# FCP11N60

**onsemi** · MOSFETs · TO-220

FCP11N60 from onsemi, in a TO-220. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

## Pinout

| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | G | input | Gate; controls the channel with VGS rated ±30 V maximum and threshold of 3.0 V to 5.0 V at ID = 250 µA. |
| 2 | D | passive | Drain (also connected to the tab); drain-source breakdown 600 V minimum and continuous drain current 11 A at TC = 25°C. |
| 3 | S | passive | Source; body diode continuous forward current 11 A and pulsed 33 A. |

## Key specifications

| Parameter | Value |
|---|---|
| Manufacturer | onsemi |
| Package | TO-220 |
| Category | Transistors/Thyristors |
| Pins | 3 |

## Electrical characteristics

Limits as printed in the datasheet (page.json `metadata.characteristics` carries them as data).

| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Drain-Source Breakdown Voltage | BVDSS | 600 |  |  | V | VGS = 0 V, ID = 250 µA, TJ = 25°C | 3 |
| Zero Gate Voltage Drain Current | IDSS |  |  | 1 | µA | VDS = 600 V, VGS = 0 V | 3 |
| Zero Gate Voltage Drain Current | IDSS |  |  | 10 | µA | VDS = 480 V, TC = 125°C | 3 |
| Gate-Body Leakage Current, Forward | IGSSF |  |  | 100 | nA | VGS = 30 V, VDS = 0 V | 3 |
| Gate-Body Leakage Current, Reverse | IGSSR |  |  | -100 | nA | VGS = -30 V, VDS = 0 V | 3 |
| Gate Threshold Voltage | VGS(th) | 3 |  | 5 | V | VDS = VGS, ID = 250 µA | 3 |
| Static Drain-Source On-Resistance | RDS(on) |  | 0.32 | 0.38 | Ω | VGS = 10 V, ID = 5.5 A | 3 |
| Input Capacitance | Ciss |  | 1148 | 1490 | pF | VDS = 25 V, VGS = 0 V, f = 1.0 MHz | 3 |
| Output Capacitance | Coss |  | 671 | 870 | pF | VDS = 25 V, VGS = 0 V, f = 1.0 MHz | 3 |
| Reverse Transfer Capacitance | Crss |  | 63 | 82 | pF | VDS = 25 V, VGS = 0 V, f = 1.0 MHz | 3 |
| Turn-On Delay Time | td(on) |  | 34 | 80 | ns | VDD = 300 V, ID = 11 A, RG = 25 Ω | 3 |
| Turn-On Rise Time | tr |  | 98 | 205 | ns | VDD = 300 V, ID = 11 A, RG = 25 Ω | 3 |
| Turn-Off Delay Time | td(off) |  | 119 | 250 | ns | VDD = 300 V, ID = 11 A, RG = 25 Ω | 3 |
| Turn-Off Fall Time | tf |  | 56 | 120 | ns | VDD = 300 V, ID = 11 A, RG = 25 Ω | 3 |
| Total Gate Charge | Qg |  | 40 | 52 | nC | VDS = 480 V, ID = 11 A, VGS = 10 V | 3 |
| Maximum Continuous Drain-Source Diode Forward Current | IS |  |  | 11 | A |  | 3 |
| Maximum Pulsed Drain-Source Diode Forward Current | ISM |  |  | 33 | A |  | 3 |
| Drain-Source Diode Forward Voltage | VSD |  |  | 1.4 | V | VGS = 0 V, IS = 11 A | 3 |
| Drain Current - Continuous | ID |  |  | 11 | A | TC = 25°C | 2 |
| Drain Current - Pulsed | IDM |  |  | 33 | A | Note 1 | 2 |
| Gate-Source Voltage | VGSS | -30 |  | 30 | V |  | 2 |
| Single Pulsed Avalanche Energy | EAS |  |  | 340 | mJ | Note 2 | 2 |
| Avalanche Current | IAR |  |  | 11 | A | Note 1 | 2 |
| Repetitive Avalanche Energy | EAR |  |  | 12.5 | mJ | Note 1 | 2 |
| Peak Diode Recovery dv/dt | dv/dt |  |  | 4.5 | V/ns | Note 3 | 2 |
| Power Dissipation | PD |  |  | 125 | W | TC = 25°C | 2 |
| Operating and Storage Temperature Range | TJ, TSTG | -55 |  | 150 | °C |  | 2 |
| Maximum lead temperature for soldering | TL |  |  | 300 | °C | 1/8" from case for 5 seconds | 2 |
| Thermal Resistance, Junction-to-Case | RθJC |  |  | 1 | °C/W |  | 2 |
| Thermal Resistance, Junction-to-Ambient | RθJA |  |  | 62.5 | °C/W |  | 2 |
| Thermal Resistance, Case-to-Sink | RθCS |  | 0.5 |  | °C/W |  | 2 |
| Power Dissipation Derating | PD |  | 1 |  | W/°C | Derate above 25°C | 2 |
| Drain-Source Breakdown Voltage | BVDSS |  | 650 |  | V | VGS = 0 V, ID = 250 µA, TJ = 150°C | 3 |
| Breakdown Voltage Temperature Coefficient | ∆BVDSS/∆TJ |  | 0.6 |  | V/°C | ID = 250 µA, Referenced to 25°C | 3 |
| Drain-Source Avalanche Breakdown Voltage | BVDS |  | 700 |  | V | VGS = 0 V, ID = 11 A | 3 |
| Forward Transconductance | gFS |  | 9.7 |  | S | VDS = 40 V, ID = 5.5 A (Note 4) | 3 |
| Output Capacitance | Coss |  | 35 |  | pF | VDS = 480 V, VGS = 0 V, f = 1.0 MHz | 3 |
| Effective Output Capacitance | Coss eff. |  | 95 |  | pF | VDS = 0V to 480 V, VGS = 0 V | 3 |
| Gate-Source Charge | Qgs |  | 7.2 |  | nC | VDS = 480 V, ID = 11 A, VGS = 10 V | 3 |
| Gate-Drain Charge | Qgd |  | 21 |  | nC | VDS = 480 V, ID = 11 A, VGS = 10 V | 3 |
| Reverse Recovery Time | trr |  | 390 |  | ns | VGS = 0 V, IS = 11 A, dIF/dt = 100 A/µs (Note 4) | 3 |
| Reverse Recovery Charge | Qrr |  | 5.7 |  | µC | VGS = 0 V, IS = 11 A, dIF/dt = 100 A/µs (Note 4) | 3 |

## CAD (KiCad official)

- Symbol: `FCP11N60`
- Footprint: `Package_TO_SOT_THT:TO-220-3_Vertical`
- 3D model: TO-220 (KiCad packages3D, STEP)
- 3D model files: `fcp11n60-etched.step` / `fcp11n60-etched.glb` carry the MPN laser-etched on the die in a toggleable `Adom.LaserEtch` group (Fusion-ready); `fcp11n60.step` / `fcp11n60.glb` are the bare package body.

## Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

- **Datasheet:** [onsemi datasheet](https://www.onsemi.com/pdf/datasheet/fcp11n60-d.pdf) (11 pp, sha256 `c11c8c75502ab82a`, retrieved 2026-10-30, tier: manufacturer)
- **Extractor:** parts-factory `2.0.0` / `extract_pins 0.3`, primary `claude-sonnet-5-5` (text), consensus `claude-sonnet-5-5` (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
- **CAD:** KiCad official libraries (CC-BY-SA 4.0).

[Datasheet PDF](docs/fcp11n60-datasheet.pdf)