component
ESDS452DBZRQ1
Public Made by Adomby adom
Texas Instruments , SOT-23. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.
Generated by kicad-footprint-generator · KiCad file format 20260206
| Name | Last updated |
|---|---|
| docs | 6d ago |
| viewers | 6d ago |
| esds452dbzrq1-etched.glb | 6d ago |
| esds452dbzrq1-etched.step | 6d ago |
| esds452dbzrq1-hero.glb | 6d ago |
| esds452dbzrq1-hero.overlay.json | 6d ago |
| esds452dbzrq1.glb | 6d ago |
| esds452dbzrq1.kicad_mod | 6d ago |
| esds452dbzrq1.kicad_sym | 6d ago |
| esds452dbzrq1.lbr | 6d ago |
| esds452dbzrq1.step | 6d ago |
| package.json | 6d ago |
| page.json | 6d ago |
| README.md | 6d ago |
ESDS452DBZRQ1
Texas Instruments · IC · SOT-23
ESDS452DBZRQ1 from Texas Instruments, in a SOT-23. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.
Pinout
| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | IO | passive | Surge and ESD protected IO pin rated for ±5.5V working voltage (IEC 61000-4-2 ±30kV contact/air, 18A 8/20µs surge), connected to the protected signal or power line. |
| 2 | IO | passive | Surge and ESD protected IO pin rated for ±5.5V working voltage (IEC 61000-4-2 ±30kV contact/air, 18A 8/20µs surge), connected to the protected signal or power line. |
| 3 | GND | power_in | Ground pin, connect to ground. |
Key specifications
| Parameter | Value |
|---|---|
| Manufacturer | Texas Instruments |
| Package | SOT-23 |
| Category | |
| Pins | 3 |
Electrical characteristics
Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).
| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Peak pulse power, IEC 61000-4-5 surge (tp = 8/20 µs) | PPPM | 172 | W | at 25 °C | 3 | ||
| Peak pulse current, IEC 61000-4-5 surge (tp = 8/20 µs) | IPPM | 18 | A | at 25 °C | 3 | ||
| Operating free-air temperature | TA | -55 | 150 | °C | 3 | ||
| Storage temperature | Tstg | -65 | 155 | °C | 3 | ||
| Input voltage | VIN | -5.5 | 5.5 | V | 3 | ||
| Operating free-air temperature | TA | -55 | 150 | °C | 3 | ||
| Reverse stand-off voltage | VRWM | -5.5 | 5.5 | V | IIO < 50nA | 4 | |
| Leakage current at VRWM | ILEAK | 1 | 50 | nA | VIO = ±5.5 V, I/O to GND and GND to I/O | 4 | |
| Breakdown voltage, I/O to GND | VBR | 7 | 8 | 9 | V | IIO = ±1mA | 4 |
| Surge clamping voltage, tp = 8/20µs | VCLAMP | 7.5 | 10 | V | IPP = ±1A, I/O to GND | 4 | |
| Surge clamping voltage, tp = 8/20µs | VCLAMP | 11.5 | 14 | V | IPP = ±15A, I/O to GND | 4 | |
| Line capacitance, IO to GND | CLINE | 3 | 5 | pF | VIO = 0 V, f = 1MHz | 4 | |
| TLP clamping voltage, tp = 100ns | VCLAMP | 9.6 | V | IPP = ±16A, I/O to GND | 4 | ||
| Dynamic resistance (8/20µs) | RDYN | 0.29 | Ω | I/O to GND | 4 | ||
| Junction-to-ambient thermal resistance | RθJA | 309.5 | °C/W | 4 | |||
| Junction-to-case (top) thermal resistance | RθJC(top) | 162.4 | °C/W | 4 | |||
| Junction-to-board thermal resistance | RθJB | 149 | °C/W | 4 | |||
| Junction-to-top characterization parameter | ΨJT | 41 | °C/W | 4 | |||
| Junction-to-board characterization parameter | ΨJB | 147.9 | °C/W | 4 |
CAD (KiCad official)
- Symbol:
ESDS452DBZRQ1 - Footprint:
Package_TO_SOT_SMD:SOT-23 - 3D model: SOT-23 (KiCad packages3D, STEP)
- 3D model files:
esds452dbzrq1-etched.step/esds452dbzrq1-etched.glbcarry the MPN laser-etched on the die in a toggleableAdom.LaserEtchgroup (Fusion-ready);esds452dbzrq1.step/esds452dbzrq1.glbare the bare package body.
Provenance
Data extracted from the manufacturer datasheet, not a distributor listing:
- Datasheet: Texas Instruments datasheet (16 pp, sha256
8ca6a7cb2eaa21ca, retrieved 2026-10-17, tier: lcsc) - Extractor: parts-factory
2.0.0/extract_pins 0.3, primaryclaude-haiku-5-5(text), consensusclaude-sonnet-5-5(agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish. - CAD: KiCad official libraries (CC-BY-SA 4.0).