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ESD56011N-2

Public Made by Adom

by adom

WILLSEMI(Will Semicon) ESD And Surge Protection (TVS/ESD), DFN1006-2L. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.

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ESD56011N-2

WILLSEMI(Will Semicon) · ESD And Surge Protection (TVS/ESD) · DFN1006-2L

ESD56011N-2 from WILLSEMI(Will Semicon), in a DFN1006-2L. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

Pinout

Pin Name Type Function
1 Pin1 passive Line terminal of the 1-line bi-directional TVS, which the datasheet rates for stand-off voltage ±3.3V Max. and ESD protection up to ±30kV (contact discharge) per IEC61000-4-2.
2 Pin2 passive Second line terminal of the 1-line bi-directional TVS, which the datasheet rates for surge current up to 20A (8/20μs) per IEC61000-4-5 and clamping of ±3.3V Max. stand-off operation.

Key specifications

Parameter Value
Manufacturer WILLSEMI(Will Semicon)
Package DFN1006-2L
Category Circuit Protection
Pins 2

Electrical characteristics

Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).

Parameter Symbol Min Typ Max Unit Conditions Page
Stand-off voltage VRWM -3.3 3.3 V 3
Reverse breakdown voltage VBR 3.5 V IT = 1mA 3
Reverse leakage current IR 50 nA VRWM = 3.3V 3
Clamping voltage (TLP) VCL 7 V IPP = 16A, tp = 100ns 3
Clamping voltage (ESD) VCL 7.5 V VESD = 8kV 3
Clamping voltage (surge, 1A) VCL 4.5 V IPP = 1A, tp = 8/20μs 3
Clamping voltage (surge, 20A) VCL 7.5 V IPP = 20A, tp = 8/20μs 3
Peak pulse power Ppk 160 W tp = 8/20μs 2
Peak pulse current IPP 20 A tp = 8/20μs 2
ESD according to IEC61000-4-2 air discharge VESD -30 30 kV IEC61000-4-2 air discharge 2
ESD according to IEC61000-4-2 contact discharge VESD -30 30 kV IEC61000-4-2 contact discharge 2
Junction temperature TJ 125 °C 2
Operating temperature TOP -40 85 °C 2
Lead temperature TL 260 °C 2
Storage temperature TSTG -55 150 °C 2
Dynamic resistance RDYN 0.15 Ω TLP: Z0 = 50Ω, tp = 100ns, tr = 2ns; RDYN from 4A to 16A 3
Junction capacitance CJ 32 pF VR = 0V, f = 1MHz 3

CAD (KiCad official)

  • Symbol: ESD56011N-2
  • Footprint: Diode_SMD:D_SOD-882
  • 3D model: DFN1006-2L (KiCad packages3D, STEP)
  • 3D model files: esd56011n-2-etched.step / esd56011n-2-etched.glb carry the MPN laser-etched on the die in a toggleable Adom.LaserEtch group (Fusion-ready); esd56011n-2.step / esd56011n-2.glb are the bare package body.

Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

  • Datasheet: WILLSEMI(Will Semicon) datasheet (6 pp, sha256 6c0fb91034125e3e, retrieved 2026-10-17, tier: lcsc)
  • Extractor: parts-factory 2.0.0 / extract_pins 0.3, primary claude-haiku-5-5 (text), consensus claude-sonnet-5-5 (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
  • CAD: KiCad official libraries (CC-BY-SA 4.0).

Datasheet PDF