component

FCS520

Public Made by Adom

by adom

GUOXIN JIAPIN SEMICONDUCTOR Bipolar (BJT), SOT-323. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.

componenttransistors-thyristorsfcs520factory-2.0.0extractor-text
Overview Files Discover Packages Releases Dependencies Issues Breadcrumbs Pull Requests Activity
main
Download ZIP Propose a change
Generated by kicad-footprint-generator · KiCad file format 20260206
Name Last commit message Last updated
docs Publish 0.1.0 · Ray 23d ago
viewers fcs520: viewers · Ray 23d ago
fcs520-etched.glb Publish 0.1.0 · Ray 23d ago
fcs520-etched.step fcs520: factory component page (tier=lcsc) · Ray 23d ago
fcs520-hero.glb fcs520: hero GLB from the etched model (keeps the MPN mark) · Ray 23d ago
fcs520-hero.overlay.json Publish 0.1.0 · Ray 23d ago
fcs520.glb Publish 0.1.0 · Ray 23d ago
fcs520.kicad_mod Publish 0.1.0 · Ray 23d ago
fcs520.kicad_sym Publish 0.1.0 · Ray 23d ago
fcs520.lbr Publish 0.1.0 · Ray 23d ago
fcs520.step Publish 0.1.0 · Ray 23d ago
package.json Publish 0.1.0 · Ray 23d ago
page.json Set visibility: public · Ray 23d ago
README.md Publish 0.1.0 · Ray 23d ago

FCS520

GUOXIN JIAPIN SEMICONDUCTOR · Bipolar (BJT) · SOT-323

FCS520 from GUOXIN JIAPIN SEMICONDUCTOR, in a SOT-323. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

Pinout

Pin Name Type Function
1 B input Base of the FCS520 NPN transistor; the datasheet gives emitter-base breakdown VEBO of 2 V max and VEB=1 V as the test condition for IEBO (0.1 µA max).
2 E passive Emitter of the FCS520 NPN transistor; the emitter-base breakdown voltage VEBO is rated at 2 V.
3 C passive Collector of the FCS520 NPN transistor; collector-emitter breakdown VCEO is rated at 12 V, collector current IC at 100 mA, and power dissipation PC at 150 mW.

Key specifications

Parameter Value
Manufacturer GUOXIN JIAPIN SEMICONDUCTOR
Package SOT-323
Category Transistors/Thyristors
Pins 3

Electrical characteristics

Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).

Parameter Symbol Min Typ Max Unit Conditions Page
Collector-base breakdown voltage (absolute maximum) VCBO 20 V TA=25℃ 1
Collector-emitter breakdown voltage (absolute maximum) VCEO 12 V TA=25℃ 1
Emitter-base breakdown voltage (absolute maximum) VEBO 2 V TA=25℃ 1
Collector current IC 100 mA TA=25℃ 1
Power dissipation PC 150 mW TA=25℃ 1
Junction temperature Tj 150 ℃ TA=25℃ 1
Storage temperature Tstg -65 150 ℃ TA=25℃ 1
Collector-base breakdown voltage VCBO 20 V IC=1.0µA 2
Collector-base leakage current ICBO 0.1 µA VCB=10V 2
Emitter-base leakage current IEBO 0.1 µA VEB=1V 2
DC current gain hFE 90 150 250 VCE=6V，IC=20mA 2
Noise figure NF 1.5 2 dB VCE=6V,IC=5mA,f=1GHz 2
Output feedback capacitance Cre 0.4 0.7 pF VCB=6V,IE=0mA,f=1MHz 2
Transition frequency fT 8 GHz VCE=6V,IC=20mA,f=1GHz 2
Power gain /S21e/2 12.5 dB VCE=6V,IC=20mA,f=1GHz 2

CAD (KiCad official)

  • Symbol: FCS520
  • Footprint: Package_TO_SOT_SMD:SOT-323_SC-70
  • 3D model: SOT-323 (KiCad packages3D, STEP)
  • 3D model files: fcs520-etched.step / fcs520-etched.glb carry the MPN laser-etched on the die in a toggleable Adom.LaserEtch group (Fusion-ready); fcs520.step / fcs520.glb are the bare package body.

Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

  • Datasheet: GUOXIN JIAPIN SEMICONDUCTOR datasheet (5 pp, sha256 c223fa9bce5f26de, retrieved 2026-10-18, tier: lcsc)
  • Datasheet language: Chinese. Pin names, descriptions, and specs on this page were extracted and translated to English by ds2sf; the linked PDF is the manufacturer original.
  • Extractor: parts-factory 2.0.0 / extract_pins 0.3, primary claude-haiku-5-5 (text), consensus claude-sonnet-5-5 (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
  • CAD: KiCad official libraries (CC-BY-SA 4.0).

Datasheet PDF