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ESDU5V0G3

Changjing · ESD And Surge Protection (TVS/ESD) · SOT-143

ESDU5V0G3 from Changjing, in a SOT-143. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

Pinout

Pin Name Type Function
1 GND power_in Ground reference pin of the ESD protection diode, with I/O-to-GND reverse standoff voltage of 5 V (VRWM) and forward voltage of 0.4 to 1.5 V (typ to max) at IF=10 mA from GND to I/O.
2 I/O passive Protected line input/output (channel 2), clamped to GND with VRWM 5 V, leakage 1 µA max at 5 V, and 0.8 pF max capacitance (0.4 pF max I/O to I/O).
3 I/O passive Protected line input/output (channel 1), clamped to GND with VRWM 5 V, leakage 1 µA max at 5 V, and 0.8 pF max capacitance (0.4 pF max I/O to I/O).
4 VCC power_in Supply/rail steering pin (VCC or VDD) protected to GND with breakdown voltage 5 to 12 V at IT=1 mA and clamping voltage 13 V at IPP=1 A and 25 V at IPP=3.5 A.

Key specifications

Parameter Value
Manufacturer Changjing
Package SOT-143
Category Circuit Protection
Pins 4

Electrical characteristics

Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).

Parameter Symbol Min Typ Max Unit Conditions Page
ESD voltage, IEC 61000-4-2 air model -25 25 kV IEC 61000-4-2 air discharge 2
ESD voltage, IEC 61000-4-2 contact model -25 25 kV IEC 61000-4-2 contact discharge 2
ESD voltage, JESD22-A114-B human body model -16 16 kV JESD22-A114-B human body model 2
ESD voltage, machine model VESD(1) -0.4 0.4 kV Device stressed with ten non-repetitive ESD pulses (note 1) 2
Peak pulse power PPP(2) 90 W Non-repetitive current pulse 8/20µs exponential decay waveform per IEC61000-4-5 (note 2) 2
Peak pulse current IPP(2) 3.5 A Non-repetitive current pulse 8/20µs exponential decay waveform per IEC61000-4-5 (note 2) 2
Lead solder temperature, maximum TL 260 ℃ 10 second duration 2
Storage temperature range TJ,Tstg -55 150 ℃ 2
Reverse stand-off voltage (per channel) VRWM 5 V 3
Breakdown voltage, I/O V(BR) 6 10 V IT=1mA 3
Breakdown voltage, VCC to GND V(BR) 5 12 V IT=1mA VCC to GND 3
Reverse leakage current IR 1 μA VRWM=5V (I/O to GND & VCC to GND) 3
Forward voltage VF 0.4 1.5 V IF=10mA (GND to I/O & GND to VCC) 3
Clamping voltage at 1 A peak pulse VC 13 V IPP=1A (I/O to GND & VCC to GND) 3
Clamping voltage at 3.5 A peak pulse VC 25 V IPP=3.5A (I/O to GND & VCC to GND) 3
Junction capacitance CJ 0.8 pF VR=0V,f=1MHz 3
Junction capacitance, I/O to I/O CJ 0.4 pF VR=0V,f=1MHz, I/O to I/O 3

CAD (KiCad official)

  • Symbol: ESDU5V0G3
  • Footprint: Package_TO_SOT_SMD:SOT-143
  • 3D model: SOT-143 (KiCad packages3D, STEP)
  • 3D model files: esdu5v0g3-etched.step / esdu5v0g3-etched.glb carry the MPN laser-etched on the die in a toggleable Adom.LaserEtch group (Fusion-ready); esdu5v0g3.step / esdu5v0g3.glb are the bare package body.

Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

  • Datasheet: Changjing datasheet (6 pp, sha256 869ef23aabe46969, retrieved 2026-10-22, tier: lcsc)
  • Extractor: parts-factory 2.0.0 / extract_pins 0.3, primary claude-sonnet-5-5 (text+vision), consensus claude-opus-5-5 (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
  • CAD: KiCad official libraries (CC-BY-SA 4.0).

Datasheet PDF