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Ray Publish 0.1.0 c8d2961 7h ago

FDA38N30

onsemi · MOSFETs · TO-3PN

FDA38N30 from onsemi, in a TO-3PN. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

Pinout

Pin Name Type Function
1 G input Gate terminal; gate-to-source voltage is rated ±30 V (VGSS) and the gate threshold is 3.0 to 5.0 V at VDS = VGS, ID = 250 µA.
2 D passive Drain terminal; drain-to-source voltage is rated 300 V (VDSS) and continuous drain current is 38 A at TC = 25°C.
3 S passive Source terminal; maximum continuous body-diode forward current is 38 A (IS) and maximum pulsed current is 150 A (ISM).

Key specifications

Parameter Value
Manufacturer onsemi
Package TO-3PN
Category Transistors/Thyristors
Pins 3

Electrical characteristics

Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).

Parameter Symbol Min Typ Max Unit Conditions Page
Drain to Source Breakdown Voltage BVDSS 300 V ID = 250 μA, VGS = 0 V, TC = 25oC 3
Zero Gate Voltage Drain Current IDSS 1 μA VDS = 300 V, VGS = 0 V 3
Zero Gate Voltage Drain Current IDSS 10 μA VDS = 240 V, TC = 125oC 3
Gate-Body Leakage Current IGSS -100 100 nA VGS = ±30 V, VDS = 0 V 3
Gate Threshold Voltage VGS(th) 3 5 V VDS = VGS, ID = 250 μA 3
Static Drain-Source On-Resistance RDS(on) 0.07 0.085 Ω VGS = 10 V, ID = 19 A 3
Turn-On Delay Time td(on) 53 69 ns VDD = 150 V, ID = 38 A, RG = 25 Ω, VGS = 10 V 3
Turn-On Rise Time tr 110 143 ns VDD = 150 V, ID = 38 A, RG = 25 Ω, VGS = 10 V 3
Turn-Off Delay Time td(off) 118 153 ns VDD = 150 V, ID = 38 A, RG = 25 Ω, VGS = 10 V 3
Turn-Off Fall Time tf 54 70 ns VDD = 150 V, ID = 38 A, RG = 25 Ω, VGS = 10 V 3
Maximum Continuous Drain to Source Diode Forward Current IS 38 A 3
Maximum Pulsed Drain-Source Diode Forward Current ISM 150 A 3
Drain to Source Diode Forward Voltage VSD 1.4 V VGS = 0 V, ISD = 38 A 3
Drain to Source Voltage VDSS 300 V 2
Gate to Source Voltage VGSS -30 30 V 2
Drain Current - Continuous ID 38 A TC = 25oC 2
Drain Current - Continuous ID 22 A TC = 100oC 2
Drain Current - Pulsed IDM 150 A Note 1 2
Single Pulsed Avalanche Energy EAS 1200 mJ Note 2 2
Avalanche Current IAR 38 A Note 1 2
Repetitive Avalanche Energy EAR 31 mJ Note 1 2
Peak Diode Recovery dv/dt dv/dt 4.5 V/ns Note 3 2
Power Dissipation PD 312 W TC = 25oC 2
Operating and Storage Temperature Range TJ, TSTG -55 150 oC 2
Maximum Lead Temperature for Soldering TL 300 oC 1/8 in from case for 5 seconds 2
Thermal Resistance, Junction to Case, Max. RθJC 0.4 oC/W 2
Thermal Resistance, Junction to Ambient, Max. RθJA 40 oC/W 2

CAD (KiCad official)

  • Symbol: FDA38N30
  • Footprint: Package_TO_SOT_THT:TO-3P-3_Vertical
  • 3D model: TO-3PN (KiCad packages3D, STEP)
  • 3D model files: fda38n30-etched.step / fda38n30-etched.glb carry the MPN laser-etched on the die in a toggleable Adom.LaserEtch group (Fusion-ready); fda38n30.step / fda38n30.glb are the bare package body.

Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

  • Datasheet: onsemi datasheet (10 pp, sha256 e64be888e1897294, retrieved 2026-11-06, tier: lcsc)
  • Extractor: parts-factory 2.0.0 / extract_pins 0.3, primary claude-haiku-5-5 (text), consensus claude-sonnet-5-5 (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
  • CAD: KiCad official libraries (CC-BY-SA 4.0).

Datasheet PDF