component

FCPF11N60

Public Made by Adom

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onsemi MOSFETs, TO-220F. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.

componenttransistorsfcpf11n60factory-2.0.0extractor-text

Verified FCPF11N60

by Ray · last 7 Nov 2026 · 1 record · files match
SymbolFootprint3D modelPins

Verification log 1 record

7 Nov 2026RayPublished by the parts factory: tier mfr, 3 pinsfiles match
SymbolFootprint3D modelPinsfor all variants
  • ✓component-page-verify: PASS
  • ✓cad_props: Datasheet, MPN and distributor properties match page.json
  • ✓component: FCPF11N60 · TO-220F · 3 pins
  • ✓copper: 3 copper pads, none touching another net
  • ✓datasheet: all 3 pin names found in the 11-page datasheet
  • ✓distributor: lcsc C899121, digikey 2156-FCPF11N60-ND, mouser 512-FCPF11N60
  • ✓family: TO-220F-3_Vertical
  • ✓files: 6 declared files present
  • ✓hero: docs/hero.png 4000x2500
  • ✓lbr: OK: /tmp/cpv-qwyabiad/x.lbr is a valid EAGLE .lbr with complete deviceset
  • ✓license: CC-BY-SA-4.0
  • ✓models_3d: 1 records
  • •package_fit (skip): no component.package_dims on the page: the model is unchecked against the datasheet drawing
  • ✓pads: 3 pins = 3 pads
  • ✓pose: 1 STEP(s) Z-up, seated, centred
  • ✓symbol: 3 pins agree
  • ✓symbol_text: no pin names collide
  • ✓visibility: public, source open
Evidencedatasheet
Verified files✓ fcpf11n60.kicad_sym✓ fcpf11n60.kicad_mod✓ fcpf11n60.step
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Ray Publish 0.1.0 4e2d454 4h ago

FCPF11N60

onsemi · MOSFETs · TO-220F

FCPF11N60 from onsemi, in a TO-220F. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

Pinout

Pin Name Type Function
1 G input Gate terminal of the N-channel SuperFET MOSFET; gate-source voltage is limited to ±30 V (VGSS).
2 D passive Drain terminal; the part is rated for 600 V minimum drain-source breakdown voltage (BVDSS at 25°C) and 11 A continuous drain current at TC = 25°C (FCPF11N60 is limited to 11 A by maximum junction temperature).
3 S passive Source terminal; maximum continuous drain-source diode forward current is 11 A (IS).

Key specifications

Parameter Value
Manufacturer onsemi
Package TO-220F
Category Transistors
Pins 3

Electrical characteristics

Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).

Parameter Symbol Min Typ Max Unit Conditions Page
Drain Current - Continuous (TC = 25°C) ID 11 A TC = 25°C 2
Drain Current - Pulsed IDM 33 A Note 1 2
Gate-Source Voltage VGSS -30 30 V 2
Single Pulsed Avalanche Energy EAS 340 mJ Note 2 2
Avalanche Current IAR 11 A Note 1 2
Repetitive Avalanche Energy EAR 12.5 mJ Note 1 2
Peak Diode Recovery dv/dt dv/dt 4.5 V/ns Note 3 2
Power Dissipation (TC = 25°C) PD 36 W TC = 25°C 2
Operating and Storage Temperature Range TJ, TSTG -55 150 °C 2
Maximum lead temperature for soldering purposes TL 300 °C 1/8" from case for 5 seconds 2
Thermal Resistance, Junction-to-Case RθJC 3.5 °C/W 2
Thermal Resistance, Junction-to-Ambient RθJA 62.5 °C/W 2
Drain-Source Breakdown Voltage BVDSS 600 V VGS = 0 V, ID = 250 µA, TJ = 25°C 3
Zero Gate Voltage Drain Current IDSS 1 µA VDS = 600 V, VGS = 0 V 3
Zero Gate Voltage Drain Current IDSS 10 µA VDS = 480 V, TC = 125°C 3
Gate-Body Leakage Current, Forward IGSSF 100 nA VGS = 30 V, VDS = 0 V 3
Gate-Body Leakage Current, Reverse IGSSR -100 nA VGS = -30 V, VDS = 0 V 3
Gate Threshold Voltage VGS(th) 3 5 V VDS = VGS, ID = 250 µA 3
Static Drain-Source On-Resistance RDS(on) 0.32 0.38 Ω VGS = 10 V, ID = 5.5 A 3
Input Capacitance Ciss 1148 1490 pF VDS = 25 V, VGS = 0 V, f = 1.0 MHz 3
Output Capacitance Coss 671 870 pF VDS = 25 V, VGS = 0 V, f = 1.0 MHz 3
Reverse Transfer Capacitance Crss 63 82 pF VDS = 25 V, VGS = 0 V, f = 1.0 MHz 3
Turn-On Delay Time td(on) 34 80 ns VDD = 300 V, ID = 11 A, RG = 25 Ω (Note 4, 5) 3
Turn-On Rise Time tr 98 205 ns VDD = 300 V, ID = 11 A, RG = 25 Ω (Note 4, 5) 3
Turn-Off Delay Time td(off) 119 250 ns VDD = 300 V, ID = 11 A, RG = 25 Ω (Note 4, 5) 3
Turn-Off Fall Time tf 56 120 ns VDD = 300 V, ID = 11 A, RG = 25 Ω (Note 4, 5) 3
Total Gate Charge Qg 40 52 nC VDS = 480 V, ID = 11 A, VGS = 10 V (Note 4, 5) 3
Maximum Continuous Drain-Source Diode Forward Current IS 11 A 3
Maximum Pulsed Drain-Source Diode Forward Current ISM 33 A 3
Drain-Source Diode Forward Voltage VSD 1.4 V VGS = 0 V, IS = 11 A 3

CAD (KiCad official)

  • Symbol: FCPF11N60
  • Footprint: Package_TO_SOT_THT:TO-220F-3_Vertical
  • 3D model: TO-220F (KiCad packages3D, STEP)

Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

  • Datasheet: onsemi datasheet (11 pp, sha256 8fe387a00ce620d1, retrieved 2026-11-07, tier: manufacturer)
  • Extractor: parts-factory 2.0.0 / extract_pins 0.3, primary claude-haiku-5-5 (text), consensus claude-sonnet-5-5 (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
  • CAD: KiCad official libraries (CC-BY-SA 4.0).

Datasheet PDF