component

F4C10120A

Public Made by Adom

by adom

FUXINSEMI Schottky Barrier Diodes (SBD), TO-220-2. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.

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F4C10120A

FUXINSEMI · Schottky Barrier Diodes (SBD) · TO-220-2

F4C10120A from FUXINSEMI, in a TO-220-2. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

Pinout

Pin Name Type Function
1 PIN 1 passive Cathode terminal of the 1200 V SiC Schottky diode (datasheet labels only PIN 1; polarity is not stated in the text, standard for TO-220AC).
2 PIN 2 passive Anode terminal of the 1200 V SiC Schottky diode, 10 A rated at TC=156˚C (datasheet labels only PIN 2; polarity is not stated in the text).

Key specifications

Parameter Value
Manufacturer FUXINSEMI
Package TO-220-2
Category Diodes
Pins 2

Electrical characteristics

Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).

Parameter Symbol Min Typ Max Unit Conditions Page
Repetitive Peak Reverse Voltage VRRM 1200 V 1
Surge Peak Reverse Voltage VRSM 1300 V 1
DC Peak Reverse Voltage VR 1200 V 1
Continuous Forward Current IF 33 A TC=25˚C 1
Continuous Forward Current IF 16 A TC=135˚C 1
Continuous Forward Current IF 10 A TC=156˚C 1
Repetitive Peak Forward Surge Current IFRM 47 A TC=25˚C, tP=10 ms, Half Sine Pulse 1
Repetitive Peak Forward Surge Current IFRM 31.5 A TC=110˚C, tP=10 ms, Half Sine Pulse 1
Non-Repetitive Forward Surge Current IFSM 71 A TC=25˚C, tP=10 ms, Half Sine Pulse 1
Non-Repetitive Forward Surge Current IFSM 59.5 A TC=110˚C, tP=10 ms, Half Sine Pulse 1
Non-Repetitive Peak Forward Current IF,Max 750 A TC=25˚C, tP=10 s, Pulse 1
Non-Repetitive Peak Forward Current IF,Max 620 A TC=110˚C, tP=10 s, Pulse 1
Power Dissipation Ptot 166.5 W TC=25˚C 1
Power Dissipation Ptot 72 W TC=110˚C 1
Diode dV/dt ruggedness dV/dt 200 V/ns VR=0-960V 1
i2t value ∫i2dt 25 A2s TC=25˚C, tP=10 ms 1
i2t value ∫i2dt 17.5 A2s TC=110˚C, tP=10 ms 1
Operating Junction Range TJ -55 175 ˚C 1
Storage Temperature Range Tstg -55 135 ˚C 1
Mounting Torque 8.8 Nm M3 screw 1
Forward Voltage VF 1.5 1.8 V IF = 10 A TJ=25°C 2
Forward Voltage VF 2.2 3 V IF = 10 A TJ=175°C 2
Reverse Current IR 30 250 μA VR = 1200 V TJ=25°C 2
Reverse Current IR 55 350 μA VR = 1200 V TJ=175°C 2
Total Capacitive Charge QC 52 nC VR = 800 V, IF = 10A, di/dt = 200 A/μs, TJ = 25°C 2
Total Capacitance C 754 pF VR = 0 V, TJ = 25°C, f = 1 MHz 2
Total Capacitance C 45 pF VR = 400 V, TJ = 25˚C, f = 1 MHz 2
Total Capacitance C 38 pF VR = 800 V, TJ = 25˚C, f = 1 MHz 2
Capacitance Stored Energy EC 14.5 μJ VR = 800 V 2
Thermal Resistance from Junction to Case RJC 0.9 °C/W 2

CAD (KiCad official)

  • Symbol: F4C10120A
  • Footprint: Package_TO_SOT_THT:TO-220-2_Vertical
  • 3D model: TO-220-2 (KiCad packages3D, STEP)
  • 3D model files: f4c10120a-etched.step / f4c10120a-etched.glb carry the MPN laser-etched on the die in a toggleable Adom.LaserEtch group (Fusion-ready); f4c10120a.step / f4c10120a.glb are the bare package body.

Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

  • Datasheet: FUXINSEMI datasheet (5 pp, sha256 118194c8023565de, retrieved 2026-10-23, tier: lcsc)
  • Extractor: parts-factory 2.0.0 / extract_pins 0.3, primary claude-sonnet-5-5 (text), consensus claude-sonnet-5-5 (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
  • CAD: KiCad official libraries (CC-BY-SA 4.0).

Datasheet PDF