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FCD9N60NTM-VB

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VBsemi Elec MOSFETs, TO-252. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.

componenttransistors-thyristorsfcd9n60ntm-vbfactory-2.0.0extractor-text

Verified FCD9N60NTM-VB

by Ray · last 2 Nov 2026 · 1 record · files match
SymbolFootprint3D modelPins

Verification log 1 record

2 Nov 2026RayPublished by the parts factory: tier lcsc, 3 pinsfiles match
SymbolFootprint3D modelPinsfor all variants
  • ✓component-page-verify: PASS
  • ✓cad_props: Datasheet, MPN and distributor properties match page.json
  • ✓component: FCD9N60NTM-VB · TO-252 · 3 pins
  • ✓copper: 3 copper pads, none touching another net
  • ✓datasheet: all 3 pin names found in the 8-page datasheet
  • •distributor (warn): no ['digikey', 'mouser'] number
  • ✓family: TO-252-2
  • ✓files: 7 declared files present
  • ✓hero: docs/hero.png 4000x2500
  • ✓lbr: OK: /tmp/cpv-5xxb0p1v/x.lbr is a valid EAGLE .lbr with complete deviceset
  • ✓license: CC-BY-SA-4.0
  • ✓models_3d: 2 records
  • •package_fit (skip): no component.package_dims on the page: the model is unchecked against the datasheet drawing
  • ✓pads: 3 pins = 3 pads
  • ✓pose: 2 STEP(s) Z-up, seated, centred
  • ✓symbol: 3 pins agree
  • ✓visibility: public, source open
Evidencedatasheet
Verified files✓ fcd9n60ntm-vb.kicad_sym✓ fcd9n60ntm-vb.kicad_mod✓ fcd9n60ntm-vb.step
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Generated by kicad-footprint-generator · KiCad file format 20260206
Name Last commit message Last updated
docs Publish 0.1.0 · Ray 5d ago
viewers fcd9n60ntm-vb: viewers · Ray 5d ago
fcd9n60ntm-vb-etched.glb Publish 0.1.0 · Ray 5d ago
fcd9n60ntm-vb-etched.step fcd9n60ntm-vb: factory component page (tier=lcsc) · Ray 5d ago
fcd9n60ntm-vb-hero.glb fcd9n60ntm-vb: hero GLB from the etched model (keeps the MPN mark) · Ray 5d ago
fcd9n60ntm-vb-hero.overlay.json Publish 0.1.0 · Ray 5d ago
fcd9n60ntm-vb.glb Publish 0.1.0 · Ray 5d ago
fcd9n60ntm-vb.kicad_mod Publish 0.1.0 · Ray 5d ago
fcd9n60ntm-vb.kicad_sym Publish 0.1.0 · Ray 5d ago
fcd9n60ntm-vb.lbr Publish 0.1.0 · Ray 5d ago
fcd9n60ntm-vb.step Publish 0.1.0 · Ray 5d ago
package.json Publish 0.1.0 · Ray 5d ago
page.json Set visibility: public · Ray 5d ago
README.md Publish 0.1.0 · Ray 5d ago
verification.json Verified: Published by the parts factory: tier lcsc, 3 pins · Ray 5d ago

FCD9N60NTM-VB

VBsemi Elec · MOSFETs · TO-252

FCD9N60NTM-VB from VBsemi Elec, in a TO-252. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

Pinout

Pin Name Type Function
1 G input Gate terminal, rated for gate-source voltage VGS of ± 30 V in the absolute maximum ratings.
2 D passive Drain terminal, rated for drain-source voltage VDS of 650 V, and the reference for the junction-to-case (drain) thermal resistance RthJC.
3 S passive Source terminal, the reference for gate-source voltage VGS and the source of the integral body diode, with continuous source-drain diode current IS of 11 A.

Key specifications

Parameter Value
Manufacturer VBsemi Elec
Package TO-252
Category Transistors/Thyristors
Pins 3

Electrical characteristics

Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).

Parameter Symbol Min Typ Max Unit Conditions Page
Drain-Source Voltage VDS 650 V 1
Gate-Source Voltage VGS -30 30 V 1
Pulsed Drain Current IDM 55 A 1
Single Pulse Avalanche Energy EAS 132 mJ 1
Operating Junction and Storage Temperature Range TJ, Tstg -55 150 °C 1
Drain-Source Voltage Slope dV/dt 50 V/ns TJ = 125 °C 1
Soldering Recommendations (Peak Temperature) 300 °C for 10 s 1
Maximum Junction-to-Ambient RthJA 60 °C/W 2
Maximum Junction-to-Case (Drain) RthJC 0.6 °C/W 2
Drain-Source Breakdown Voltage VDS 650 V VGS = 0 V, ID = 250 μA 2
Gate-Source Threshold Voltage (N) VGS(th) 2 4 V VDS = VGS, ID = 250 μA 2
Gate-Source Leakage IGSS -100 100 nA VGS = ± 20 V 2
Gate-Source Leakage IGSS -1 1 μA VGS = ± 30 V 2
Zero Gate Voltage Drain Current IDSS 1 μA VDS = 650 V, VGS = 0 V 2
Zero Gate Voltage Drain Current IDSS 10 μA VDS = 520 V, VGS = 0 V, TJ = 125 °C 2
Continuous Source-Drain Diode Current IS 11 A 2
Pulsed Diode Forward Current ISM 55 A 2
Diode Forward Voltage VSD 1.5 V TJ = 25 °C, IS = 5 A, VGS = 0 V 2
VDS Temperature Coefficient ΔVDS/TJ -0.65 V/°C Reference to 25 °C, ID = 1 mA 2
Drain-Source On-State Resistance RDS(on) 0.42 Ω VGS = 10 V ID = 5 A 2
Forward Transconductance gfs 16 S VDS = 30 V, ID = 5 A 2
Effective Output Capacitance, Energy Related Co(er) 63 pF VDS = 0 V to 520 V, VGS = 0 V 2
Effective Output Capacitance, Time Related Co(tr) 113 pF 2
Rise Time tr 11 35 ns VDD = 520 V, ID = 5 A, VGS = 10 V, Rg = 9.1 Ω 2
Turn-Off Delay Time td(off) 81 90 ns VDD = 520 V, ID = 5 A, VGS = 10 V, Rg = 9.1 Ω 2
Fall Time tf 25 40 ns VDD = 520 V, ID = 5 A, VGS = 10 V, Rg = 9.1 Ω 2
Gate Input Resistance Rg 3.5 Ω f = 1 MHz, open drain 2
Reverse Recovery Time trr 270 ns TJ = 25 °C, IF = IS = 5 A, dI/dt = 100 A/μs, VR = 400 V 2
Reverse Recovery Charge Qrr 3.3 μC TJ = 25 °C, IF = IS = 5 A, dI/dt = 100 A/μs, VR = 400 V 2
Reverse Recovery Current IRRM 30 A TJ = 25 °C, IF = IS = 5 A, dI/dt = 100 A/μs, VR = 400 V 2

CAD (KiCad official)

  • Symbol: FCD9N60NTM-VB
  • Footprint: Package_TO_SOT_SMD:TO-252-2
  • 3D model: TO-252 (KiCad packages3D, STEP)
  • 3D model files: fcd9n60ntm-vb-etched.step / fcd9n60ntm-vb-etched.glb carry the MPN laser-etched on the die in a toggleable Adom.LaserEtch group (Fusion-ready); fcd9n60ntm-vb.step / fcd9n60ntm-vb.glb are the bare package body.

Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

  • Datasheet: VBsemi Elec datasheet (8 pp, sha256 ff14fc946fe2b857, retrieved 2026-11-02, tier: lcsc)
  • Extractor: parts-factory 2.0.0 / extract_pins 0.3, primary claude-haiku-5-5 (text), consensus claude-sonnet-5-5 (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
  • CAD: KiCad official libraries (CC-BY-SA 4.0).

Datasheet PDF