component

FDA24N40F

Public Made by Adom

by adom

onsemi MOSFETs, TO-3PN. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.

componenttransistors-thyristorsfda24n40ffactory-2.0.0extractor-text

Verified FDA24N40F

by Ray · last 6 Nov 2026 · 1 record · files match
SymbolFootprint3D modelPins

Verification log 1 record

6 Nov 2026RayPublished by the parts factory: tier lcsc, 3 pinsfiles match
SymbolFootprint3D modelPinsfor all variants
  • ✓component-page-verify: PASS
  • ✓cad_props: Datasheet, MPN and distributor properties match page.json
  • ✓component: FDA24N40F · TO-3PN · 3 pins
  • ✓copper: 3 copper pads, none touching another net
  • ✓datasheet: all 3 pin names found in the 10-page datasheet
  • •distributor (warn): no ['digikey', 'mouser'] number
  • ✓family: TO-3P-3_Vertical
  • ✓files: 7 declared files present
  • ✓hero: docs/hero.png 4000x2500
  • ✓lbr: OK: /tmp/cpv-g0xj1pu8/x.lbr is a valid EAGLE .lbr with complete deviceset
  • ✓license: CC-BY-SA-4.0
  • ✓models_3d: 2 records
  • •package_fit (skip): no component.package_dims on the page: the model is unchecked against the datasheet drawing
  • ✓pads: 3 pins = 3 pads
  • ✓pose: 2 STEP(s) Z-up, seated, centred
  • ✓symbol: 3 pins agree
  • ✓symbol_text: no pin names collide
  • ✓visibility: public, source open
Evidencedatasheet
Verified files✓ fda24n40f.kicad_sym✓ fda24n40f.kicad_mod✓ fda24n40f.step
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Ray Publish 0.1.0 a591137 3h ago

FDA24N40F

onsemi · MOSFETs · TO-3PN

FDA24N40F from onsemi, in a TO-3PN. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

Pinout

Pin Name Type Function
1 G input Gate; controls the channel, with gate-to-source voltage rated ±30 V max and threshold VGS(th) of 3.0 to 5.0 V at ID = 250 μA.
2 D passive Drain; connected to the tab, with drain-to-source voltage rated 400 V and continuous drain current of 23 A at TC = 25°C.
3 S passive Source; current return terminal of the MOSFET and anode of the body diode, with continuous diode forward current of 23 A max.

Key specifications

Parameter Value
Manufacturer onsemi
Package TO-3PN
Category Transistors/Thyristors
Pins 3

Electrical characteristics

Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).

Parameter Symbol Min Typ Max Unit Conditions Page
Drain to Source Voltage VDSS 400 V 2
Gate to Source Voltage VGSS -30 30 V 2
Drain Current - Continuous ID 23 A TC = 25oC 2
Drain Current - Continuous ID 13.8 A TC = 100oC 2
Drain Current - Pulsed IDM 92 A Note 1 2
Single Pulsed Avalanche Energy EAS 1190 mJ Note 2 2
Avalanche Current IAR 23 A Note 1 2
Repetitive Avalanche Energy EAR 23.5 mJ Note 1 2
Peak Diode Recovery dv/dt dv/dt 4.5 V/ns Note 3 2
Power Dissipation PD 235 W TC = 25oC 2
Operating and Storage Temperature Range TJ, TSTG -55 150 oC 2
Maximum Lead Temperature for Soldering TL 300 oC 1/8 inch from case for 5 seconds 2
Thermal Resistance, Junction to Case, Max. RθJC 0.53 oC/W 2
Thermal Resistance, Junction to Ambient, Max. RθJA 40 2
Drain to Source Breakdown Voltage BVDSS 400 V ID = 250 μA, VGS = 0 V, TJ = 25oC 3
Zero Gate Voltage Drain Current IDSS 10 μA VDS = 400 V, VGS = 0 V 3
Zero Gate Voltage Drain Current IDSS 100 μA VDS = 320 V, TC = 125oC 3
Gate to Body Leakage Current IGSS -100 100 nA VGS = ±30 V, VDS = 0 V 3
Gate Threshold Voltage VGS(th) 3 5 V VGS = VDS, ID = 250 μA 3
Static Drain to Source On Resistance RDS(on) 0.15 0.19 Ω VGS = 10 V, ID = 11.5 A 3
Input Capacitance Ciss 2280 3030 pF VDS = 25 V, VGS = 0 V, f = 1 MHz 3
Output Capacitance Coss 370 490 pF 3
Reverse Transfer Capacitance Crss 25 38 pF 3
Total Gate Charge at 10V Qg(tot) 46 60 nC VDS = 320 V, ID = 23 A, VGS = 10 V (Note 4) 3
Turn-On Delay Time td(on) 40 90 ns VDS = 200 V, ID = 23 A, VGS = 10 V, RG = 25 Ω (Note 4) 3
Turn-On Rise Time tr 92 195 ns VDS = 200 V, ID = 23 A, VGS = 10 V, RG = 25 Ω (Note 4) 3
Turn-Off Delay Time td(off) 120 250 ns VDS = 200 V, ID = 23 A, VGS = 10 V, RG = 25 Ω (Note 4) 3
Turn-Off Fall Time tf 75 160 ns VDS = 200 V, ID = 23 A, VGS = 10 V, RG = 25 Ω (Note 4) 3
Maximum Continuous Drain to Source Diode Forward Current IS 23 A 3
Maximum Pulsed Drain to Source Diode Forward Current ISM 92 A 3
Drain to Source Diode Forward Voltage VSD 1.5 V VGS = 0 V, ISD = 23 A 3

CAD (KiCad official)

  • Symbol: FDA24N40F
  • Footprint: Package_TO_SOT_THT:TO-3P-3_Vertical
  • 3D model: TO-3PN (KiCad packages3D, STEP)
  • 3D model files: fda24n40f-etched.step / fda24n40f-etched.glb carry the MPN laser-etched on the die in a toggleable Adom.LaserEtch group (Fusion-ready); fda24n40f.step / fda24n40f.glb are the bare package body.

Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

  • Datasheet: onsemi datasheet (10 pp, sha256 2429ba5d9175c2c4, retrieved 2026-11-06, tier: lcsc)
  • Extractor: parts-factory 2.0.0 / extract_pins 0.3, primary claude-sonnet-5-5 (text+vision), consensus claude-opus-5-5 (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
  • CAD: KiCad official libraries (CC-BY-SA 4.0).

Datasheet PDF