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FDC3612-HF

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KEXIN MOSFETs, SOT-23-6. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.

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FDC3612-HF

KEXIN · MOSFETs · SOT-23-6

FDC3612-HF from KEXIN, in a SOT-23-6. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

Pinout

Pin Name Type Function
1 Drain passive Drain terminal of the N-channel MOSFET, rated for VDS = 100 V with continuous ID = 2.6 A at VGS = 10 V.
2 Drain passive Drain terminal of the N-channel MOSFET, rated for VDS = 100 V with continuous ID = 2.6 A at VGS = 10 V.
3 Gate input Gate terminal of the N-channel MOSFET; gate-source voltage is limited to ±20 V.
4 Source passive Source terminal of the N-channel MOSFET, serving as the reference for the ±20 V gate-source rating.
5 Drain passive Drain terminal of the N-channel MOSFET, rated for VDS = 100 V with continuous ID = 2.6 A at VGS = 10 V.
6 Drain passive Drain terminal of the N-channel MOSFET, rated for VDS = 100 V with continuous ID = 2.6 A at VGS = 10 V.

Key specifications

Parameter Value
Manufacturer KEXIN
Package SOT-23-6
Category Transistors/Thyristors
Pins 6

Electrical characteristics

Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).

Parameter Symbol Min Typ Max Unit Conditions Page
Drain-Source Voltage VDS 100 V 1
Gate-Source Voltage VGS -20 20 V 1
Continuous Drain Current ID 2.6 A Note.1 1
Pulsed Drain Current IDM 20 A 1
Drain-Source Avalanche Current IAR 2.6 A 1
Power Dissipation PD 1.6 W Note.1: 1 in² pad of 2oz copper on FR-4 1
Power Dissipation PD 0.8 W Note.2: minimum pad 1
Thermal Resistance, Junction-to-Ambient RθJA 78 °C/W Note.1: 1 in² pad of 2oz copper on FR-4 1
Thermal Resistance, Junction-to-Ambient RθJA 156 °C/W Note.2: minimum pad 1
Thermal Resistance, Junction-to-Case RθJC 30 °C/W 1
Junction Temperature TJ 150 ℃ 1
Storage Temperature Range Tstg -55 150 ℃ 1
Drain-Source Breakdown Voltage VDSS 100 V ID=250μA, VGS=0V 2
Zero Gate Voltage Drain Current IDSS 10 μA VDS=80V, VGS=0V 2
Gate-Body Leakage Current IGSS -100 100 nA VDS=0V, VGS=±20V 2
Gate Threshold Voltage VGS(th) 2 4 V VDS=VGS, ID=250μA 2
Static Drain-Source On-Resistance RDS(On) 125 mΩ VGS=10V, ID=2.6A 2
Static Drain-Source On-Resistance RDS(On) 240 mΩ VGS=10V, ID=2.6A, TJ=125℃ 2
Static Drain-Source On-Resistance RDS(On) 135 mΩ VGS=6V, ID=2.5A 2
On State Drain Current ID(ON) 10 A VGS=10V, VDS=5V 2
Total Gate Charge Qg 14 20 nC VGS=10V, VDS=50V, ID=2.6A (Note.1) 2
Turn-On Delay Time td(on) 6 11 ns VGS=10V, VDS=50V, ID=1A, RG=6Ω (Note.1) 2
Turn-On Rise Time tr 3.5 7 ns VGS=10V, VDS=50V, ID=1A, RG=6Ω (Note.1) 2
Turn-Off Delay Time td(off) 23 37 ns VGS=10V, VDS=50V, ID=1A, RG=6Ω (Note.1) 2
Turn-Off Fall Time tf 3.7 7.4 ns VGS=10V, VDS=50V, ID=1A, RG=6Ω (Note.1) 2
Maximum Body-Diode Continuous Current IS 1.3 A 2
Diode Forward Voltage VSD 1.2 V IS=1.3A, VGS=0V 2
Drain-Source Avalanche Energy WDSS 90 mJ Single Pulse, VDD=50V, ID=2.6A (Note.1) 2

CAD (KiCad official)

  • Symbol: FDC3612-HF
  • Footprint: Package_TO_SOT_SMD:SOT-23-6
  • 3D model: SOT-23-6 (KiCad packages3D, STEP)
  • 3D model files: fdc3612-hf-etched.step / fdc3612-hf-etched.glb carry the MPN laser-etched on the die in a toggleable Adom.LaserEtch group (Fusion-ready); fdc3612-hf.step / fdc3612-hf.glb are the bare package body.

Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

  • Datasheet: KEXIN datasheet (4 pp, sha256 150764722825c81e, retrieved 2026-10-18, tier: lcsc)
  • Extractor: parts-factory 2.0.0 / extract_pins 0.3, primary claude-haiku-5-5 (text), consensus claude-sonnet-5-5 (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
  • CAD: KiCad official libraries (CC-BY-SA 4.0).

Datasheet PDF