component
ESGNU04R02
Public Made by Adomby adom
ElecSuper MOSFETs, TO-220. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.
Generated by kicad-footprint-generator · KiCad file format 20260206
| Name | Last updated |
|---|---|
| docs | 13d ago |
| viewers | 13d ago |
| esgnu04r02-etched.glb | 13d ago |
| esgnu04r02-etched.step | 13d ago |
| esgnu04r02-hero.glb | 13d ago |
| esgnu04r02-hero.overlay.json | 13d ago |
| esgnu04r02.glb | 13d ago |
| esgnu04r02.kicad_mod | 13d ago |
| esgnu04r02.kicad_sym | 13d ago |
| esgnu04r02.lbr | 13d ago |
| esgnu04r02.step | 13d ago |
| package.json | 13d ago |
| page.json | 13d ago |
| README.md | 13d ago |
ESGNU04R02
ElecSuper · MOSFETs · TO-220
ESGNU04R02 from ElecSuper, in a TO-220. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.
Pinout
| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | Gate | input | Gate terminal of the N-channel MOSFET; gate-source voltage is rated ±20 V (absolute maximum). |
| 2 | Drain | passive | Drain terminal of the N-channel MOSFET; continuous drain current is rated 140 A at TC=25°C with a drain-source voltage of 40 V. |
| 3 | Source | passive | Source terminal of the N-channel MOSFET, the reference for the gate and drain connections. |
Key specifications
| Parameter | Value |
|---|---|
| Manufacturer | ElecSuper |
| Package | TO-220 |
| Category | Transistors/Thyristors |
| Pins | 3 |
Electrical characteristics
Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).
| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Drain-to-Source Breakdown Voltage | BVDSS | 40 | V | VGS=0V, ID=250uA | 3 | ||
| Zero Gate Voltage Drain Current | IDSS | 1 | uA | VDS=40V, VGS=0V | 3 | ||
| Gate-to-source Leakage Current | IGSS | -100 | 100 | nA | VDS=0V, VGS=±20V | 3 | |
| Gate Threshold Voltage | VGS(TH) | 1 | 2.5 | V | VGS=VDS, ID=250uA | 3 | |
| Drain-to-source On-resistance | RDS(on) | 2 | 2.3 | mΩ | VGS=10V, ID=20A | 3 | |
| Drain-to-source On-resistance | RDS(on) | 3 | 3.8 | mΩ | VGS=4.5V, ID=20A | 3 | |
| Forward Voltage | VSD | 1.5 | V | VGS=0V, IS=20A | 3 | ||
| Drain-Source Voltage | BVDSS | 40 | V | 2 | |||
| Gate-Source Voltage | VGS | -20 | 20 | V | 2 | ||
| Continuous Drain Current | ID | 140 | A | TC=25°C | 2 | ||
| Maximum Power Dissipation | PD | 83 | W | 2 | |||
| Pulsed Drain Current | IDM | 560 | A | 2 | |||
| Single Pulse Avalanche Energy | EAS | 200 | mJ | Starting TJ=25℃, VDD=32V, VG=10V, RG=25Ω, L=0.5mH | 2 | ||
| Operating Junction Temperature | TJ | 150 | °C | 2 | |||
| Lead Temperature | TL | 260 | °C | 2 | |||
| Storage Temperature Range | Tstg | -55 | 150 | °C | 2 | ||
| Junction-to-Case Thermal Resistance | RθJC | 1.5 | °C/W | Single Operation | 2 |
CAD (KiCad official)
- Symbol:
ESGNU04R02 - Footprint:
Package_TO_SOT_THT:TO-220-3_Vertical - 3D model: TO-220 (KiCad packages3D, STEP)
- 3D model files:
esgnu04r02-etched.step/esgnu04r02-etched.glbcarry the MPN laser-etched on the die in a toggleableAdom.LaserEtchgroup (Fusion-ready);esgnu04r02.step/esgnu04r02.glbare the bare package body.
Provenance
Data extracted from the manufacturer datasheet, not a distributor listing:
- Datasheet: ElecSuper datasheet (8 pp, sha256
a65bfd21af71f8e3, retrieved 2026-10-27, tier: lcsc) - Extractor: parts-factory
2.0.0/extract_pins 0.3, primaryclaude-haiku-5-5(text), consensusoff(skipped (clean text read)), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish. - CAD: KiCad official libraries (CC-BY-SA 4.0).