# FCH165N65S3R0-F155

**onsemi** · MOSFETs · TO-247-3

FCH165N65S3R0-F155 from onsemi, in a TO-247-3. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

## Pinout

| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | G | input | Gate; gate-to-source voltage rated ±30 V (DC and AC f > 1 Hz), with a threshold of 2.5 V min to 4.5 V max at ID = 0.44 mA and RDS(on) specified at VGS = 10 V. |
| 2 | D | passive | Drain; drain-to-source voltage rated 650 V (700 V at TJ = 150°C) with 19 A continuous drain current at TC = 25°C and 47.5 A pulsed. |
| 3 | S | passive | Source; carries the 19 A continuous body-diode forward current (47.5 A pulsed) and is the reference for VGS and VDS. |

## Key specifications

| Parameter | Value |
|---|---|
| Manufacturer | onsemi |
| Package | TO-247-3 |
| Category | Triode/MOS Tube/Transistor |
| Pins | 3 |

## Electrical characteristics

Limits as printed in the datasheet (page.json `metadata.characteristics` carries them as data).

| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Drain to Source Voltage | VDSS |  |  | 650 | V | TC = 25°C | 2 |
| Gate to Source Voltage DC | VGSS | -30 |  | 30 | V | DC | 2 |
| Gate to Source Voltage AC | VGSS | -30 |  | 30 | V | AC (f > 1 Hz) | 2 |
| Continuous Drain Current | ID |  |  | 19 | A | TC = 25°C | 2 |
| Continuous Drain Current | ID |  |  | 12.3 | A | TC = 100°C | 2 |
| Pulsed Drain Current | IDM |  |  | 47.5 | A | Note 1 | 2 |
| Single Pulsed Avalanche Energy | EAS |  |  | 87 | mJ | IAS = 2.7 A, RG = 25, starting TJ = 25°C | 2 |
| Avalanche Current | IAS |  |  | 2.7 | A | Note 2 | 2 |
| Repetitive Avalanche Energy | EAR |  |  | 1.54 | mJ | Note 1 | 2 |
| MOSFET dv/dt | dv/dt |  |  | 100 | V/ns |  | 2 |
| Peak Diode Recovery dv/dt | dv/dt |  |  | 20 | V/ns | Note 3 | 2 |
| Power Dissipation | PD |  |  | 154 | W | TC = 25°C | 2 |
| Power Dissipation Derating | PD |  |  | 1.23 | W/°C | Derate Above 25°C | 2 |
| Operating and Storage Temperature Range | TJ, TSTG | -55 |  | 150 | °C |  | 2 |
| Maximum Lead Temperature for Soldering | TL |  |  | 300 | °C | 1/8″ from Case for 5 s | 2 |
| Thermal Resistance, Junction to Case | RθJC |  |  | 0.81 | °C/W | Max. | 2 |
| Thermal Resistance, Junction to Ambient | RθJA |  |  | 40 | °C/W | Max. | 2 |
| Drain to Source Breakdown Voltage | BVDSS | 650 |  |  | V | VGS = 0 V, ID = 1 mA, TJ = 25C | 3 |
| Drain to Source Breakdown Voltage | BVDSS | 700 |  |  | V | VGS = 0 V, ID = 1 mA, TJ = 150C | 3 |
| Zero Gate Voltage Drain Current | IDSS |  |  | 1 | µA | VDS = 650 V, VGS =0V | 3 |
| Gate to Body Leakage Current | IGSS | -100 |  | 100 | nA | VGS = ±30 V, VDS =0V | 3 |
| Gate Threshold Voltage | VGS(th) | 2.5 |  | 4.5 | V | VGS =VDS, ID = 0.44 mA | 3 |
| Static Drain to Source On Resistance | RDS(on) |  | 140 | 165 | mΩ | VGS = 10 V, ID = 9.5 A | 3 |
| Source to Drain Diode Forward Voltage | VSD |  |  | 1.2 | V | VGS = 0 V, ISD = 9.5 A | 3 |
| Maximum Continuous Source to Drain Diode Forward Current | IS |  |  | 19 | A |  | 3 |
| Maximum Pulsed Source to Drain Diode Forward Current | ISM |  |  | 47.5 | A |  | 3 |
| Breakdown Voltage Temperature Coefficient | ΔBVDSS/ΔTJ |  | 0.64 |  | V/°C | ID = 1 mA, Referenced to 25C | 3 |
| Zero Gate Voltage Drain Current | IDSS |  | 0.85 |  | µA | VDS = 520 V, TC = 125C | 3 |
| Forward Transconductance | gFS |  | 12 |  | S | VDS = 20 V, ID = 9.5 A | 3 |
| Input Capacitance | Ciss |  | 1500 |  | pF | VDS = 400 V, VGS = 0 V, f = 1 MHz | 3 |
| Output Capacitance | Coss |  | 35 |  | pF |  | 3 |
| Effective Output Capacitance | Coss(eff.) |  | 341 |  | pF | VDS = 0 V to 400 V, VGS =0V | 3 |
| Energy Related Output Capacitance | Coss(er.) |  | 49 |  | pF | VDS = 0 V to 400 V, VGS =0V | 3 |
| Total Gate Charge at 10 V | Qg(tot) |  | 39 |  | nC | VDS = 400 V, ID = 9.5 A, VGS = 10 V | 3 |
| Gate to Source Gate Charge | Qgs |  | 11 |  | nC |  | 3 |
| Gate to Drain Miller Charge | Qgd |  | 16 |  | nC |  | 3 |
| Equivalent Series Resistance | ESR |  | 0.5 |  | Ω | f = 1 MHz | 3 |
| Turn-On Delay Time | td(on) |  | 17 |  | ns | VDD = 400 V, ID = 9.5 A, VGS = 10 V, Rg = 4.7 | 3 |
| Turn-On Rise Time | tr |  | 15 |  | ns |  | 3 |
| Turn-Off Delay Time | td(off) |  | 44 |  | ns |  | 3 |
| Turn-Off Fall Time | tf |  | 5 |  | ns |  | 3 |
| Reverse Recovery Time | trr |  | 339 |  | ns | VDD = 400 V, ISD = 9.5 A, dIF/dt = 100 A/s | 3 |
| Reverse Recovery Charge | Qrr |  | 5.8 |  | µC | VDD = 400 V, ISD = 9.5 A, dIF/dt = 100 A/s | 3 |

## CAD (KiCad official)

- Symbol: `FCH165N65S3R0-F155`
- Footprint: `Package_TO_SOT_THT:TO-247-3_Vertical`
- 3D model: TO-247-3 (KiCad packages3D, STEP)
- 3D model files: `fch165n65s3r0-f155-etched.step` / `fch165n65s3r0-f155-etched.glb` carry the MPN laser-etched on the die in a toggleable `Adom.LaserEtch` group (Fusion-ready); `fch165n65s3r0-f155.step` / `fch165n65s3r0-f155.glb` are the bare package body.

## Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

- **Datasheet:** [onsemi datasheet](https://www.onsemi.com/pdf/datasheet/fch165n65s3r0-f155-d.pdf) (10 pp, sha256 `97d60017bc2dd7f8`, retrieved 2026-10-26, tier: manufacturer)
- **Extractor:** parts-factory `2.0.0` / `extract_pins 0.3`, primary `claude-sonnet-5-5` (text), consensus `claude-sonnet-5-5` (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
- **CAD:** KiCad official libraries (CC-BY-SA 4.0).

[Datasheet PDF](docs/fch165n65s3r0-f155-datasheet.pdf)