main
Download ZIP Propose a change
Generated by kicad-footprint-generator · KiCad file format 20260206
Name Last commit message Last updated
docs Publish 0.1.0 · Ray 17d ago
viewers ese0117k: viewers · Ray 17d ago
ese0117k-etched.glb Publish 0.1.0 · Ray 17d ago
ese0117k-etched.step ese0117k: factory component page (tier=lcsc) · Ray 17d ago
ese0117k-hero.glb ese0117k: hero GLB from the etched model (keeps the MPN mark) · Ray 17d ago
ese0117k-hero.overlay.json Publish 0.1.0 · Ray 17d ago
ese0117k.glb Publish 0.1.0 · Ray 17d ago
ese0117k.kicad_mod Publish 0.1.0 · Ray 17d ago
ese0117k.kicad_sym Publish 0.1.0 · Ray 17d ago
ese0117k.lbr Publish 0.1.0 · Ray 17d ago
ese0117k.step Publish 0.1.0 · Ray 17d ago
package.json Publish 0.1.0 · Ray 17d ago
page.json Set visibility: public · Ray 17d ago
README.md Publish 0.1.0 · Ray 17d ago

ESE0117K

ElecSuper · MOSFETs · TO-252

ESE0117K from ElecSuper, in a TO-252. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

Pinout

Pin Name Type Function
1 Gate input Gate terminal of the N-channel MOSFET, with the gate-source voltage rated at ±20 V (VGS).
2 Drain passive Drain terminal of the N-channel MOSFET, rated for 100 V drain-source voltage (BVDSS) and 18 A continuous drain current at TC=25°C.
3 Source passive Source terminal of the N-channel MOSFET, serving as the reference for the ±20 V gate-source rating.

Key specifications

Parameter Value
Manufacturer ElecSuper
Package TO-252
Category Transistors/Thyristors
Pins 3

Electrical characteristics

Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).

Parameter Symbol Min Typ Max Unit Conditions Page
Drain-to-Source Breakdown Voltage BVDSS 100 V VGS=0V, ID=250uA 3
Zero Gate Voltage Drain Current IDSS 1 uA VDS=100V, VGS=0V 3
Gate-to-source Leakage Current IGSS -100 100 nA VDS=0V, VGS=±20V 3
Gate Threshold Voltage VGS(TH) 1 1.5 2.2 V VGS=VDS, ID=250uA 3
Drain-to-source On-resistance RDS(on) 37 48 mΩ VGS=10V, ID=10A 3
Drain-to-source On-resistance RDS(on) 39 55 mΩ VGS=4.5V, ID=6A 3
Forward Voltage VSD 1.5 V VGS=0V, IS=10A 3
Drain-Source Voltage BVDSS 100 V 2
Gate-Source Voltage VGS -20 20 V 2
Continuous Drain Current ID 18 A TC=25°C 2
Continuous Drain Current ID 14 A TC=75°C 2
Maximum Power Dissipation PD 35 W 2
Pulsed Drain Current IDM 72 A 2
Operating Junction Temperature TJ 150 °C 2
Lead Temperature TL 260 °C 2
Storage Temperature Range Tstg -55 150 °C 2
Junction-to-Case Thermal Resistance RθJC 3.6 °C/W Single Operation 2

CAD (KiCad official)

  • Symbol: ESE0117K
  • Footprint: Package_TO_SOT_SMD:TO-252-2
  • 3D model: TO-252 (KiCad packages3D, STEP)
  • 3D model files: ese0117k-etched.step / ese0117k-etched.glb carry the MPN laser-etched on the die in a toggleable Adom.LaserEtch group (Fusion-ready); ese0117k.step / ese0117k.glb are the bare package body.

Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

  • Datasheet: ElecSuper datasheet (9 pp, sha256 f2cb5f8f84a6dbdd, retrieved 2026-10-18, tier: lcsc)
  • Extractor: parts-factory 2.0.0 / extract_pins 0.3, primary claude-haiku-5-5 (text), consensus claude-sonnet-5-5 (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
  • CAD: KiCad official libraries (CC-BY-SA 4.0).

Datasheet PDF