component
ESD5V0LB-HXY
Public Made by Adomby adom
HXY MOSFET ESD And Surge Protection (TVS/ESD), DFN1006-2L. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.
3D Model
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Symbol & Footprint
Schematic Symbol
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PCB Footprint
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Datasheet
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README
markdownESD5V0LB-HXY
HXY MOSFET · ESD And Surge Protection (TVS/ESD) · DFN1006-2L
ESD5V0LB-HXY from HXY MOSFET, in a DFN1006-2L. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.
Pinout
| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | 1 | passive | Bidirectional ESD protection line terminal (signal line to be protected), with 5.0V reverse working voltage and 10.5V clamping at IPP=100A (8/20μs). |
| 2 | 2 | passive | Second terminal of the bidirectional ESD protection diode, connected to the other side (typically ground) of the protected line; rated for ±30kV IEC 61000-4-2 contact/air discharge. |
Key specifications
| Parameter | Value |
|---|---|
| Manufacturer | HXY MOSFET |
| Package | DFN1006-2L |
| Category | Circuit Protection |
| Pins | 2 |
Electrical characteristics
Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).
| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Reverse Working Voltage | VRWM | 5 | V | 2 | |||
| Breakdown Voltage | VBR | 5.8 | 7 | 7.5 | V | IT=1mA | 2 |
| Leakage Current | IR | 100 | nA | VRWM=5.0V | 2 | ||
| Clamping Voltage | VC | 9 | V | IPP=50A,Tp=8/20μs | 2 | ||
| Clamping Voltage | VC | 9 | 10.5 | V | IPP=100A,Tp=8/20μs | 2 | |
| Junction Capacitance | CJ | 200 | 250 | pF | VR=0V, f=1MHz | 2 | |
| Peak Pulse Power | PPPM | 1000 | W | tp = 8/20μs | 2 | ||
| Peak Pulse Current | IPPM | 100 | A | tp = 8/20μs | 2 | ||
| Maximum lead temperature for soldering | TL | 260 | °C | during 10s | 2 | ||
| Storage Temperature Range | Tstg | -55 | 150 | °C | 2 | ||
| Operating Temperature Range | TOP | -40 | 125 | °C | 2 | ||
| Maximum junction temperature | Tj | 150 | °C | 2 | |||
| ESD voltage IEC 61000-4-2 (air discharge) | VESD | 30 | kV | 2 | |||
| ESD voltage IEC 61000-4-2 (contact discharge) | VESD | 30 | kV | 2 |
CAD (KiCad official)
- Symbol:
ESD5V0LB-HXY - Footprint:
Diode_SMD:D_SOD-882 - 3D model: DFN1006-2L (KiCad packages3D, STEP)
- 3D model files:
esd5v0lb-hxy-etched.step/esd5v0lb-hxy-etched.glbcarry the MPN laser-etched on the die in a toggleableAdom.LaserEtchgroup (Fusion-ready);esd5v0lb-hxy.step/esd5v0lb-hxy.glbare the bare package body.
Provenance
Data extracted from the manufacturer datasheet, not a distributor listing:
- Datasheet: HXY MOSFET datasheet (5 pp, sha256
8b7c03ff5ac89f84, retrieved 2026-10-23, tier: lcsc) - Extractor: parts-factory
2.0.0/extract_pins 0.3, primaryclaude-sonnet-5-5(text), consensusclaude-sonnet-5-5(agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish. - CAD: KiCad official libraries (CC-BY-SA 4.0).