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F4N65

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Shandong Jingdao Microelectronics MOSFETs, ITO-220AB-3. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.

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F4N65

Shandong Jingdao Microelectronics · MOSFETs · ITO-220AB-3

F4N65 from Shandong Jingdao Microelectronics, in a ITO-220AB-3. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

Pinout

Pin Name Type Function
1 Gate input Gate terminal of the N-channel MOSFET, with gate-source voltage rated at ±30 V (VGSS).
2 Drain passive Drain terminal, rated for 650 V drain-source voltage (VDSS) and 4 A continuous drain current (ID).
3 Source passive Source terminal, the reference for the gate, with gate-source voltage limited to ±30 V (VGSS).

Key specifications

Parameter Value
Manufacturer Shandong Jingdao Microelectronics
Package ITO-220AB-3
Category Transistors/Thyristors
Pins 3

Electrical characteristics

Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).

Parameter Symbol Min Typ Max Unit Conditions Page
Drain-Source Voltage VDSS 650 V 1
Gate-Source Voltage VGSS -30 30 V 1
Continuous Drain Current ID 4 A 1
Pulsed Drain Current IDM 8 A Repetitive rating, pulse width limited by maximum junction temperature (Note 2) 1
Avalanche Energy Single Pulsed EAS 173 mJ L=30mH, IAS=3.4A, VDD=50V, RG=25Ω, Starting TJ=25°C (Note 3) 1
Power Dissipation PD 32 W 1
Peak Diode Recovery dv/dt dv/dt 2.1 V/ns ISD≤4A, di/dt≤200A/μs, VDD≤BVDSS, Starting TJ=25°C (Note 4) 1
Operation Junction Temperature and Storage Temperature Tj,Tstg -55 150 °C 1
Drain-Source Breakdown Voltage BVDSS 650 V VDS=0V,ID=250uA 2
Gate-Source Leakage Current (forward) IGSS 100 nA VGS=30V,VDS=0V (printed as Forward VGS=30V,VDS=0V) 2
Gate-Source Leakage Current (reverse) IGSS -100 nA Reverse VGS=-30V,VDS=0V 2
Drain-Source Leakage Current IDSS 10 uA VDS=650V,VGS=0V 2
Static Drain-Source On-State Resistance RDS(ON) 2.6 Ω VGS=10V,ID=2.0A 2
Gate Threshold Voltage VGS(TH) 2 4 V VDS=VGS,ID=250uA 2
Maximum Body-Diode Continuous Current IS 4 A 2
Maximum Body-Diode Pulsed Current ISM 8 A 2
Thermal resistance, Junction to Ambient RthJA 63 °C/W Device mounted on FR-4 substrate PC board, 2oz copper, with 1inch square copper plate 1
Thermal resistance, Junction to Case RthJC 4 °C/W 1
Input Capacitance CISS 560 pF VDS=25V,VGS=0V,f=1.0MHz 2
Reverse Transfer Capacitance CRSS 5 pF VDS=25V,VGS=0V,f=1.0MHz 2
Output Capacitance COSS 55 pF VDS=25V,VGS=0V,f=1.0MHz 2
Total Gate Charge (Note 1) QG 13 nC VDS=520V,VGS=10V,ID=4A,IG=1mA (NOTE1,2) 2
Gate-Drain Charge (Note 1) QGD 2.2 nC VDS=520V,VGS=10V,ID=4A,IG=1mA (NOTE1,2) 2
Gate-Source Charge (Note 1) QGS 4 nC VDS=520V,VGS=10V,ID=4A,IG=1mA (NOTE1,2) 2
Turn-On Delay Time (Note 1) tD(ON) 7 ns VDS=100V,VGS=10V,ID=4A,RG=25Ω (NOTE1,2) 2
Turn-On Rise Time tR 36 ns VDS=100V,VGS=10V,ID=4A,RG=25Ω (NOTE1,2) 2
Turn-Off Delay Time tD(OFF) 16 ns VDS=100V,VGS=10V,ID=4A,RG=25Ω (NOTE1,2) 2
Turn-Off Fall Time tF 22 ns VDS=100V,VGS=10V,ID=4A,RG=25Ω (NOTE1,2) 2
Drain-Source Diode Forward Voltage (Note 1) VSD 1.4 V IS=7A,VGS=0V 2
Reverse Recovery Time (Note 1) trr 250 ns IS=4A,VGS=0V,di/dt=100A/us 2
Reverse Recovery Charge Qrr 4.5 uC IS=4A,VGS=0V,di/dt=100A/us 2

CAD (KiCad official)

  • Symbol: F4N65
  • Footprint: Package_TO_SOT_THT:TO-220F-3_Vertical
  • 3D model: ITO-220AB-3 (KiCad packages3D, STEP)

Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

  • Datasheet: Shandong Jingdao Microelectronics datasheet (8 pp, sha256 e1f63e5f5a9352a4, retrieved 2026-10-15, tier: lcsc)
  • Extractor: parts-factory 2.0.0 / extract_pins 0.3, primary claude-haiku-5-5 (text), consensus claude-sonnet-5-5 (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
  • CAD: KiCad official libraries (CC-BY-SA 4.0).

Datasheet PDF