 A TA = 70 °C (notes b, c) 1
Pulsed Drain Current IDM 18 A 1
Continuous Source-Drain Diode Current IS 1.17 A TC = 25 °C 1
Continuous Source-Drain Diode Current IS 0.95 A TA = 25 °C (notes b, c) 1
Maximum Power Dissipation PD 1.6 W TC = 25 °C 1
Maximum Power Dissipation PD 1 W TC = 70 °C 1
Maximum Power Dissipation PD 1.14 W TA = 25 °C (notes b, c) 1
Maximum Power Dissipation PD 0.73 W TA = 70 °C (notes b, c) 1
Operating Junction and Storage Temperature Range TJ, Tstg -55 150 °C 1
Soldering Recommendations (Peak Temperature) 260 °C notes d, e 1
Drain-Source Breakdown Voltage VDS 20 V VGS = 0 V, ID = 250 µA 2
Gate-Source Threshold Voltage VGS(th) 0.4 1.5 V VDS = VGS, ID = 250 µA 2
Gate-Source Leakage IGSS -100 100 nA VDS = 0 V, VGS = ±20 V 2
Zero Gate Voltage Drain Current IDSS 1 µA VDS = 20 V, VGS = 0 V 2
Zero Gate Voltage Drain Current IDSS 10 µA VDS = 20 V, VGS = 0 V, TJ = 55 °C 2
On-State Drain Current ID(on) 10 A VDS ≥ 5 V, VGS = 10 V 2
Drain-Source On-State Resistance RDS(on) 0.0222 Ω VGS = 4.5 V, ID = 3.4 A 2
Drain-Source On-State Resistance RDS(on) 0.028 Ω VGS = 2.5 V, ID = 3.0 A 2
Gate Resistance Rg 1 5 10 Ω f = 1 MHz 2
Total Gate Charge Qg 3.7 6 nC VDS = 10 V, VGS = 10 V, ID = 3.4 A 2
Total Gate Charge Qg 1.8 3 nC VDS = 10 V, VGS = 4.5 V, ID = 3.4 A 2
Turn-On Delay Time td(on) 10 20 ns VDD = 10 V, RL = 5.6 Ω, ID ≅ 2.7 A, VGEN = 4.5 V, Rg = 1 Ω 2
Rise Time tr 15 30 ns VDD = 10 V, RL = 5.6 Ω, ID ≅ 2.7 A, VGEN = 4.5 V, Rg = 1 Ω 2
Turn-Off Delay Time td(off) 10 20 ns VDD = 10 V, RL = 5.6 Ω, ID ≅ 2.7 A, VGEN = 4.5 V, Rg = 1 Ω 2
Fall Time tf 10 20 ns VDD = 10 V, RL = 5.6 Ω, ID ≅ 2.7 A, VGEN = 4.5 V, Rg = 1 Ω 2
Turn-On Delay Time td(on) 5 10 ns VDD = 10 V, RL = 5.6 Ω, ID ≅ 2.7 A, VGEN = 10 V, Rg = 1 Ω 2
Body Diode Voltage VSD 0.85 1.2 V IS = 2.7 A, VGS = 0 V 2
Body Diode Reverse Recovery Time trr 10 20 ns IF = 2.7 A, dI/dt = 100 A/µs, TJ = 25 °C 2
Body Diode Reverse Recovery Charge Qrr 4 10 nC IF = 2.7 A, dI/dt = 100 A/µs, TJ = 25 °C 2
Junction-to-Ambient Thermal Resistance RthJA 93 110 °C/W t ≤ 5 s 1
Junction-to-Foot Thermal Resistance RthJF 75 90 °C/W Steady state 1
VDS Temperature Coefficient ΔVDS/TJ 29 mV/°C ID = 250 µA 2
VGS(th) Temperature Coefficient ΔVGS(th)/TJ -4 mV/°C 2

CAD (KiCad official)

  • Symbol: FDC6305N-VB
  • Footprint: Package_SO:TSOP-6_1.65x3.05mm_P0.95mm
  • 3D model: TSOP-6 (KiCad packages3D, STEP)
  • 3D model files: fdc6305n-vb-etched.step / fdc6305n-vb-etched.glb carry the MPN laser-etched on the die in a toggleable Adom.LaserEtch group (Fusion-ready); fdc6305n-vb.step / fdc6305n-vb.glb are the bare package body.

Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

  • Datasheet: VBsemi Elec datasheet (9 pp, sha256 8dfb2685e5c7f0a3, retrieved 2026-10-18, tier: lcsc)
  • Extractor: parts-factory 2.0.0 / extract_pins 0.3, primary claude-sonnet-5-5 (text+vision), consensus claude-opus-5-5 (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
  • CAD: KiCad official libraries (CC-BY-SA 4.0).

Datasheet PDF