component
ESD8D3.3C-HXY
Public Made by Adomby adom
HXY MOSFET ESD Protection Devices, DFN1006-2. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.
3D Model
Open in new tab ↗
Loads when you scroll to it. Unloads after 5 minutes in the background.
Symbol & Footprint
Schematic Symbol
Open full view ↗Loads when you scroll to it. Unloads after 5 minutes in the background.
PCB Footprint
Open full view ↗Loads when you scroll to it. Unloads after 5 minutes in the background.
Datasheet
Open in new tab ↗Loads when you scroll to it. Unloads after 5 minutes in the background.
README
markdownESD8D3.3C-HXY
HXY MOSFET · ESD Protection Devices · DFN1006-2
ESD8D3.3C-HXY from HXY MOSFET, in a DFN1006-2. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.
Pinout
| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | 1 | passive | Terminal 1 of the single bi-directional ESD protection diode (VRWM 3.3 V max, VC 11 V max at IPP 9 A, 8/20 µs); connect to the protected line or to ground, since the part is symmetric. |
| 2 | 2 | passive | Terminal 2 of the single bi-directional ESD protection diode (VRWM 3.3 V max, VC 11 V max at IPP 9 A, 8/20 µs); connect to the protected line or to ground, since the part is symmetric. |
Key specifications
| Parameter | Value |
|---|---|
| Manufacturer | HXY MOSFET |
| Package | DFN1006-2 |
| Category | TVS/Fuse/Board Level Protection |
| Pins | 2 |
Electrical characteristics
Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).
| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Reverse working voltage | VRWM | 3.3 | V | 2 | |||
| Breakdown voltage | VBR | 5 | V | @ IT = 1.0 mA (Note 1) | 2 | ||
| Reverse leakage current | IR | 0.05 | µA | @ VRWM | 2 | ||
| Clamping voltage | VC | 6.5 | V | @ IPP = 1 A (Note 2) | 2 | ||
| Clamping voltage at max IPP | VC | 11 | V | @ MAX IPP (Note 2) | 2 | ||
| Peak pulse current | IPP | 9 | A | Note 2, 8/20 µs | 2 | ||
| Peak pulse power | PPK | 100 | W | Note 2 | 2 | ||
| Junction capacitance | C | 7 | 15 | pF | 2 | ||
| Dynamic resistance | RDYN | 0.2 | Ω | @ tp = 100 ns (TLP) | 2 | ||
| Peak pulse power | PPP | 100 | W | tp = 8/20 µs, Tamb=25°C | 1 | ||
| Maximum lead temperature for soldering | TL | 260 | °C | 10 s | 1 | ||
| Storage temperature range | Tstg | -55 | 150 | °C | 1 | ||
| Operating temperature range | Top | -55 | 150 | °C | 1 | ||
| Maximum junction temperature | Tj | 150 | °C | 1 | |||
| ESD air discharge | -30 | 30 | KV | IEC61000-4-2 air discharge | 1 | ||
| ESD contact discharge | -30 | 30 | KV | IEC61000-4-2 contact discharge | 1 | ||
| EFT | 40 | A | IEC61000-4-4 (EFT) | 1 |
CAD (KiCad official)
- Symbol:
ESD8D3.3C-HXY - Footprint:
Diode_SMD:D_SOD-882 - 3D model: DFN1006-2 (KiCad packages3D, STEP)
- 3D model files:
esd8d3-3c-hxy-etched.step/esd8d3-3c-hxy-etched.glbcarry the MPN laser-etched on the die in a toggleableAdom.LaserEtchgroup (Fusion-ready);esd8d3-3c-hxy.step/esd8d3-3c-hxy.glbare the bare package body.
Provenance
Data extracted from the manufacturer datasheet, not a distributor listing:
- Datasheet: HXY MOSFET datasheet (4 pp, sha256
2cf5cf5ab7cb74c3, retrieved 2026-10-22, tier: lcsc) - Extractor: parts-factory
2.0.0/extract_pins 0.3, primaryclaude-sonnet-5-5(text), consensusclaude-sonnet-5-5(agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish. - CAD: KiCad official libraries (CC-BY-SA 4.0).