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Ray Publish 0.1.0 468f24c 7d ago

FDC606P-MS

MSKSEMI · MOSFETs · SOT-23-6

FDC606P-MS from MSKSEMI, in a SOT-23-6. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

Pinout

Pin Name Type Function
1 D passive Drain, tied internally with the other drain pins (2, 5, 6); VDS max -20V, continuous ID -4.5A at TA=25C.
2 D passive Drain, tied internally with the other drain pins (1, 5, 6); VDS max -20V, continuous ID -4.5A at TA=25C.
3 G input Gate of the P-channel MOSFET; VGS max ±12V, threshold VGS(th) -0.5V min to -1.1V max at ID=-250uA.
4 S passive Source of the P-channel MOSFET; continuous source current IS max -4.5A, RDS(ON) 40mΩ typ at VGS=-4.5V.
5 D passive Drain, tied internally with the other drain pins (1, 2, 6); pulsed drain current IDM max -18A.
6 D passive Drain, tied internally with the other drain pins (1, 2, 5); pulsed drain current IDM max -18A.

Key specifications

Parameter Value
Manufacturer MSKSEMI
Package SOT-23-6
Category Transistors/Thyristors
Pins 6

Electrical characteristics

Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).

Parameter Symbol Min Typ Max Unit Conditions Page
Drain-Source Voltage VDS -20 V 2
Gate-Source Voltage VGS -12 12 V 2
Drain Current, Continuous ID -4.5 A TA=25℃ 2
Drain Current, Continuous ID -3.2 A TA=70℃ 2
Drain Current, Pulsed IDM -18 A Pulsed, Note 1 2
Power Dissipation PD 1.56 W TA=25℃ 2
Power Dissipation, Derate above 25℃ PD 0.012 W/℃ Derate above 25℃ 2
Storage Temperature Range TSTG -55 150 ℃ 2
Operating Junction Temperature Range TJ -55 150 ℃ 2
Thermal Resistance Junction to ambient RθJA 80 ℃/W 2
Drain-Source Breakdown Voltage BVDSS -20 V VGS=0V, ID=-250uA 3
Drain-Source Leakage Current IDSS -1 uA VDS=-20V, VGS=0V, TJ=25℃ 3
Drain-Source Leakage Current IDSS -10 uA VDS=-16V, VGS=0V, TJ=125℃ 3
Gate-Source Leakage Current IGSS -100 100 nA VGS=±12V, VDS=0V 3
Static Drain-Source On-Resistance RDS(ON) 40 50 mΩ VGS=-4.5V, ID=-3A 3
Static Drain-Source On-Resistance RDS(ON) 50 70 mΩ VGS=-2.5V, ID=-2A 3
Gate Threshold Voltage VGS(th) -0.5 -0.65 -1.1 V VGS=VDS, ID=-250uA 3
Continuous Source Current IS -4.5 A VG=VD=0V, Force Current 3
Pulsed Source Current ISM -9 A 3
Diode Forward Voltage VSD -1.2 V VGS=0V, IS=-1A, TJ=25℃ 3

CAD (KiCad official)

  • Symbol: FDC606P-MS
  • Footprint: Package_TO_SOT_SMD:SOT-23-6
  • 3D model: SOT-23-6 (KiCad packages3D, STEP)
  • 3D model files: fdc606p-ms-etched.step / fdc606p-ms-etched.glb carry the MPN laser-etched on the die in a toggleable Adom.LaserEtch group (Fusion-ready); fdc606p-ms.step / fdc606p-ms.glb are the bare package body.

Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

  • Datasheet: MSKSEMI datasheet (7 pp, sha256 f28a55beaa4658d7, retrieved 2026-10-18, tier: lcsc)
  • Extractor: parts-factory 2.0.0 / extract_pins 0.3, primary claude-sonnet-5-5 (text+vision), consensus claude-opus-5-5 (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
  • CAD: KiCad official libraries (CC-BY-SA 4.0).

Datasheet PDF