component
ESJ2301
Public Made by Adomby adom
ElecSuper MOSFETs, SOT-23. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.
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ESJ2301
ElecSuper · MOSFETs · SOT-23
ESJ2301 from ElecSuper, in a SOT-23. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.
Pinout
| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | Gate | input | Gate terminal of the P-channel MOSFET, with a gate-source voltage rating of VGS ±8 V. |
| 2 | Source | passive | Source terminal of the P-channel MOSFET, serving as the reference for the gate-source voltage VGS. |
| 3 | Drain | passive | Drain terminal of the P-channel MOSFET, rated for a drain-source voltage BVDSS of -20 V and a continuous drain current ID of 2.3 A at TA=25°C. |
Key specifications
| Parameter | Value |
|---|---|
| Manufacturer | ElecSuper |
| Package | SOT-23 |
| Category | Transistors/Thyristors |
| Pins | 3 |
Electrical characteristics
Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).
| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Drain-to-Source Breakdown Voltage | BVDSS | -20 | V | VGS=0V, ID=-250uA | 3 | ||
| Zero Gate Voltage Drain Current | IDSS | -1 | uA | VDS=-20V, VGS=0V | 3 | ||
| Gate-to-source Leakage Current | IGSS | -100 | 100 | nA | VDS=0V, VGS=±8V | 3 | |
| Gate Threshold Voltage | VGS(TH) | -0.4 | -0.7 | -1 | V | VGS=VDS, ID=-250uA | 3 |
| Drain-to-source On-resistance | RDS(on) | 90 | 112 | mΩ | VGS=-4.5V, ID=-2.3A | 3 | |
| Drain-to-source On-resistance | RDS(on) | 110 | 142 | mΩ | VGS=-2.5V, ID=-2A | 3 | |
| Total Gate Charge | QG(TOT) | 3.3 | 6 | nC | VGS=-2.5V, VDS=-10V, ID=-2.3A | 3 | |
| Turn-On Delay Time | td(ON) | 11 | 20 | ns | VGS=-4.5V, VDS=10V, RL=10Ω，ID=-1A, RG=1Ω | 3 | |
| Rise Time | tr | 35 | 60 | ns | 3 | ||
| Turn-Off Delay Time | td(OFF) | 30 | 50 | ns | 3 | ||
| Fall Time | tf | 10 | 20 | ns | 3 | ||
| Forward Voltage | VSD | -0.8 | -1.5 | V | VGS=0V, IS=-1.0A | 3 | |
| Drain-Source Voltage | BVDSS | -20 | V | 2 | |||
| Gate-Source Voltage | VGS | -8 | 8 | V | 2 | ||
| Continuous Drain Current | ID | 2.3 | A | TA=25°C | 2 | ||
| Continuous Drain Current | ID | 1.7 | A | TA=75°C | 2 | ||
| Maximum Power Dissipation | PD | 1.4 | W | TA=25°C | 2 | ||
| Maximum Power Dissipation | PD | 0.84 | W | TA=75°C | 2 | ||
| Pulsed Drain Current | IDM | 9.2 | A | 2 | |||
| Operating Junction Temperature | TJ | 150 | °C | 2 | |||
| Storage Temperature Range | Tstg | -55 | 150 | °C | 2 | ||
| Junction-to-Ambient Thermal Resistance | RθJA | 90 | °C/W | Single operation | 2 | ||
| Forward trans conductance | gfs | 6.5 | S | VDS=-5V, ID=-2.3A | 3 | ||
| Input Capacitance | CISS | 405 | pF | VGS=0V, VDS=-10V, f=1MHz | 3 | ||
| Output Capacitance | COSS | 75 | pF | 3 | |||
| Reverse Transfer Capacitance | CRSS | 55 | pF | 3 | |||
| Gate Resistance | Rg | 6 | Ω | f=1MHZ | 3 | ||
| Gate-to-Source Charge | QGS | 0.7 | nC | 3 | |||
| Gate-to-Drain Charge | QGD | 1.3 | nC | 3 |
CAD (KiCad official)
- Symbol:
ESJ2301 - Footprint:
Package_TO_SOT_SMD:SOT-23 - 3D model: SOT-23 (KiCad packages3D, STEP)
- 3D model files:
esj2301-etched.step/esj2301-etched.glbcarry the MPN laser-etched on the die in a toggleableAdom.LaserEtchgroup (Fusion-ready);esj2301.step/esj2301.glbare the bare package body.
Provenance
Data extracted from the manufacturer datasheet, not a distributor listing:
- Datasheet: ElecSuper datasheet (6 pp, sha256
710f9457719deddc, retrieved 2026-10-17, tier: lcsc) - Extractor: parts-factory
2.0.0/extract_pins 0.3, primaryclaude-haiku-5-5(text), consensusclaude-sonnet-5-5(agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish. - CAD: KiCad official libraries (CC-BY-SA 4.0).
# ESJ2301
**ElecSuper** · MOSFETs · SOT-23
ESJ2301 from ElecSuper, in a SOT-23. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.
## Pinout
| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | Gate | input | Gate terminal of the P-channel MOSFET, with a gate-source voltage rating of VGS ±8 V. |
| 2 | Source | passive | Source terminal of the P-channel MOSFET, serving as the reference for the gate-source voltage VGS. |
| 3 | Drain | passive | Drain terminal of the P-channel MOSFET, rated for a drain-source voltage BVDSS of -20 V and a continuous drain current ID of 2.3 A at TA=25°C. |
## Key specifications
| Parameter | Value |
|---|---|
| Manufacturer | ElecSuper |
| Package | SOT-23 |
| Category | Transistors/Thyristors |
| Pins | 3 |
## Electrical characteristics
Limits as printed in the datasheet (page.json `metadata.characteristics` carries them as data).
| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Drain-to-Source Breakdown Voltage | BVDSS | -20 | | | V | VGS=0V, ID=-250uA | 3 |
| Zero Gate Voltage Drain Current | IDSS | | | -1 | uA | VDS=-20V, VGS=0V | 3 |
| Gate-to-source Leakage Current | IGSS | -100 | | 100 | nA | VDS=0V, VGS=±8V | 3 |
| Gate Threshold Voltage | VGS(TH) | -0.4 | -0.7 | -1 | V | VGS=VDS, ID=-250uA | 3 |
| Drain-to-source On-resistance | RDS(on) | | 90 | 112 | mΩ | VGS=-4.5V, ID=-2.3A | 3 |
| Drain-to-source On-resistance | RDS(on) | | 110 | 142 | mΩ | VGS=-2.5V, ID=-2A | 3 |
| Total Gate Charge | QG(TOT) | | 3.3 | 6 | nC | VGS=-2.5V, VDS=-10V, ID=-2.3A | 3 |
| Turn-On Delay Time | td(ON) | | 11 | 20 | ns | VGS=-4.5V, VDS=10V, RL=10Ω，ID=-1A, RG=1Ω | 3 |
| Rise Time | tr | | 35 | 60 | ns | | 3 |
| Turn-Off Delay Time | td(OFF) | | 30 | 50 | ns | | 3 |
| Fall Time | tf | | 10 | 20 | ns | | 3 |
| Forward Voltage | VSD | | -0.8 | -1.5 | V | VGS=0V, IS=-1.0A | 3 |
| Drain-Source Voltage | BVDSS | -20 | | | V | | 2 |
| Gate-Source Voltage | VGS | -8 | | 8 | V | | 2 |
| Continuous Drain Current | ID | | | 2.3 | A | TA=25°C | 2 |
| Continuous Drain Current | ID | | | 1.7 | A | TA=75°C | 2 |
| Maximum Power Dissipation | PD | | | 1.4 | W | TA=25°C | 2 |
| Maximum Power Dissipation | PD | | | 0.84 | W | TA=75°C | 2 |
| Pulsed Drain Current | IDM | | | 9.2 | A | | 2 |
| Operating Junction Temperature | TJ | | | 150 | °C | | 2 |
| Storage Temperature Range | Tstg | -55 | | 150 | °C | | 2 |
| Junction-to-Ambient Thermal Resistance | RθJA | | 90 | | °C/W | Single operation | 2 |
| Forward trans conductance | gfs | | 6.5 | | S | VDS=-5V, ID=-2.3A | 3 |
| Input Capacitance | CISS | | 405 | | pF | VGS=0V, VDS=-10V, f=1MHz | 3 |
| Output Capacitance | COSS | | 75 | | pF | | 3 |
| Reverse Transfer Capacitance | CRSS | | 55 | | pF | | 3 |
| Gate Resistance | Rg | | 6 | | Ω | f=1MHZ | 3 |
| Gate-to-Source Charge | QGS | | 0.7 | | nC | | 3 |
| Gate-to-Drain Charge | QGD | | 1.3 | | nC | | 3 |
## CAD (KiCad official)
- Symbol: `ESJ2301`
- Footprint: `Package_TO_SOT_SMD:SOT-23`
- 3D model: SOT-23 (KiCad packages3D, STEP)
- 3D model files: `esj2301-etched.step` / `esj2301-etched.glb` carry the MPN laser-etched on the die in a toggleable `Adom.LaserEtch` group (Fusion-ready); `esj2301.step` / `esj2301.glb` are the bare package body.
## Provenance
Data extracted from the manufacturer datasheet, not a distributor listing:
- **Datasheet:** [ElecSuper datasheet](https://jlcpcb.com/api/file/downloadByFileSystemAccessId/8590453744564670464) (6 pp, sha256 `710f9457719deddc`, retrieved 2026-10-17, tier: lcsc)
- **Extractor:** parts-factory `2.0.0` / `extract_pins 0.3`, primary `claude-haiku-5-5` (text), consensus `claude-sonnet-5-5` (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
- **CAD:** KiCad official libraries (CC-BY-SA 4.0).
[Datasheet PDF](docs/esj2301-datasheet.pdf)