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Contents

Pinout
Key specifications
Electrical characteristics
CAD (KiCad official)
Provenance

README

markdown

ESS2022A

ElecSuper · MOSFETs · SOP-8

ESS2022A from ElecSuper, in a SOP-8. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

Pinout

Pin	Name	Type	Function
1	Source	passive	Source terminal of the -20 V P-channel MOSFET; the datasheet lists pins 1/2/3 together as Source.
2	Source	passive	Source terminal of the -20 V P-channel MOSFET; the datasheet lists pins 1/2/3 together as Source.
3	Source	passive	Source terminal of the -20 V P-channel MOSFET; the datasheet lists pins 1/2/3 together as Source.
4	Gate	input	Gate terminal of the MOSFET; the absolute maximum gate-source voltage VGS is ±10 V.
5	Drain	passive	Drain terminal of the MOSFET; the absolute maximum drain-source voltage BVDSS is -20 V and continuous drain current is -11 A at TA=25°C.
6	Drain	passive	Drain terminal of the MOSFET; the absolute maximum drain-source voltage BVDSS is -20 V and continuous drain current is -11 A at TA=25°C.
7	Drain	passive	Drain terminal of the MOSFET; the absolute maximum drain-source voltage BVDSS is -20 V and continuous drain current is -11 A at TA=25°C.
8	Drain	passive	Drain terminal of the MOSFET; the absolute maximum drain-source voltage BVDSS is -20 V and continuous drain current is -11 A at TA=25°C.

Key specifications

Parameter	Value
Manufacturer	ElecSuper
Package	SOP-8
Category	Transistors/Thyristors
Pins	8

Electrical characteristics

Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).

Parameter	Symbol	Min	Typ	Max	Unit	Conditions	Page
Drain-Source Voltage	BVDSS	-20			V		2
Gate-Source Voltage	VGS	-10		10	V		2
Continuous Drain Current	ID	-11			A	TA=25°C	2
Continuous Drain Current	ID	-7			A	TA=100°C	2
Maximum Power Dissipation	PD			3.1	W		2
Pulsed Drain Current	IDM	-44			A		2
Operating Junction Temperature	TJ			150	°C		2
Lead Temperature	TL			260	°C		2
Storage Temperature Range	Tstg	-55		150	°C		2
Junction-to-Ambient Resistance	RθJA			40	°C/W	Single operation	2
Drain-to-Source Breakdown Voltage	BVDSS	-20			V	VGS=0V, ID=-250uA	3
Zero Gate Voltage Drain Current	IDSS			-1	uA	VDS=-20V, VGS=0V	3
Gate-to-source Leakage Current	IGSS	-100		100	nA	VDS=0V, VGS=±10V	3
Gate Threshold Voltage	VGS(TH)	-0.4	-0.65	-1	V	VGS=VDS, ID=-250uA	3
Drain-to-source On-resistance	RDS(on)		11	17	mΩ	VGS=-4.5V, ID=-10A	3
Drain-to-source On-resistance	RDS(on)		14	21	mΩ	VGS=-2.5V, ID=-6.5A	3
Forward Voltage	VSD			-1.5	V	VGS=0V, IS=-10A	3

CAD (KiCad official)

Symbol: ESS2022A
Footprint: Package_SO:SOIC-8_3.9x4.9mm_P1.27mm
3D model: SOP-8 (KiCad packages3D, STEP)
3D model files: ess2022a-etched.step / ess2022a-etched.glb carry the MPN laser-etched on the die in a toggleable Adom.LaserEtch group (Fusion-ready); ess2022a.step / ess2022a.glb are the bare package body.

Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

Datasheet: ElecSuper datasheet (10 pp, sha256 1c1962955125776f, retrieved 2026-10-17, tier: lcsc)
Extractor: parts-factory 2.0.0 / extract_pins 0.3, primary claude-haiku-5-5 (text), consensus claude-sonnet-5-5 (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
CAD: KiCad official libraries (CC-BY-SA 4.0).

Datasheet PDF