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ESE6050KA

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ElecSuper MOSFETs, TO-252. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.

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docs Publish 0.1.0 · Ray 7d ago
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ese6050ka-etched.glb Publish 0.1.0 · Ray 7d ago
ese6050ka-etched.step ese6050ka: factory component page (tier=lcsc) · Ray 7d ago
ese6050ka-hero.glb ese6050ka: hero GLB from the etched model (keeps the MPN mark) · Ray 7d ago
ese6050ka-hero.overlay.json Publish 0.1.0 · Ray 7d ago
ese6050ka.glb Publish 0.1.0 · Ray 7d ago
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ese6050ka.lbr Publish 0.1.0 · Ray 7d ago
ese6050ka.step Publish 0.1.0 · Ray 7d ago
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ESE6050KA

ElecSuper · MOSFETs · TO-252

ESE6050KA from ElecSuper, in a TO-252. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

Pinout

Pin Name Type Function
1 Gate input Gate terminal of the N-channel MOSFET; gate-source voltage is rated ±20 V (VGS).
2 Drain passive Drain terminal of the N-channel MOSFET; drain-source breakdown voltage BVDSS is 60 V and continuous drain current is 30 A at TC=25°C.
3 Source passive Source terminal of the N-channel MOSFET; serves as the reference for the gate-source voltage rating of ±20 V.

Key specifications

Parameter Value
Manufacturer ElecSuper
Package TO-252
Category Transistors/Thyristors
Pins 3

Electrical characteristics

Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).

Parameter Symbol Min Typ Max Unit Conditions Page
Drain-Source Voltage BVDSS 60 V 2
Gate-Source Voltage VGS -20 20 V 2
Continuous Drain Current ID 30 A TC=25°C 2
Continuous Drain Current ID 20 A TC=100°C 2
Maximum Power Dissipation PD 27.8 W 2
Pulsed Drain Current IDM 120 A 2
Avalanche Current, Single Pulsed IAS 16.5 A Note a: Tj=25℃, VDD=30V, VG=10V, L=0.5mH, Rg=25Ω 2
Avalanche Energy, Single Pulsed EAS 68 mJ Note a: Tj=25℃, VDD=30V, VG=10V, L=0.5mH, Rg=25Ω 2
Operating Junction Temperature TJ 150 °C 2
Lead Temperature TL 260 °C 2
Storage Temperature Range Tstg -55 150 °C 2
Drain-to-Source Breakdown Voltage BVDSS 60 V VGS=0V, ID=250uA 3
Zero Gate Voltage Drain Current IDSS 1 uA VDS=60V, VGS=0V 3
Gate-to-source Leakage Current IGSS -100 100 nA VDS=0V, VGS=±20V 3
Gate Threshold Voltage VGS(TH) 1 1.6 2.5 V VGS=VDS, ID=250uA 3
Drain-to-source On-resistance RDS(on) 14 18 mΩ VGS=10V, ID=20A 3
Drain-to-source On-resistance RDS(on) 18 25 mΩ VGS=4.5V, ID=10A 3
Forward Voltage VSD 1.5 V VGS=0V, IS=20A 3
Forward transconductance gfs 100 S VDS=5V, ID=20A 3
Input Capacitance CISS 930 pF VGS=0V, f=1MHz, VDS=25V 3
Output Capacitance COSS 230 pF VGS=0V, f=1MHz, VDS=25V 3
Reverse Transfer Capacitance CRSS 10 pF VGS=0V, f=1MHz, VDS=25V 3
Total Gate Charge QG(TOT) 22 nC VGS=10V, VDS=30V, ID=20A 3
Gate-to-Source Charge QGS 4.5 nC VGS=10V, VDS=30V, ID=20A 3
Gate-to-Drain Charge QGD 3.5 nC VGS=10V, VDS=30V, ID=20A 3
Turn-On Delay Time td(ON) 4.5 ns VGS=10V, VDS=30V, ID=20A, RG=1.6Ω 3
Rise Time tr 3 ns VGS=10V, VDS=30V, ID=20A, RG=1.6Ω 3
Turn-Off Delay Time td(OFF) 14 ns VGS=10V, VDS=30V, ID=20A, RG=1.6Ω 3
Fall Time tf 2.7 ns VGS=10V, VDS=30V, ID=20A, RG=1.6Ω 3
Junction-to-Case Thermal Resistance RθJC 4.5 °C/W Single Operation 2

CAD (KiCad official)

  • Symbol: ESE6050KA
  • Footprint: Package_TO_SOT_SMD:TO-252-2
  • 3D model: TO-252 (KiCad packages3D, STEP)
  • 3D model files: ese6050ka-etched.step / ese6050ka-etched.glb carry the MPN laser-etched on the die in a toggleable Adom.LaserEtch group (Fusion-ready); ese6050ka.step / ese6050ka.glb are the bare package body.

Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

  • Datasheet: ElecSuper datasheet (5 pp, sha256 e54942fcfe9c205c, retrieved 2026-10-18, tier: lcsc)
  • Extractor: parts-factory 2.0.0 / extract_pins 0.3, primary claude-haiku-5-5 (text), consensus claude-sonnet-5-5 (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
  • CAD: KiCad official libraries (CC-BY-SA 4.0).

Datasheet PDF