component
FCD4N60-VB
Public Made by Adomby adom
VBsemi Elec MOSFETs, TO-252. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.
Generated by kicad-footprint-generator · KiCad file format 20260206
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FCD4N60-VB
VBsemi Elec · MOSFETs · TO-252
FCD4N60-VB from VBsemi Elec, in a TO-252. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.
Pinout
| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | G | input | Gate of the N-channel MOSFET, rated for a gate-source voltage of ±30 V with a VGS(th) of 2.0 V to 4.0 V at ID = 250 µA. |
| 2 | D | passive | Drain of the N-channel MOSFET, rated for VDS = 650 V with continuous drain current of 5 A at TC = 25 °C and 4 A at TC = 100 °C. |
| 3 | S | passive | Source of the N-channel MOSFET, carrying the body diode with continuous source-drain diode current IS of 5 A and pulsed current ISM of 16 A. |
Key specifications
| Parameter | Value |
|---|---|
| Manufacturer | VBsemi Elec |
| Package | TO-252 |
| Category | Triode/MOS Tube/Transistor |
| Pins | 3 |
Electrical characteristics
Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).
| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Drain-Source Voltage | VDS | 650 | V | 1 | |||
| Gate-Source Voltage | VGS | -30 | 30 | V | 1 | ||
| Continuous Drain Current | ID | 5 | A | VGS at 10 V; TC = 25 °C | 1 | ||
| Continuous Drain Current | ID | 4 | A | TC = 100 °C | 1 | ||
| Pulsed Drain Current | IDM | 16 | A | 1 | |||
| Single Pulse Avalanche Energy | EAS | 120 | mJ | Starting TJ = 25 °C, L = 24 mH, RG = 25 Ω, IAS = 3.2 A | 1 | ||
| Repetitive Avalanche Current | IAR | 34 | A | 1 | |||
| Peak Diode Recovery dV/dt | dV/dt | 4.5 | V/ns | ISD ≤ 3.2 A, dI/dt ≤ 90 A/µs, VDD ≤ VDS, TJ ≤ 150 °C | 1 | ||
| Operating Junction and Storage Temperature Range | TJ, Tstg | -55 | 150 | °C | 1 | ||
| Soldering Recommendations (Peak Temperature) for 10 s | 300 | 1.6 mm from case, for 10 s | 1 | ||||
| Mounting Torque | 10 | lbf·in | 6-32 or M3 screw | 1 | |||
| Mounting Torque | 1.1 | N·m | 6-32 or M3 screw | 1 | |||
| Total Gate Charge (max) | Qg | 15 | nC | 1 | |||
| Drain-Source Breakdown Voltage | VDS | 650 | V | VGS = 0 V, ID = 250 µA | 2 | ||
| Gate-Source Threshold Voltage | VGS(th) | 2 | 4 | V | VDS = VGS, ID = 250 µA | 2 | |
| Gate-Source Leakage | IGSS | -100 | 100 | nA | VGS = ±30 V | 2 | |
| Zero Gate Voltage Drain Current | IDSS | 10 | µA | VDS = 650 V, VGS = 0 V | 2 | ||
| Zero Gate Voltage Drain Current | IDSS | 100 | µA | VDS = 520 V, VGS = 0 V, TJ = 125 °C | 2 | ||
| Forward Transconductance | gfs | 8 | S | VDS = 50 V, ID = 2.5 A | 2 | ||
| Continuous Source-Drain Diode Current | IS | 5 | A | integral reverse p-n junction diode | 2 | ||
| Pulsed Diode Forward Current | ISM | 16 | A | 2 | |||
| Body Diode Voltage | VSD | 1.5 | V | TJ = 25 °C, IS = 3.2 A, VGS = 0 V | 2 | ||
| Body Diode Reverse Recovery Charge | Qrr | 2.1 | 3.2 | µC | 2 | ||
| VDS Temperature Coefficient | ΔVDS/TJ | 0.6 | mV/°C | Reference to 25 °C, ID = 1 mA | 2 | ||
| Drain-Source On-State Resistance | RDS(on) | 0.95 | Ω | VGS = 10 V, ID = 2.5 A | 2 | ||
| Input Capacitance | Ciss | 320 | pF | VGS = 0 V, VDS = 25 V, f = 1.0 MHz | 2 | ||
| Output Capacitance | Coss | 75 | pF | VGS = 0 V, VDS = 25 V, f = 1.0 MHz | 2 | ||
| Output Capacitance | Coss | 500 | pF | VGS = 0 V, VDS = 1.0 V, f = 1.0 MHz | 2 | ||
| Output Capacitance | Coss | 83 | pF | VGS = 0 V, VDS = 520 V, f = 1.0 MHz | 2 | ||
| Turn-On Delay Time | td(on) | 8 | ns | VDD = 325 V, ID = 3.2 A, RG = 9.1 Ω, RD = 62 Ω, see fig. 10b | 2 | ||
| Rise Time | tr | 40 | ns | VDD = 325 V, ID = 3.2 A, RG = 9.1 Ω, RD = 62 Ω, see fig. 10b | 2 | ||
| Turn-Off Delay Time | td(off) | 50 | ns | VDD = 325 V, ID = 3.2 A, RG = 9.1 Ω, RD = 62 Ω, see fig. 10b | 2 | ||
| Fall Time | tf | 30 | ns | VDD = 325 V, ID = 3.2 A, RG = 9.1 Ω, RD = 62 Ω, see fig. 10b | 2 | ||
| Body Diode Reverse Recovery Time | trr | 180 | ns | TJ = 25 °C, IF = 3.2 A, dI/dt = 100 A/µs | 2 |
CAD (KiCad official)
- Symbol:
FCD4N60-VB - Footprint:
Package_TO_SOT_SMD:TO-252-2 - 3D model: TO-252 (KiCad packages3D, STEP)
- 3D model files:
fcd4n60-vb-etched.step/fcd4n60-vb-etched.glbcarry the MPN laser-etched on the die in a toggleableAdom.LaserEtchgroup (Fusion-ready);fcd4n60-vb.step/fcd4n60-vb.glbare the bare package body.
Provenance
Data extracted from the manufacturer datasheet, not a distributor listing:
- Datasheet: VBsemi Elec datasheet (9 pp, sha256
a8b8aacce450dcd5, retrieved 2026-10-28, tier: lcsc) - Extractor: parts-factory
2.0.0/extract_pins 0.3, primaryclaude-haiku-5-5(text), consensusclaude-sonnet-5-5(agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish. - CAD: KiCad official libraries (CC-BY-SA 4.0).