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FCD5N60TM-VB

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VBsemi Elec MOSFETs, TO-252. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.

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FCD5N60TM-VB

VBsemi Elec · MOSFETs · TO-252

FCD5N60TM-VB from VBsemi Elec, in a TO-252. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

Pinout

Pin Name Type Function
1 G input Gate of the N-channel MOSFET, with gate-source voltage rated at ±30 V (absolute maximum) and gate threshold VGS(th) of 2 V to 4 V.
2 D passive Drain of the N-channel MOSFET, rated for drain-source voltage of 650 V; it is also the case, with junction-to-case (drain) thermal resistance RthJC of 0.6 °C/W maximum.
3 S passive Source of the N-channel MOSFET; the datasheet gives no separate electrical limit for this pin beyond the device ratings.

Key specifications

Parameter Value
Manufacturer VBsemi Elec
Package TO-252
Category Transistors/Thyristors
Pins 3

Electrical characteristics

Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).

Parameter Symbol Min Typ Max Unit Conditions Page
Drain-Source Voltage VDS 650 V 1
Gate-Source Voltage VGS -30 30 V 1
Operating Junction and Storage Temperature Range TJ, Tstg -55 150 °C 1
Soldering Recommendations (Peak Temperature) 300 °C for 10 s, 1.6 mm from case 1
Gate-Source Leakage IGSS -100 100 nA VGS = ±20 V 2
Gate-Source Leakage IGSS -1 1 μA VGS = ±30 V 2
Maximum Junction-to-Ambient RthJA 63 °C/W 2
Maximum Junction-to-Case (Drain) RthJC 0.6 °C/W 2
Drain-Source Breakdown Voltage VDS 650 V VGS = 0 V, ID = 250 μA 2
Gate-Source Threshold Voltage (N) VGS(th) 2 4 V VDS = VGS, ID = 250 μA 2
Zero Gate Voltage Drain Current IDSS 1 μA VDS = 650 V, VGS = 0 V 2
Zero Gate Voltage Drain Current (TJ = 125 °C) IDSS 10 μA VDS = 520 V, VGS = 0 V, TJ = 125 °C 2
Diode Forward Voltage VSD 1.5 V TJ = 25 °C, IS = 4 A, VGS = 0 V 2
Drain-Source On-State Resistance RDS(on) 0.7 Ω VGS = 10 V, ID = 4 A 2
VDS Temperature Coefficient ΔVDS/TJ -0.65 V/°C Reference to 25 °C, ID = 1 mA 2
Gate Input Resistance Rg 3.5 Ω f = 1 MHz, open drain 2
Reverse Recovery Time trr 190 ns TJ = 25 °C, IF = IS = 4 A, dI/dt = 100 A/μs, VR = 400 V 2
Reverse Recovery Charge Qrr 2.3 μC TJ = 25 °C, IF = IS = 4 A, dI/dt = 100 A/μs, VR = 400 V 2

CAD (KiCad official)

  • Symbol: FCD5N60TM-VB
  • Footprint: Package_TO_SOT_SMD:TO-252-2
  • 3D model: TO-252 (KiCad packages3D, STEP)
  • 3D model files: fcd5n60tm-vb-etched.step / fcd5n60tm-vb-etched.glb carry the MPN laser-etched on the die in a toggleable Adom.LaserEtch group (Fusion-ready); fcd5n60tm-vb.step / fcd5n60tm-vb.glb are the bare package body.

Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

  • Datasheet: VBsemi Elec datasheet (8 pp, sha256 63b9edc73a2f4af7, retrieved 2026-10-20, tier: lcsc)
  • Extractor: parts-factory 2.0.0 / extract_pins 0.3, primary claude-haiku-5-5 (text), consensus claude-sonnet-5-5 (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
  • CAD: KiCad official libraries (CC-BY-SA 4.0).

Datasheet PDF