main
History Download
Ray Publish 0.1.0 edfe6ce 7d ago

ESJ2302

ElecSuper · MOSFETs · SOT-23

ESJ2302 from ElecSuper, in a SOT-23. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

Pinout

Pin Name Type Function
1 Gate input Gate of the N-channel MOSFET; gate-source voltage limited to ±12 V absolute maximum, with threshold of 0.4 to 1.0 V and ESD protection.
2 Source passive Source of the N-channel MOSFET; continuous drain current is 3.3 A at TA=25℃.
3 Drain passive Drain of the N-channel MOSFET; drain-source breakdown voltage is 20 V minimum, with RDS(on) of 45 mΩ typ at VGS=4.5 V.

Key specifications

Parameter Value
Manufacturer ElecSuper
Package SOT-23
Category Triode/MOS Tube/Transistor
Pins 3

Electrical characteristics

Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).

Parameter Symbol Min Typ Max Unit Conditions Page
Drain-to-Source Breakdown Voltage BVDSS 20 V VGS=0V, ID=250uA 3
Zero Gate Voltage Drain Current IDSS 1 uA VDS=20V, VGS=0V 3
Gate-to-source Leakage Current IGSS -100 100 nA VDS=0V, VGS=±12V 3
Gate Threshold Voltage VGS(TH) 0.4 0.7 1 V VGS=VDS, ID=250uA 3
Drain-to-source On-resistance RDS(on) 45 55 mΩ VGS=4.5V, ID=3A 3
Drain-to-source On-resistance RDS(on) 62 85 mΩ VGS=2.5V, ID=2A 3
Body Diode Forward Voltage VSD 1.5 V VGS=0V, IS=3A 3
Drain-Source Voltage BVDSS 20 V TA=25℃ 2
Gate-Source Voltage VGS -12 12 V TA=25℃ 2
Continuous Drain Current ID 3.3 A TA=25℃ 2
Continuous Drain Current ID 2.1 A TA=100℃ 2
Maximum Power Dissipation PD 0.9 mW TA=25℃ 2
Pulsed Drain Current IDM 13.2 A TA=25℃ 2
Operating Junction Temperature TJ 150 °C 2
Lead Temperature TL 260 °C 2
Storage Temperature Range Tstg -55 150 °C 2
Junction-to-Ambient Thermal Resistance RθJA 138 °C/W Single Operation 2
Input Capacitance CISS 200 pF VGS=0V, f=1MHz, VDS=10V 3
Output Capacitance COSS 35 pF VGS=0V, f=1MHz, VDS=10V 3
Reverse Transfer Capacitance CRSS 28 pF VGS=0V, f=1MHz, VDS=10V 3
Total Gate Charge QG(TOT) 3 nC VGS=4.5V, VDS=10V, ID=2A 3
Gate-to-Source Charge QGS 0.5 nC VGS=4.5V, VDS=10V, ID=2A 3
Gate-to-Drain Charge QGD 0.7 nC VGS=4.5V, VDS=10V, ID=2A 3
Turn-On Delay Time td(ON) 3 ns VGS=4.5V, VDS=10V, ID=2A, RG=3Ω 3
Rise Time tr 11 ns VGS=4.5V, VDS=10V, ID=2A, RG=3Ω 3
Turn-Off Delay Time td(OFF) 20 ns VGS=4.5V, VDS=10V, ID=2A, RG=3Ω 3
Fall Time tf 8 ns VGS=4.5V, VDS=10V, ID=2A, RG=3Ω 3

CAD (KiCad official)

  • Symbol: ESJ2302
  • Footprint: Package_TO_SOT_SMD:SOT-23
  • 3D model: SOT-23 (KiCad packages3D, STEP)
  • 3D model files: esj2302-etched.step / esj2302-etched.glb carry the MPN laser-etched on the die in a toggleable Adom.LaserEtch group (Fusion-ready); esj2302.step / esj2302.glb are the bare package body.

Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

  • Datasheet: ElecSuper datasheet (7 pp, sha256 e33f8c1cedaba3fe, retrieved 2026-10-31, tier: lcsc)
  • Extractor: parts-factory 2.0.0 / extract_pins 0.3, primary claude-sonnet-5-5 (text), consensus claude-sonnet-5-5 (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
  • CAD: KiCad official libraries (CC-BY-SA 4.0).

Datasheet PDF