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Ray Publish 0.1.0 447485e 12d ago

FDB0630N1507L

Tokmas · MOSFETs · TO-263-7L

FDB0630N1507L from Tokmas, in a TO-263-7L. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

Pinout

Pin Name Type Function
1 G input Gate terminal of the N-channel enhancement MOSFET, with gate-source voltage limited to ±25 V at TC = 25 ℃.
2 Source (S) passive Source terminal of the N-channel MOSFET, serving as the reference for the ±25 V gate-source rating.
3 Source (S) passive Source terminal of the N-channel MOSFET, serving as the reference for the ±25 V gate-source rating.
4 D passive Drain terminal of the N-channel MOSFET, rated for a drain-source voltage of 150 V and a DC drain current of 220 A at TC = 25 ℃.
5 Source (S) passive Source terminal of the N-channel MOSFET, serving as the reference for the ±25 V gate-source rating.
6 Source (S) passive Source terminal of the N-channel MOSFET, serving as the reference for the ±25 V gate-source rating.
7 Source (S) passive Source terminal of the N-channel MOSFET, serving as the reference for the ±25 V gate-source rating.

Key specifications

Parameter Value
Manufacturer Tokmas
Package TO-263-7L
Category Triode/MOS Tube/Transistor
Pins 7

Electrical characteristics

Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).

Parameter Symbol Min Typ Max Unit Conditions Page
Drain-Source Voltage VDS 150 V TC = 25 ℃ 2
Gate-Source Voltage VGS -25 25 V TC = 25 ℃ 2
Drain Current (DC) ID 220 A TC = 25 ℃, VGS = 10 V 2
Drain Current (DC) ID 98 A TC = 100 ℃, VGS = 10 V 2
Drain Current (Pulsed) IDM 552 A TC = 25 ℃, VGS = 10 V 2
Drain power dissipation Ptot 250 W TC = 25 ℃ 2
Storage Temperature Tstg -55 175 ℃ 2
Junction Temperature TJ 175 ℃ 2
Continuous-Source Current IS 220 A TC = 25 ℃ 2
Single Pulsed Avalanche Current IAS 160 A VDD=100V , L=0.05mH 2
Single Pulsed Avalanche Energy EAS 1250 mJ VDD=100V , L=1.0mH 2
Thermal Resistance - Junction to Ambient RθJA 32 ℃/W 2
Thermal Resistance - Junction to Case RθJC 0.45 ℃/W 2
Drain-Source Breakdown Voltage BVDSS 150 V VGS = 0 V, IDS = 250 μA 3
Gate Threshold Voltage VGS(th) 2 4 V VDS = VGS, IDS = 250 μA 3
Drain Leakage Current IDSS 1 μA VDS = 120 V, VGS = 0 V 3
Gate Leakage Current IGSS -100 100 nA VGS = 0 V, VGS = ± 25 V 3
On-State Resistance RDS(ON)a 4.5 5 mΩ VGS = 10 V, IDS = 50 A 3
On-State Resistance RDS(ON)a 5 6 mΩ VGS = 6 V, IDS = 25 A 3
Diode Forward Voltage VSD 1.3 V ISD = 50 A, VGS = 0 V 3

CAD (KiCad official)

  • Symbol: FDB0630N1507L
  • Footprint: Package_TO_SOT_SMD:TO-263-7_TabPin4
  • 3D model: TO-263-7L (KiCad packages3D, STEP)
  • 3D model files: fdb0630n1507l-etched.step / fdb0630n1507l-etched.glb carry the MPN laser-etched on the die in a toggleable Adom.LaserEtch group (Fusion-ready); fdb0630n1507l.step / fdb0630n1507l.glb are the bare package body.

Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

  • Datasheet: Tokmas datasheet (7 pp, sha256 c750d72643fbd5a9, retrieved 2026-10-27, tier: lcsc)
  • Extractor: parts-factory 2.0.0 / extract_pins 0.3, primary claude-haiku-5-5 (text), consensus claude-sonnet-5-5 (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
  • CAD: KiCad official libraries (CC-BY-SA 4.0).

Datasheet PDF