component
FCH150N65F-F155
Public Made by Adomby adom
onsemi MOSFETs, TO-247-3. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.
Generated by kicad-footprint-generator · KiCad file format 20260206
| Name | Last updated |
|---|---|
| docs | 7d ago |
| viewers | 7d ago |
| fch150n65f-f155-etched.glb | 7d ago |
| fch150n65f-f155-etched.step | 7d ago |
| fch150n65f-f155-hero.glb | 7d ago |
| fch150n65f-f155-hero.overlay.json | 7d ago |
| fch150n65f-f155.glb | 7d ago |
| fch150n65f-f155.kicad_mod | 7d ago |
| fch150n65f-f155.kicad_sym | 7d ago |
| fch150n65f-f155.lbr | 7d ago |
| fch150n65f-f155.step | 7d ago |
| package.json | 7d ago |
| page.json | 7d ago |
| README.md | 7d ago |
| verification.json | 7d ago |
FCH150N65F-F155
onsemi · MOSFETs · TO-247-3
FCH150N65F-F155 from onsemi, in a TO-247-3. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.
Pinout
| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | G | input | Gate; controls the channel with VGS(th) of 3 V to 5 V at ID = 2.4 mA, absolute maximum VGSS ±20 V DC and ±30 V AC. |
| 2 | D | passive | Drain, also connected to the mounting tab; VDSS is 650 V and continuous ID is 24 A at TC = 25°C. |
| 3 | S | passive | Source; carries the continuous drain current of 24 A at TC = 25°C and the body diode forward current IS of 24 A. |
Key specifications
| Parameter | Value |
|---|---|
| Manufacturer | onsemi |
| Package | TO-247-3 |
| Category | Triode/MOS Tube/Transistor |
| Pins | 3 |
Electrical characteristics
Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).
| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Drain-source voltage | VDSS | 650 | V | 2 | |||
| Gate-source voltage DC | VGSS | -20 | 20 | V | DC, printed as ±20 V | 2 | |
| Gate-source voltage AC | VGSS | -30 | 30 | V | AC, printed as ±30 | 2 | |
| Continuous drain current | ID | 24 | A | TC = 25°C | 2 | ||
| Continuous drain current | ID | 14.9 | A | TC = 100°C | 2 | ||
| Pulsed drain current | IDM | 72 | A | Note 1 | 2 | ||
| Single pulse avalanche energy | EAS | 663 | mJ | Note 2 | 2 | ||
| Avalanche current | IAR | 4.7 | A | Note 1 | 2 | ||
| Repetitive avalanche energy | EAR | 2.98 | mJ | Note 1 | 2 | ||
| MOSFET dv/dt | dv/dt | 100 | V/ns | 2 | |||
| Peak diode recovery dv/dt | dv/dt | 50 | V/ns | Note 3 | 2 | ||
| Power dissipation | PD | 298 | W | TC = 25°C | 2 | ||
| Operating and storage junction temperature range | TJ, TSTG | -55 | 150 | °C | 2 | ||
| Maximum lead temperature for soldering | TL | 300 | °C | 1/8 in from case, 5 s | 2 | ||
| Thermal resistance, junction to case | RθJC | 0.42 | °C/W | 2 | |||
| Thermal resistance, junction to ambient | RθJA | 40 | °C/W | 2 | |||
| Drain-source breakdown voltage | BVDSS | 650 | V | VGS = 0 V, ID = 10 mA, TC = 25°C | 3 | ||
| Drain-source breakdown voltage | BVDSS | 700 | V | VGS = 0 V, ID = 10 mA, TC = 150°C | 3 | ||
| Zero gate voltage drain current | IDSS | 10 | µA | VDS = 650 V, VGS = 0 V | 3 | ||
| Gate-source leakage current | IGSS | -100 | 100 | nA | VGS = ±20 V, VDS = 0 V; printed as ±100 | 3 | |
| Gate threshold voltage | VGS(th) | 3 | 5 | V | VGS = VDS, ID = 2.4 mA | 3 | |
| Static drain-source on-resistance | RDS(on) | 133 | 150 | mΩ | VGS = 10 V, ID = 12 A | 3 | |
| Input capacitance | Ciss | 2810 | 3737 | pF | VDS = 100 V, VGS = 0 V, f = 1 MHz | 3 | |
| Output capacitance | Coss | 91 | 121 | pF | VDS = 100 V, VGS = 0 V, f = 1 MHz | 3 | |
| Total gate charge | Qg(tot) | 72 | 94 | nC | VDS = 380 V, ID = 12 A, VGS = 10 V, RG = 4.7 Ω | 3 | |
| Turn-on delay time | td(on) | 28 | 66 | ns | VDD = 380 V, ID = 12 A, VGS = 10 V, RG = 4.7 Ω | 3 | |
| Turn-on rise time | tr | 15 | 40 | ns | VDD = 380 V, ID = 12 A, VGS = 10 V, RG = 4.7 Ω | 3 | |
| Turn-off delay time | td(off) | 73 | 156 | ns | VDD = 380 V, ID = 12 A, VGS = 10 V, RG = 4.7 Ω | 3 | |
| Turn-off fall time | tf | 6 | 22 | ns | VDD = 380 V, ID = 12 A, VGS = 10 V, RG = 4.7 Ω | 3 | |
| Maximum continuous drain-source diode forward current | IS | 24 | A | 3 | |||
| Maximum pulsed drain-source diode forward current | ISM | 72 | A | 3 | |||
| Body diode forward voltage | VSD | 1.2 | V | VGS = 0 V, ISD = 10 A | 3 |
CAD (KiCad official)
- Symbol:
FCH150N65F-F155 - Footprint:
Package_TO_SOT_THT:TO-247-3_Vertical - 3D model: TO-247-3 (KiCad packages3D, STEP)
- 3D model files:
fch150n65f-f155-etched.step/fch150n65f-f155-etched.glbcarry the MPN laser-etched on the die in a toggleableAdom.LaserEtchgroup (Fusion-ready);fch150n65f-f155.step/fch150n65f-f155.glbare the bare package body.
Provenance
Data extracted from the manufacturer datasheet, not a distributor listing:
- Datasheet: onsemi datasheet (10 pp, sha256
125840bc314c6fe5, retrieved 2026-10-30, tier: manufacturer) - Extractor: parts-factory
2.0.0/extract_pins 0.3, primaryclaude-sonnet-5-5(text+vision), consensusclaude-opus-5-5(agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish. - CAD: KiCad official libraries (CC-BY-SA 4.0).