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ESDU5V0H3

Changjing · ESD And Surge Protection (TVS/ESD) · SOT-23-6L

ESDU5V0H3 from Changjing, in a SOT-23-6L. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

Pinout

Pin Name Type Function
1 I/O1 passive Protected line 1 (I/O1), internally connected to pin 6; I/O-to-GND reverse standoff 5V max, junction capacitance 0.8pF max.
2 GND power_in Ground reference for the uni-directional ESD diodes; I/O-to-GND clamping is 13V max at IPP=1A and 25V max at IPP=3.5A (8/20µs).
3 I/O2 passive Protected line 2 (I/O2), internally connected to pin 4; I/O-to-I/O capacitance 0.4pF max.
4 I/O2 passive Protected line 2 (I/O2), internally connected to pin 3; IEC 61000-4-2 ±25kV air and contact ESD rating.
5 VCC power_in Positive rail of the steering diodes; VCC-to-GND breakdown is 5V min to 12V max at IT=1mA and leakage is 1µA max at VRWM=5V.
6 I/O1 passive Protected line 1 (I/O1), internally connected to pin 1; peak pulse current 3.5A (8/20µs).

Key specifications

Parameter Value
Manufacturer Changjing
Package SOT-23-6L
Category Circuit Protection
Pins 6

Electrical characteristics

Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).

Parameter Symbol Min Typ Max Unit Conditions Page
ESD Voltage IEC 61000-4-2 Air Model VESD(1) -25 25 kV IEC 61000-4-2 Air Model, ten non-repetitive pulses 2
ESD Voltage IEC 61000-4-2 Contact Model VESD(1) -25 25 kV IEC 61000-4-2 Contact Model, ten non-repetitive pulses 2
ESD Voltage Per Human Body Model -16 16 kV JESD22-A114-B 2
ESD Voltage Machine Model -0.4 0.4 kV Machine Model 2
Peak Pulse Power PPP(2) 90 W Non-repetitive 8/20µs exponential decay waveform per IEC61000-4-5 2
Peak Pulse Current IPP(2) 3.5 A Non-repetitive 8/20µs exponential decay waveform per IEC61000-4-5 2
Lead Solder Temperature Maximum TL 260 ℃ 10 second duration 2
Operation Junction and Storage Temperature Range TJ,Tstg -55 150 ℃ 2
Reverse stand off voltage VRWM 5 V 3
Breakdown voltage V(BR) 6 10 V IT=1mA 3
Breakdown voltage VCC to GND V(BR) 5 12 V IT=1mA VCC to GND 3
Reverse leakage current IR 1 μA VRWM=5V (I/O to GND & VCC to GND) 3
Forward voltage VF 0.4 1.5 V IF=10mA (GND to I/O & GND to VCC) 3
Clamping voltage VC 13 V IPP=1A (I/O to GND & VCC to GND) 3
Clamping voltage VC 25 V IPP=3.5A (I/O to GND & VCC to GND) 3
Junction capacitance CJ 0.8 pF VR=0V,f=1MHz 3
Junction capacitance I/O to I/O CJ 0.4 pF VR=0V,f=1MHz, I/O to I/O 3

CAD (KiCad official)

  • Symbol: ESDU5V0H3
  • Footprint: Package_TO_SOT_SMD:SOT-23-6
  • 3D model: SOT-23-6L (KiCad packages3D, STEP)
  • 3D model files: esdu5v0h3-etched.step / esdu5v0h3-etched.glb carry the MPN laser-etched on the die in a toggleable Adom.LaserEtch group (Fusion-ready); esdu5v0h3.step / esdu5v0h3.glb are the bare package body.

Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

  • Datasheet: Changjing datasheet (6 pp, sha256 d5e418d1c5e3762b, retrieved 2026-10-19, tier: lcsc)
  • Extractor: parts-factory 2.0.0 / extract_pins 0.3, primary claude-sonnet-5-5 (text+vision), consensus claude-opus-5-5 (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
  • CAD: KiCad official libraries (CC-BY-SA 4.0).

Datasheet PDF