component
ESJ2302
Public Made by Adomby adom
ElecSuper MOSFETs, SOT-23. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.
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ESJ2302
ElecSuper · MOSFETs · SOT-23
ESJ2302 from ElecSuper, in a SOT-23. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.
Pinout
| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | Gate | input | Gate of the N-channel MOSFET; gate-source voltage limited to ±12 V absolute maximum, with threshold of 0.4 to 1.0 V and ESD protection. |
| 2 | Source | passive | Source of the N-channel MOSFET; continuous drain current is 3.3 A at TA=25℃. |
| 3 | Drain | passive | Drain of the N-channel MOSFET; drain-source breakdown voltage is 20 V minimum, with RDS(on) of 45 mΩ typ at VGS=4.5 V. |
Key specifications
| Parameter | Value |
|---|---|
| Manufacturer | ElecSuper |
| Package | SOT-23 |
| Category | Triode/MOS Tube/Transistor |
| Pins | 3 |
Electrical characteristics
Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).
| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Drain-to-Source Breakdown Voltage | BVDSS | 20 | V | VGS=0V, ID=250uA | 3 | ||
| Zero Gate Voltage Drain Current | IDSS | 1 | uA | VDS=20V, VGS=0V | 3 | ||
| Gate-to-source Leakage Current | IGSS | -100 | 100 | nA | VDS=0V, VGS=±12V | 3 | |
| Gate Threshold Voltage | VGS(TH) | 0.4 | 0.7 | 1 | V | VGS=VDS, ID=250uA | 3 |
| Drain-to-source On-resistance | RDS(on) | 45 | 55 | mΩ | VGS=4.5V, ID=3A | 3 | |
| Drain-to-source On-resistance | RDS(on) | 62 | 85 | mΩ | VGS=2.5V, ID=2A | 3 | |
| Body Diode Forward Voltage | VSD | 1.5 | V | VGS=0V, IS=3A | 3 | ||
| Drain-Source Voltage | BVDSS | 20 | V | TA=25℃ | 2 | ||
| Gate-Source Voltage | VGS | -12 | 12 | V | TA=25℃ | 2 | |
| Continuous Drain Current | ID | 3.3 | A | TA=25℃ | 2 | ||
| Continuous Drain Current | ID | 2.1 | A | TA=100℃ | 2 | ||
| Maximum Power Dissipation | PD | 0.9 | mW | TA=25℃ | 2 | ||
| Pulsed Drain Current | IDM | 13.2 | A | TA=25℃ | 2 | ||
| Operating Junction Temperature | TJ | 150 | °C | 2 | |||
| Lead Temperature | TL | 260 | °C | 2 | |||
| Storage Temperature Range | Tstg | -55 | 150 | °C | 2 | ||
| Junction-to-Ambient Thermal Resistance | RθJA | 138 | °C/W | Single Operation | 2 | ||
| Input Capacitance | CISS | 200 | pF | VGS=0V, f=1MHz, VDS=10V | 3 | ||
| Output Capacitance | COSS | 35 | pF | VGS=0V, f=1MHz, VDS=10V | 3 | ||
| Reverse Transfer Capacitance | CRSS | 28 | pF | VGS=0V, f=1MHz, VDS=10V | 3 | ||
| Total Gate Charge | QG(TOT) | 3 | nC | VGS=4.5V, VDS=10V, ID=2A | 3 | ||
| Gate-to-Source Charge | QGS | 0.5 | nC | VGS=4.5V, VDS=10V, ID=2A | 3 | ||
| Gate-to-Drain Charge | QGD | 0.7 | nC | VGS=4.5V, VDS=10V, ID=2A | 3 | ||
| Turn-On Delay Time | td(ON) | 3 | ns | VGS=4.5V, VDS=10V, ID=2A, RG=3Ω | 3 | ||
| Rise Time | tr | 11 | ns | VGS=4.5V, VDS=10V, ID=2A, RG=3Ω | 3 | ||
| Turn-Off Delay Time | td(OFF) | 20 | ns | VGS=4.5V, VDS=10V, ID=2A, RG=3Ω | 3 | ||
| Fall Time | tf | 8 | ns | VGS=4.5V, VDS=10V, ID=2A, RG=3Ω | 3 |
CAD (KiCad official)
- Symbol:
ESJ2302 - Footprint:
Package_TO_SOT_SMD:SOT-23 - 3D model: SOT-23 (KiCad packages3D, STEP)
- 3D model files:
esj2302-etched.step/esj2302-etched.glbcarry the MPN laser-etched on the die in a toggleableAdom.LaserEtchgroup (Fusion-ready);esj2302.step/esj2302.glbare the bare package body.
Provenance
Data extracted from the manufacturer datasheet, not a distributor listing:
- Datasheet: ElecSuper datasheet (7 pp, sha256
e33f8c1cedaba3fe, retrieved 2026-10-31, tier: lcsc) - Extractor: parts-factory
2.0.0/extract_pins 0.3, primaryclaude-sonnet-5-5(text), consensusclaude-sonnet-5-5(agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish. - CAD: KiCad official libraries (CC-BY-SA 4.0).
# ESJ2302
**ElecSuper** · MOSFETs · SOT-23
ESJ2302 from ElecSuper, in a SOT-23. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.
## Pinout
| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | Gate | input | Gate of the N-channel MOSFET; gate-source voltage limited to ±12 V absolute maximum, with threshold of 0.4 to 1.0 V and ESD protection. |
| 2 | Source | passive | Source of the N-channel MOSFET; continuous drain current is 3.3 A at TA=25℃. |
| 3 | Drain | passive | Drain of the N-channel MOSFET; drain-source breakdown voltage is 20 V minimum, with RDS(on) of 45 mΩ typ at VGS=4.5 V. |
## Key specifications
| Parameter | Value |
|---|---|
| Manufacturer | ElecSuper |
| Package | SOT-23 |
| Category | Triode/MOS Tube/Transistor |
| Pins | 3 |
## Electrical characteristics
Limits as printed in the datasheet (page.json `metadata.characteristics` carries them as data).
| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Drain-to-Source Breakdown Voltage | BVDSS | 20 | | | V | VGS=0V, ID=250uA | 3 |
| Zero Gate Voltage Drain Current | IDSS | | | 1 | uA | VDS=20V, VGS=0V | 3 |
| Gate-to-source Leakage Current | IGSS | -100 | | 100 | nA | VDS=0V, VGS=±12V | 3 |
| Gate Threshold Voltage | VGS(TH) | 0.4 | 0.7 | 1 | V | VGS=VDS, ID=250uA | 3 |
| Drain-to-source On-resistance | RDS(on) | | 45 | 55 | mΩ | VGS=4.5V, ID=3A | 3 |
| Drain-to-source On-resistance | RDS(on) | | 62 | 85 | mΩ | VGS=2.5V, ID=2A | 3 |
| Body Diode Forward Voltage | VSD | | | 1.5 | V | VGS=0V, IS=3A | 3 |
| Drain-Source Voltage | BVDSS | | | 20 | V | TA=25℃ | 2 |
| Gate-Source Voltage | VGS | -12 | | 12 | V | TA=25℃ | 2 |
| Continuous Drain Current | ID | | | 3.3 | A | TA=25℃ | 2 |
| Continuous Drain Current | ID | | | 2.1 | A | TA=100℃ | 2 |
| Maximum Power Dissipation | PD | | | 0.9 | mW | TA=25℃ | 2 |
| Pulsed Drain Current | IDM | | | 13.2 | A | TA=25℃ | 2 |
| Operating Junction Temperature | TJ | | | 150 | °C | | 2 |
| Lead Temperature | TL | | | 260 | °C | | 2 |
| Storage Temperature Range | Tstg | -55 | | 150 | °C | | 2 |
| Junction-to-Ambient Thermal Resistance | RθJA | | 138 | | °C/W | Single Operation | 2 |
| Input Capacitance | CISS | | 200 | | pF | VGS=0V, f=1MHz, VDS=10V | 3 |
| Output Capacitance | COSS | | 35 | | pF | VGS=0V, f=1MHz, VDS=10V | 3 |
| Reverse Transfer Capacitance | CRSS | | 28 | | pF | VGS=0V, f=1MHz, VDS=10V | 3 |
| Total Gate Charge | QG(TOT) | | 3 | | nC | VGS=4.5V, VDS=10V, ID=2A | 3 |
| Gate-to-Source Charge | QGS | | 0.5 | | nC | VGS=4.5V, VDS=10V, ID=2A | 3 |
| Gate-to-Drain Charge | QGD | | 0.7 | | nC | VGS=4.5V, VDS=10V, ID=2A | 3 |
| Turn-On Delay Time | td(ON) | | 3 | | ns | VGS=4.5V, VDS=10V, ID=2A, RG=3Ω | 3 |
| Rise Time | tr | | 11 | | ns | VGS=4.5V, VDS=10V, ID=2A, RG=3Ω | 3 |
| Turn-Off Delay Time | td(OFF) | | 20 | | ns | VGS=4.5V, VDS=10V, ID=2A, RG=3Ω | 3 |
| Fall Time | tf | | 8 | | ns | VGS=4.5V, VDS=10V, ID=2A, RG=3Ω | 3 |
## CAD (KiCad official)
- Symbol: `ESJ2302`
- Footprint: `Package_TO_SOT_SMD:SOT-23`
- 3D model: SOT-23 (KiCad packages3D, STEP)
- 3D model files: `esj2302-etched.step` / `esj2302-etched.glb` carry the MPN laser-etched on the die in a toggleable `Adom.LaserEtch` group (Fusion-ready); `esj2302.step` / `esj2302.glb` are the bare package body.
## Provenance
Data extracted from the manufacturer datasheet, not a distributor listing:
- **Datasheet:** [ElecSuper datasheet](docs/esj2302-datasheet.pdf) (7 pp, sha256 `e33f8c1cedaba3fe`, retrieved 2026-10-31, tier: lcsc)
- **Extractor:** parts-factory `2.0.0` / `extract_pins 0.3`, primary `claude-sonnet-5-5` (text), consensus `claude-sonnet-5-5` (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
- **CAD:** KiCad official libraries (CC-BY-SA 4.0).
[Datasheet PDF](docs/esj2302-datasheet.pdf)