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Contents

README

markdown

ESD562DBZR

TI(德州仪器) · Global Sourcing Parts · SOT-23

ESD562DBZR from TI(德州仪器), in a SOT-23. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

Pinout

Pin Name Type Function
1 IO 1 bidirectional Surge and ESD protected I/O, rated for -12 V to 12 V reverse stand-off (VRWM), with 1.5 pF typical line capacitance and IEC 61000-4-2 ratings of ±22 kV contact and ±30 kV air discharge.
2 IO 2 bidirectional Surge and ESD protected I/O, rated for -12 V to 12 V reverse stand-off (VRWM), with 1.5 pF typical line capacitance and IEC 61000-4-2 ratings of ±22 kV contact and ±30 kV air discharge.
3 GND power_in Ground pin; connect to ground.

Key specifications

Parameter Value
Manufacturer TI(德州仪器)
Package SOT-23
Category Global Sourcing Parts
Pins 3

Electrical characteristics

Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).

Parameter Symbol Min Typ Max Unit Conditions Page
Input voltage between any 2 pins VIN -12 12 V 3
Operating free-air temperature TA -40 125 °C 3
Operating free-air temperature TA -40 125 °C 3
Storage temperature Tstg -65 155 °C 3
Peak pulse power PPP 84 W IEC 61000-4-5 Surge (tp 8/20µs) at 25 °C 3
Peak pulse current IPP 3.5 A IEC 61000-4-5 Surge (tp 8/20µs) at 25°C 3
Reverse stand-off voltage VRWM -12 12 V IIO < 50nA 4
ESD HBM (JEDEC) V(ESD) -2500 2500 V Human body model (HBM), per ANSI/ESDA/JEDEC JS-001, all pins 3
ESD CDM (JEDEC) V(ESD) -1000 1000 V Charged device model (CDM), per JEDEC specification JS-002, all pins 3
ESD IEC 61000-4-2 contact discharge V(ESD) -22000 22000 V IEC 61000-4-2 Contact Discharge, all pins 3
ESD IEC 61000-4-2 air discharge V(ESD) -30000 30000 V IEC 61000-4-2 Air Discharge, all pins 3
Breakdown voltage, IO to GND and GND to IO VBR 13.2 18 V IIO = ±1mA 4
Leakage current at VRWM ILEAKAGE 10 50 nA VIO = ±12V, I/O to GND 4
Surge clamping voltage, tp = 8/20µs VCLAMP 21 V IPP = ±3A, I/O to GND 4
TLP clamping voltage, tp = 100ns VCLAMP 22 V IPP = 16A (100ns TLP), I/O to GND 4
Holding voltage, I/O to GND VHOLD 16.5 V TLP, IO to GND or GND to IO 4
Line capacitance, IO to GND CLine 1.5 pF VIO = 0V, f = 1MHz 4
Junction-to-ambient thermal resistance RθJA 250.4 °C/W DBZ (SOT-23), 3 pins 3
Junction-to-case (top) thermal resistance RθJC(top) 136.6 °C/W DBZ (SOT-23), 3 pins 3
Junction-to-board thermal resistance RθJB 84 °C/W DBZ (SOT-23), 3 pins 3
Junction-to-top characterization parameter ΨJT 29.5 °C/W DBZ (SOT-23), 3 pins 3
Junction-to-board characterization parameter ΨJB 83.3 °C/W DBZ (SOT-23), 3 pins 3

CAD (KiCad official)

  • Symbol: ESD562DBZR
  • Footprint: Package_TO_SOT_SMD:SOT-23
  • 3D model: SOT-23 (KiCad packages3D, STEP)
  • 3D model files: esd562dbzr-etched.step / esd562dbzr-etched.glb carry the MPN laser-etched on the die in a toggleable Adom.LaserEtch group (Fusion-ready); esd562dbzr.step / esd562dbzr.glb are the bare package body.

Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

  • Datasheet: TI(德州仪器) datasheet (19 pp, sha256 61c059344ec6e9b1, retrieved 2026-10-22, tier: lcsc)
  • Datasheet language: Chinese. Pin names, descriptions, and specs on this page were extracted and translated to English by ds2sf; the linked PDF is the manufacturer original.
  • Extractor: parts-factory 2.0.0 / extract_pins 0.3, primary claude-haiku-5-5 (text), consensus claude-sonnet-5-5 (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
  • CAD: KiCad official libraries (CC-BY-SA 4.0).

Datasheet PDF