component
ESD8D5.0C-V2-HXY
Public Made by Adomby adom
HXY MOSFET ESD Protection Devices, DFN1006-2L. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.
3D Model
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Symbol & Footprint
Schematic Symbol
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PCB Footprint
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Datasheet
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README
markdownESD8D5.0C-V2-HXY
HXY MOSFET · ESD Protection Devices · DFN1006-2L
ESD8D5.0C-V2-HXY from HXY MOSFET, in a DFN1006-2L. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.
Pinout
| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | 1 | passive | Terminal 1 of the bi-directional ESD protection diode (VRWM 3.5 V, VBR 5.6 V min at 1 mA); the device is symmetric so either terminal connects to the protected line or to ground. |
| 2 | 2 | passive | Terminal 2 of the bi-directional ESD protection diode (IEC61000-4-2 ±25 kV air, ±20 kV contact); the device is symmetric so either terminal connects to the protected line or to ground. |
Key specifications
| Parameter | Value |
|---|---|
| Manufacturer | HXY MOSFET |
| Package | DFN1006-2L |
| Category | TVS/Fuse/Board Level Protection |
| Pins | 2 |
Electrical characteristics
Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).
| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Reverse working voltage | VRWM | 5 | V | 2 | |||
| Reverse leakage current 1 | IR1 | 0.3 | µA | @ VRWM | 2 | ||
| Reverse leakage current 2 | IR2 | 0.5 | µA | @ VR = 3.5V | 2 | ||
| Breakdown voltage | VBR | 5.6 | V | @ IT = 1.0 mA | 2 | ||
| Capacitance | C | 8.5 | 10 | pF | 2 | ||
| Clamping voltage | VC | 8 | V | @ IPP = 1 A | 2 | ||
| Clamping voltage at max IPP | VC | 12 | V | @ MAX IPP | 2 | ||
| Peak pulse current | IPP | 5.5 | A | 2 | |||
| Peak pulse power | PPK | 66 | W | 2 | |||
| Peak Pulse Power | PPP | 66 | W | tp = 8/20μs, Tamb=25°C | 1 | ||
| Maximum lead temperature for soldering | TL | 260 | °C | during 10s | 1 | ||
| Storage Temperature Range | Tstg | -55 | 150 | °C | 1 | ||
| Operating Temperature Range | Top | -40 | 125 | °C | 1 | ||
| Maximum junction temperature | Tj | 150 | °C | 1 | |||
| IEC61000-4-2 ESD air discharge | -25 | 25 | KV | air discharge | 1 | ||
| IEC61000-4-2 ESD contact discharge | -20 | 20 | KV | contact discharge | 1 |
CAD (KiCad official)
- Symbol:
ESD8D5.0C-V2-HXY - Footprint:
Diode_SMD:D_SOD-882 - 3D model: DFN1006-2L (KiCad packages3D, STEP)
- 3D model files:
esd8d5-0c-v2-hxy-etched.step/esd8d5-0c-v2-hxy-etched.glbcarry the MPN laser-etched on the die in a toggleableAdom.LaserEtchgroup (Fusion-ready);esd8d5-0c-v2-hxy.step/esd8d5-0c-v2-hxy.glbare the bare package body.
Provenance
Data extracted from the manufacturer datasheet, not a distributor listing:
- Datasheet: HXY MOSFET datasheet (4 pp, sha256
fa33bb1347f58877, retrieved 2026-10-22, tier: lcsc) - Extractor: parts-factory
2.0.0/extract_pins 0.3, primaryclaude-sonnet-5-5(text), consensusclaude-sonnet-5-5(agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish. - CAD: KiCad official libraries (CC-BY-SA 4.0).