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FCH150N65F-F155

onsemi · MOSFETs · TO-247-3

FCH150N65F-F155 from onsemi, in a TO-247-3. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

Pinout

Pin Name Type Function
1 G input Gate; controls the channel with VGS(th) of 3 V to 5 V at ID = 2.4 mA, absolute maximum VGSS ±20 V DC and ±30 V AC.
2 D passive Drain, also connected to the mounting tab; VDSS is 650 V and continuous ID is 24 A at TC = 25°C.
3 S passive Source; carries the continuous drain current of 24 A at TC = 25°C and the body diode forward current IS of 24 A.

Key specifications

Parameter Value
Manufacturer onsemi
Package TO-247-3
Category Triode/MOS Tube/Transistor
Pins 3

Electrical characteristics

Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).

Parameter Symbol Min Typ Max Unit Conditions Page
Drain-source voltage VDSS 650 V 2
Gate-source voltage DC VGSS -20 20 V DC, printed as ±20 V 2
Gate-source voltage AC VGSS -30 30 V AC, printed as ±30 2
Continuous drain current ID 24 A TC = 25°C 2
Continuous drain current ID 14.9 A TC = 100°C 2
Pulsed drain current IDM 72 A Note 1 2
Single pulse avalanche energy EAS 663 mJ Note 2 2
Avalanche current IAR 4.7 A Note 1 2
Repetitive avalanche energy EAR 2.98 mJ Note 1 2
MOSFET dv/dt dv/dt 100 V/ns 2
Peak diode recovery dv/dt dv/dt 50 V/ns Note 3 2
Power dissipation PD 298 W TC = 25°C 2
Operating and storage junction temperature range TJ, TSTG -55 150 °C 2
Maximum lead temperature for soldering TL 300 °C 1/8 in from case, 5 s 2
Thermal resistance, junction to case RθJC 0.42 °C/W 2
Thermal resistance, junction to ambient RθJA 40 °C/W 2
Drain-source breakdown voltage BVDSS 650 V VGS = 0 V, ID = 10 mA, TC = 25°C 3
Drain-source breakdown voltage BVDSS 700 V VGS = 0 V, ID = 10 mA, TC = 150°C 3
Zero gate voltage drain current IDSS 10 µA VDS = 650 V, VGS = 0 V 3
Gate-source leakage current IGSS -100 100 nA VGS = ±20 V, VDS = 0 V; printed as ±100 3
Gate threshold voltage VGS(th) 3 5 V VGS = VDS, ID = 2.4 mA 3
Static drain-source on-resistance RDS(on) 133 150 mΩ VGS = 10 V, ID = 12 A 3
Input capacitance Ciss 2810 3737 pF VDS = 100 V, VGS = 0 V, f = 1 MHz 3
Output capacitance Coss 91 121 pF VDS = 100 V, VGS = 0 V, f = 1 MHz 3
Total gate charge Qg(tot) 72 94 nC VDS = 380 V, ID = 12 A, VGS = 10 V, RG = 4.7 Ω 3
Turn-on delay time td(on) 28 66 ns VDD = 380 V, ID = 12 A, VGS = 10 V, RG = 4.7 Ω 3
Turn-on rise time tr 15 40 ns VDD = 380 V, ID = 12 A, VGS = 10 V, RG = 4.7 Ω 3
Turn-off delay time td(off) 73 156 ns VDD = 380 V, ID = 12 A, VGS = 10 V, RG = 4.7 Ω 3
Turn-off fall time tf 6 22 ns VDD = 380 V, ID = 12 A, VGS = 10 V, RG = 4.7 Ω 3
Maximum continuous drain-source diode forward current IS 24 A 3
Maximum pulsed drain-source diode forward current ISM 72 A 3
Body diode forward voltage VSD 1.2 V VGS = 0 V, ISD = 10 A 3

CAD (KiCad official)

  • Symbol: FCH150N65F-F155
  • Footprint: Package_TO_SOT_THT:TO-247-3_Vertical
  • 3D model: TO-247-3 (KiCad packages3D, STEP)
  • 3D model files: fch150n65f-f155-etched.step / fch150n65f-f155-etched.glb carry the MPN laser-etched on the die in a toggleable Adom.LaserEtch group (Fusion-ready); fch150n65f-f155.step / fch150n65f-f155.glb are the bare package body.

Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

  • Datasheet: onsemi datasheet (10 pp, sha256 125840bc314c6fe5, retrieved 2026-10-30, tier: manufacturer)
  • Extractor: parts-factory 2.0.0 / extract_pins 0.3, primary claude-sonnet-5-5 (text+vision), consensus claude-opus-5-5 (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
  • CAD: KiCad official libraries (CC-BY-SA 4.0).

Datasheet PDF