Loads when you scroll to it. Unloads after 5 minutes in the background.

Symbol & Footprint

Schematic Symbol

Open full view ↗
Loads when you scroll to it. Unloads after 5 minutes in the background.

PCB Footprint

Open full view ↗
Loads when you scroll to it. Unloads after 5 minutes in the background.
Loads when you scroll to it. Unloads after 5 minutes in the background.
Download PDF
Contents

README

markdown

FCX493QTA

Diodes Incorporated · Bipolar (BJT) · SOT-89

FCX493QTA from Diodes Incorporated, in a SOT-89. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

Pinout

Pin Name Type Function
1 B input Base of the NPN transistor; continuous base current is rated at 200 mA maximum and VEBO is 7 V.
2 C passive Collector, also connected to the exposed collector pad/tab; VCEO is 100 V, VCBO is 120 V, and continuous IC is 1 A (2 A peak).
3 E passive Emitter of the NPN transistor; emitter-base breakdown voltage is 7 V minimum.

Key specifications

Parameter Value
Manufacturer Diodes Incorporated
Package SOT-89
Category Transistors/Thyristors
Pins 3

Electrical characteristics

Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).

Parameter Symbol Min Typ Max Unit Conditions Page
Collector-Base Voltage VCBO 120 V TA = +25°C 2
Collector-Emitter Voltage VCEO 100 V TA = +25°C 2
Emitter-Base Voltage VEBO 7 V TA = +25°C 2
Continuous Collector Current IC 1 A TA = +25°C 2
Peak Pulse Current ICM 2 A TA = +25°C 2
Continuous Base Current IB 200 mA TA = +25°C 2
Collector Power Dissipation PD 1 W Note 5, TA = +25°C 2
Operating and Storage Temperature Range TJ,TSTG -55 150 °C 2
ESD Human Body Model ESD HBM 4000 V JEDEC Class 3A 2
ESD Machine Model ESD MM 400 V JEDEC Class C 2
Thermal Resistance, Junction to Ambient Air RθJA 125 °C/W Note 5 2
Thermal Resistance, Junction to Leads RθJL 10.01 °C/W Note 6 2
Collector-Base Breakdown Voltage BVCBO 120 V IC = 100µA 4
Collector-Emitter Breakdown Voltage BVCEO 100 V IC = 1mA 4
Emitter-Base Breakdown Voltage BVEBO 7 V IE = 100µA 4
Collector Cutoff Current ICBO 100 nA VCB = 100V 4
Emitter Cutoff Current IEBO 100 nA VEB = 5V 4
DC current transfer Static ratio hFE 100 300 IC = 1mA, VCE = 10V 4
DC current transfer Static ratio hFE 100 IC = 250mA, VCE = 10V 4
DC current transfer Static ratio hFE 60 IC = 500mA, VCE = 10V 4
DC current transfer Static ratio hFE 20 IC = 1A, VCE = 10V 4
Collector-Emitter Saturation Voltage VCE(sat) 0.3 V IC = 500mA, IB = 50mA 4
Collector-Emitter Saturation Voltage VCE(sat) 0.6 V IC = 1A, IB = 100mA 4
Base-Emitter Saturation Voltage VBE(sat) 1.15 V IC = 1A, IB = 100mA 4
Base-Emitter Turn-on Voltage VBE(on) 1 V IC = 1A, VCE = 10V 4
Transitional Frequency ft 150 MHz IC = 50mA, VCE = 10V, f = 100MHz 4
Output capacitance Cobo 10 pF VCB = 10V, f = 1MHz 4

Materials and finish

As the datasheet states them (page.json metadata.appearance; the 3D model's colours follow it).

Part Material Colour / plating Datasheet says Page
contacts tin • Terminals: Matte Tin Finish, Solderable per MIL-STD-202, Method 208 1

CAD (KiCad official)

  • Symbol: FCX493QTA
  • Footprint: Package_TO_SOT_SMD:SOT-89-3
  • 3D model: SOT-89 (KiCad packages3D, STEP)
  • 3D model files: fcx493qta-etched.step / fcx493qta-etched.glb carry the MPN laser-etched on the die in a toggleable Adom.LaserEtch group (Fusion-ready); fcx493qta.step / fcx493qta.glb are the bare package body.

Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

  • Datasheet: Diodes Incorporated datasheet (7 pp, sha256 8ce3cdb1f38d976e, retrieved 2026-10-22, tier: manufacturer)
  • Extractor: parts-factory 2.0.0 / extract_pins 0.3, primary claude-sonnet-5-5 (text), consensus claude-sonnet-5-5 (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
  • CAD: KiCad official libraries (CC-BY-SA 4.0).

Datasheet PDF