component
ESE0117K
Public Made by Adomby adom
ElecSuper MOSFETs, TO-252. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.
Generated by kicad-footprint-generator · KiCad file format 20260206
| Name | Last updated |
|---|---|
| docs | 17d ago |
| viewers | 17d ago |
| ese0117k-etched.glb | 17d ago |
| ese0117k-etched.step | 17d ago |
| ese0117k-hero.glb | 17d ago |
| ese0117k-hero.overlay.json | 17d ago |
| ese0117k.glb | 17d ago |
| ese0117k.kicad_mod | 17d ago |
| ese0117k.kicad_sym | 17d ago |
| ese0117k.lbr | 17d ago |
| ese0117k.step | 17d ago |
| package.json | 17d ago |
| page.json | 17d ago |
| README.md | 17d ago |
ESE0117K
ElecSuper · MOSFETs · TO-252
ESE0117K from ElecSuper, in a TO-252. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.
Pinout
| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | Gate | input | Gate terminal of the N-channel MOSFET, with the gate-source voltage rated at ±20 V (VGS). |
| 2 | Drain | passive | Drain terminal of the N-channel MOSFET, rated for 100 V drain-source voltage (BVDSS) and 18 A continuous drain current at TC=25°C. |
| 3 | Source | passive | Source terminal of the N-channel MOSFET, serving as the reference for the ±20 V gate-source rating. |
Key specifications
| Parameter | Value |
|---|---|
| Manufacturer | ElecSuper |
| Package | TO-252 |
| Category | Transistors/Thyristors |
| Pins | 3 |
Electrical characteristics
Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).
| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Drain-to-Source Breakdown Voltage | BVDSS | 100 | V | VGS=0V, ID=250uA | 3 | ||
| Zero Gate Voltage Drain Current | IDSS | 1 | uA | VDS=100V, VGS=0V | 3 | ||
| Gate-to-source Leakage Current | IGSS | -100 | 100 | nA | VDS=0V, VGS=±20V | 3 | |
| Gate Threshold Voltage | VGS(TH) | 1 | 1.5 | 2.2 | V | VGS=VDS, ID=250uA | 3 |
| Drain-to-source On-resistance | RDS(on) | 37 | 48 | mΩ | VGS=10V, ID=10A | 3 | |
| Drain-to-source On-resistance | RDS(on) | 39 | 55 | mΩ | VGS=4.5V, ID=6A | 3 | |
| Forward Voltage | VSD | 1.5 | V | VGS=0V, IS=10A | 3 | ||
| Drain-Source Voltage | BVDSS | 100 | V | 2 | |||
| Gate-Source Voltage | VGS | -20 | 20 | V | 2 | ||
| Continuous Drain Current | ID | 18 | A | TC=25°C | 2 | ||
| Continuous Drain Current | ID | 14 | A | TC=75°C | 2 | ||
| Maximum Power Dissipation | PD | 35 | W | 2 | |||
| Pulsed Drain Current | IDM | 72 | A | 2 | |||
| Operating Junction Temperature | TJ | 150 | °C | 2 | |||
| Lead Temperature | TL | 260 | °C | 2 | |||
| Storage Temperature Range | Tstg | -55 | 150 | °C | 2 | ||
| Junction-to-Case Thermal Resistance | RθJC | 3.6 | °C/W | Single Operation | 2 |
CAD (KiCad official)
- Symbol:
ESE0117K - Footprint:
Package_TO_SOT_SMD:TO-252-2 - 3D model: TO-252 (KiCad packages3D, STEP)
- 3D model files:
ese0117k-etched.step/ese0117k-etched.glbcarry the MPN laser-etched on the die in a toggleableAdom.LaserEtchgroup (Fusion-ready);ese0117k.step/ese0117k.glbare the bare package body.
Provenance
Data extracted from the manufacturer datasheet, not a distributor listing:
- Datasheet: ElecSuper datasheet (9 pp, sha256
f2cb5f8f84a6dbdd, retrieved 2026-10-18, tier: lcsc) - Extractor: parts-factory
2.0.0/extract_pins 0.3, primaryclaude-haiku-5-5(text), consensusclaude-sonnet-5-5(agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish. - CAD: KiCad official libraries (CC-BY-SA 4.0).