component

FCP099N65S3

Public Made by Adom

by adom

onsemi MOSFETs, TO-220. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.

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FCP099N65S3

onsemi · MOSFETs · TO-220

FCP099N65S3 from onsemi, in a TO-220. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

Pinout

Pin Name Type Function
1 G input Gate; gate-to-source voltage is rated ±30 V DC and the gate threshold voltage is 2.5 V min to 4.5 V max at ID = 0.74 mA.
2 D passive Drain; drain-to-source voltage is rated 650 V and continuous drain current is 30 A at TC = 25°C.
3 S passive Source; source is the MOSFET current return, and the body diode continuous source-to-drain forward current is 30 A.

Key specifications

Parameter Value
Manufacturer onsemi
Package TO-220
Category Triode/MOS Tube/Transistor
Pins 3

Electrical characteristics

Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).

Parameter Symbol Min Typ Max Unit Conditions Page
Drain to Source Voltage VDSS 650 V 2
Gate to Source Voltage - DC VGSS -30 30 V DC 2
Gate to Source Voltage - AC VGSS -30 30 V f > 1 Hz 2
Drain Current - Continuous ID 30 A TC = 25°C 2
Drain Current - Continuous ID 19 A TC = 100°C 2
Drain Current - Pulsed IDM 75 A Note 1 2
Single Pulsed Avalanche Energy EAS 145 mJ Note 2 2
Avalanche Current IAS 4.4 A Note 2 2
Repetitive Avalanche Energy EAR 2.27 mJ Note 1 2
MOSFET dv/dt dv/dt 100 V/ns 2
Peak Diode Recovery dv/dt dv/dt 20 V/ns Note 3: ISD ≤ 15 A, di/dt ≤ 200 A/s, VDD ≤ 400 V, starting TJ = 25°C 2
Power Dissipation PD 227 W TC = 25°C 2
Operating and Storage Temperature Range TJ, TSTG -55 150 °C 2
Maximum Lead Temperature for Soldering TL 300 °C 1/8 in from case for 5 s 2
Thermal Resistance, Junction to Case, Max. RJC 0.55 °C/W 2
Thermal Resistance, Junction to Ambient, Max. RJA 62.5 °C/W 2
Drain to Source Breakdown Voltage BVDSS 650 V VGS = 0 V, ID = 1 mA, TJ = 25C 3
Drain to Source Breakdown Voltage BVDSS 700 V VGS = 0 V, ID = 1 mA, TJ = 150C 3
Zero Gate Voltage Drain Current IDSS 1 A VDS = 650 V, VGS = 0 V 3
Zero Gate Voltage Drain Current IDSS 1.4 A VDS = 520 V, TC = 125C 3
Gate to Body Leakage Current IGSS -100 100 nA VGS = ±30 V, VDS = 0 V 3
Gate Threshold Voltage VGS(th) 2.5 4.5 V VGS = VDS, ID = 0.74 mA 3
Static Drain to Source On Resistance RDS(on) 79 99 m VGS = 10 V, ID = 15 A 3
Maximum Continuous Source to Drain Diode Forward Current IS 30 A 3
Maximum Pulsed Source to Drain Diode Forward Current ISM 75 A 3

CAD (KiCad official)

  • Symbol: FCP099N65S3
  • Footprint: Package_TO_SOT_THT:TO-220-3_Vertical
  • 3D model: TO-220 (KiCad packages3D, STEP)
  • 3D model files: fcp099n65s3-etched.step / fcp099n65s3-etched.glb carry the MPN laser-etched on the die in a toggleable Adom.LaserEtch group (Fusion-ready); fcp099n65s3.step / fcp099n65s3.glb are the bare package body.

Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

  • Datasheet: onsemi datasheet (10 pp, sha256 7cecc2a5ae3564f1, retrieved 2026-10-18, tier: lcsc)
  • Extractor: parts-factory 2.0.0 / extract_pins 0.3, primary claude-sonnet-5-5 (text+vision), consensus claude-opus-5-5 (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
  • CAD: KiCad official libraries (CC-BY-SA 4.0).

Datasheet PDF