component
FDC606P-MS
Public Made by Adomby adom
MSKSEMI MOSFETs, SOT-23-6. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.
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FDC606P-MS
MSKSEMI · MOSFETs · SOT-23-6
FDC606P-MS from MSKSEMI, in a SOT-23-6. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.
Pinout
| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | D | passive | Drain, tied internally with the other drain pins (2, 5, 6); VDS max -20V, continuous ID -4.5A at TA=25C. |
| 2 | D | passive | Drain, tied internally with the other drain pins (1, 5, 6); VDS max -20V, continuous ID -4.5A at TA=25C. |
| 3 | G | input | Gate of the P-channel MOSFET; VGS max ±12V, threshold VGS(th) -0.5V min to -1.1V max at ID=-250uA. |
| 4 | S | passive | Source of the P-channel MOSFET; continuous source current IS max -4.5A, RDS(ON) 40mΩ typ at VGS=-4.5V. |
| 5 | D | passive | Drain, tied internally with the other drain pins (1, 2, 6); pulsed drain current IDM max -18A. |
| 6 | D | passive | Drain, tied internally with the other drain pins (1, 2, 5); pulsed drain current IDM max -18A. |
Key specifications
| Parameter | Value |
|---|---|
| Manufacturer | MSKSEMI |
| Package | SOT-23-6 |
| Category | Transistors/Thyristors |
| Pins | 6 |
Electrical characteristics
Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).
| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Drain-Source Voltage | VDS | -20 | V | 2 | |||
| Gate-Source Voltage | VGS | -12 | 12 | V | 2 | ||
| Drain Current, Continuous | ID | -4.5 | A | TA=25℃ | 2 | ||
| Drain Current, Continuous | ID | -3.2 | A | TA=70℃ | 2 | ||
| Drain Current, Pulsed | IDM | -18 | A | Pulsed, Note 1 | 2 | ||
| Power Dissipation | PD | 1.56 | W | TA=25℃ | 2 | ||
| Power Dissipation, Derate above 25℃ | PD | 0.012 | W/℃ | Derate above 25℃ | 2 | ||
| Storage Temperature Range | TSTG | -55 | 150 | ℃ | 2 | ||
| Operating Junction Temperature Range | TJ | -55 | 150 | ℃ | 2 | ||
| Thermal Resistance Junction to ambient | RθJA | 80 | ℃/W | 2 | |||
| Drain-Source Breakdown Voltage | BVDSS | -20 | V | VGS=0V, ID=-250uA | 3 | ||
| Drain-Source Leakage Current | IDSS | -1 | uA | VDS=-20V, VGS=0V, TJ=25℃ | 3 | ||
| Drain-Source Leakage Current | IDSS | -10 | uA | VDS=-16V, VGS=0V, TJ=125℃ | 3 | ||
| Gate-Source Leakage Current | IGSS | -100 | 100 | nA | VGS=±12V, VDS=0V | 3 | |
| Static Drain-Source On-Resistance | RDS(ON) | 40 | 50 | mΩ | VGS=-4.5V, ID=-3A | 3 | |
| Static Drain-Source On-Resistance | RDS(ON) | 50 | 70 | mΩ | VGS=-2.5V, ID=-2A | 3 | |
| Gate Threshold Voltage | VGS(th) | -0.5 | -0.65 | -1.1 | V | VGS=VDS, ID=-250uA | 3 |
| Continuous Source Current | IS | -4.5 | A | VG=VD=0V, Force Current | 3 | ||
| Pulsed Source Current | ISM | -9 | A | 3 | |||
| Diode Forward Voltage | VSD | -1.2 | V | VGS=0V, IS=-1A, TJ=25℃ | 3 |
CAD (KiCad official)
- Symbol:
FDC606P-MS - Footprint:
Package_TO_SOT_SMD:SOT-23-6 - 3D model: SOT-23-6 (KiCad packages3D, STEP)
- 3D model files:
fdc606p-ms-etched.step/fdc606p-ms-etched.glbcarry the MPN laser-etched on the die in a toggleableAdom.LaserEtchgroup (Fusion-ready);fdc606p-ms.step/fdc606p-ms.glbare the bare package body.
Provenance
Data extracted from the manufacturer datasheet, not a distributor listing:
- Datasheet: MSKSEMI datasheet (7 pp, sha256
f28a55beaa4658d7, retrieved 2026-10-18, tier: lcsc) - Extractor: parts-factory
2.0.0/extract_pins 0.3, primaryclaude-sonnet-5-5(text+vision), consensusclaude-opus-5-5(agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish. - CAD: KiCad official libraries (CC-BY-SA 4.0).
# FDC606P-MS
**MSKSEMI** · MOSFETs · SOT-23-6
FDC606P-MS from MSKSEMI, in a SOT-23-6. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.
## Pinout
| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | D | passive | Drain, tied internally with the other drain pins (2, 5, 6); VDS max -20V, continuous ID -4.5A at TA=25C. |
| 2 | D | passive | Drain, tied internally with the other drain pins (1, 5, 6); VDS max -20V, continuous ID -4.5A at TA=25C. |
| 3 | G | input | Gate of the P-channel MOSFET; VGS max ±12V, threshold VGS(th) -0.5V min to -1.1V max at ID=-250uA. |
| 4 | S | passive | Source of the P-channel MOSFET; continuous source current IS max -4.5A, RDS(ON) 40mΩ typ at VGS=-4.5V. |
| 5 | D | passive | Drain, tied internally with the other drain pins (1, 2, 6); pulsed drain current IDM max -18A. |
| 6 | D | passive | Drain, tied internally with the other drain pins (1, 2, 5); pulsed drain current IDM max -18A. |
## Key specifications
| Parameter | Value |
|---|---|
| Manufacturer | MSKSEMI |
| Package | SOT-23-6 |
| Category | Transistors/Thyristors |
| Pins | 6 |
## Electrical characteristics
Limits as printed in the datasheet (page.json `metadata.characteristics` carries them as data).
| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Drain-Source Voltage | VDS | | | -20 | V | | 2 |
| Gate-Source Voltage | VGS | -12 | | 12 | V | | 2 |
| Drain Current, Continuous | ID | | | -4.5 | A | TA=25℃ | 2 |
| Drain Current, Continuous | ID | | | -3.2 | A | TA=70℃ | 2 |
| Drain Current, Pulsed | IDM | | | -18 | A | Pulsed, Note 1 | 2 |
| Power Dissipation | PD | | | 1.56 | W | TA=25℃ | 2 |
| Power Dissipation, Derate above 25℃ | PD | | | 0.012 | W/℃ | Derate above 25℃ | 2 |
| Storage Temperature Range | TSTG | -55 | | 150 | ℃ | | 2 |
| Operating Junction Temperature Range | TJ | -55 | | 150 | ℃ | | 2 |
| Thermal Resistance Junction to ambient | RθJA | | | 80 | ℃/W | | 2 |
| Drain-Source Breakdown Voltage | BVDSS | -20 | | | V | VGS=0V, ID=-250uA | 3 |
| Drain-Source Leakage Current | IDSS | | | -1 | uA | VDS=-20V, VGS=0V, TJ=25℃ | 3 |
| Drain-Source Leakage Current | IDSS | | | -10 | uA | VDS=-16V, VGS=0V, TJ=125℃ | 3 |
| Gate-Source Leakage Current | IGSS | -100 | | 100 | nA | VGS=±12V, VDS=0V | 3 |
| Static Drain-Source On-Resistance | RDS(ON) | | 40 | 50 | mΩ | VGS=-4.5V, ID=-3A | 3 |
| Static Drain-Source On-Resistance | RDS(ON) | | 50 | 70 | mΩ | VGS=-2.5V, ID=-2A | 3 |
| Gate Threshold Voltage | VGS(th) | -0.5 | -0.65 | -1.1 | V | VGS=VDS, ID=-250uA | 3 |
| Continuous Source Current | IS | | | -4.5 | A | VG=VD=0V, Force Current | 3 |
| Pulsed Source Current | ISM | | | -9 | A | | 3 |
| Diode Forward Voltage | VSD | | | -1.2 | V | VGS=0V, IS=-1A, TJ=25℃ | 3 |
## CAD (KiCad official)
- Symbol: `FDC606P-MS`
- Footprint: `Package_TO_SOT_SMD:SOT-23-6`
- 3D model: SOT-23-6 (KiCad packages3D, STEP)
- 3D model files: `fdc606p-ms-etched.step` / `fdc606p-ms-etched.glb` carry the MPN laser-etched on the die in a toggleable `Adom.LaserEtch` group (Fusion-ready); `fdc606p-ms.step` / `fdc606p-ms.glb` are the bare package body.
## Provenance
Data extracted from the manufacturer datasheet, not a distributor listing:
- **Datasheet:** [MSKSEMI datasheet](https://jlcpcb.com/api/file/downloadByFileSystemAccessId/8603103783190872064) (7 pp, sha256 `f28a55beaa4658d7`, retrieved 2026-10-18, tier: lcsc)
- **Extractor:** parts-factory `2.0.0` / `extract_pins 0.3`, primary `claude-sonnet-5-5` (text+vision), consensus `claude-opus-5-5` (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
- **CAD:** KiCad official libraries (CC-BY-SA 4.0).
[Datasheet PDF](docs/fdc606p-ms-datasheet.pdf)