# ESD5611N-2

**WILLSEMI(Will Semicon)** · ESD Protection Devices · DFN1006-2L

ESD5611N-2 from WILLSEMI(Will Semicon), in a DFN1006-2L. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

## Pinout

| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | Pin1 | passive | One of the two terminals of this 1-line bi-directional TVS, which protects the line with a stand-off voltage of ±5.0V max and ESD protection of ±30kV (contact discharge, IEC61000-4-2). |
| 2 | Pin2 | passive | The other terminal of this 1-line bi-directional TVS, characterized in both Pin1-to-Pin2 and Pin2-to-Pin1 directions, with a surge rating of 25A (8/20µs, IEC61000-4-5). |

## Key specifications

| Parameter | Value |
|---|---|
| Manufacturer | WILLSEMI(Will Semicon) |
| Package | DFN1006-2L |
| Category | Circuit Protection |
| Pins | 2 |

## Electrical characteristics

Limits as printed in the datasheet (page.json `metadata.characteristics` carries them as data).

| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Peak pulse power (tp = 8/20μs) | Ppk |  |  | 275 | W | tp = 8/20μs | 2 |
| Peak pulse current (tp = 8/20μs) | IPP |  |  | 25 | A | tp = 8/20μs | 2 |
| ESD according to IEC61000-4-2 air discharge | VESD | -30 |  | 30 | kV | IEC61000-4-2 air discharge | 2 |
| ESD according to IEC61000-4-2 contact discharge | VESD | -30 |  | 30 | kV | IEC61000-4-2 contact discharge | 2 |
| Junction temperature | TJ |  |  | 125 | oC |  | 2 |
| Lead temperature | TL |  |  | 260 | oC |  | 2 |
| Storage temperature | TSTG | -55 |  | 150 | oC |  | 2 |
| Operating temperature | TOP | -40 |  | 85 | oC |  | 2 |
| Reverse stand-off voltage | VRWM | -5 |  | 5 | V |  | 3 |
| Reverse leakage current | IR |  |  | 50 | nA | VRWM = 5V | 3 |
| Reverse breakdown voltage | VBR | 5.2 |  |  | V | IBR = 1mA | 3 |
| Reverse holding voltage | VHOLD | 5.2 |  |  | V | IHOLD = 50mA | 3 |
| Clamping voltage (TLP) | VCL |  |  | 8 | V | IPP = 16A, tp = 100ns | 3 |
| Clamping voltage (ESD) | VCL |  |  | 9.5 | V | VESD = 8kV | 3 |
| Clamping voltage | VCL |  | 6 | 7.5 | V | IPP = 1A, tp = 8/20μs | 3 |
| Clamping voltage | VCL |  | 7 | 8.5 | V | IPP = 10A, tp = 8/20μs | 3 |
| Clamping voltage | VCL |  | 9 | 11 | V | IPP = 25A, tp = 8/20μs | 3 |
| Junction capacitance | CJ |  | 65 | 80 | pF | VR = 0V, f = 1MHz | 3 |
| Junction capacitance | CJ |  | 40 | 50 | pF | VR = 5V, f = 1MHz | 3 |

## CAD (KiCad official)

- Symbol: `ESD5611N-2`
- Footprint: `Diode_SMD:D_SOD-882`
- 3D model: DFN1006-2L (KiCad packages3D, STEP)
- 3D model files: `esd5611n-2-etched.step` / `esd5611n-2-etched.glb` carry the MPN laser-etched on the die in a toggleable `Adom.LaserEtch` group (Fusion-ready); `esd5611n-2.step` / `esd5611n-2.glb` are the bare package body.

## Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

- **Datasheet:** [WILLSEMI(Will Semicon) datasheet](docs/esd5611n-2-datasheet.pdf) (7 pp, sha256 `ed0c59eeb0dca661`, retrieved 2026-10-21, tier: lcsc)
- **Extractor:** parts-factory `2.0.0` / `extract_pins 0.3`, primary `claude-haiku-5-5` (text), consensus `claude-sonnet-5-5` (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
- **CAD:** KiCad official libraries (CC-BY-SA 4.0).

[Datasheet PDF](docs/esd5611n-2-datasheet.pdf)